SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS

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0.35pF 20kV Bidirectional iscrete TVS RoHS Pb GREEN escription The SP3022 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ES). These robust diodes can safely absorb repetitive ES strikes up to the maximum level specified in the IEC61000-4-2 international standard (±20kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ES protection for data lines when AC signals are present and the low loading capacitance makes it ideal for protecting high speed data lines such as HMI,USB2.0, USB3.0 and esata. Pinout 0201 Flipchip SO882 Features contact discharge, ±30kV air discharge, (IEC61000-4-2) (5/50ns) IEC61000-4-5, 3A (t p =8/20μs) R =0V (TYP) 100nA at 5.3V (MAX) 0402 footprint resistance (0.7Ω TYP) (SO882 package) Functional Block iagram Applications 1.3, esata Consoles Interfaces Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 506 1

Absolute Maximum Ratings Symbol Parameter Value Units P PK Peak Pulse Power (t P =8/20μs) 20 W I PP Peak Current (t p =8/20μs) 3.0 A T OP Operating Temperature -40 to 125 C Thermal Information Parameter Rating Units Storage Temperature Range -55 to 150 C Maximum Junction Temperature 150 C (Soldering 20-40s) 260 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T OP =25ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM 5.3 V Reverse Breakdown Voltage V BR 1 R =1mA 6.8 7.8 V I V R =5.3V <10 100 na Clamp Voltage 1 V C I PP =1A, t p 12.0 V ynamic Resistance 2 R 0.7 Ω IEC61000-4-2 (Contact) ±20 kv ES Withstand Voltage 1 V ES IEC61000-4-2 (Air) ±30 kv iode Capacitance 1 C Reverse Bias=0V 0.35 0.5 1 Parameter is guaranteed by design and/or device characterization. 2 Pulse Waveform Transmission Line Pulsing(TLP) Plot Percent of I PP 110% 100% 90% 80% 70% 60% 50% 40% 30% 20% 10% 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time (μs) TLP Current (A) 22 20 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 TLP Voltage (V) 507 2

Temperature Clamping Voltage vs I PP Capacitance vs. Reverse Bias 16.0 0.5 Clamp Voltage (VC) 14.0 12.0 10.0 8.0 6.0 4.0 2.0 Capacitance (pf) 0.4 0.3 0.2 0.1 0.0 1.0 1.5 2.0 2.5 3.0 Peak Pulse Current-I PP (A) 0.0 0 0.3 0.6 0.9 1.2 1.5 1.8 2..4 2.7 3 3.3 Bias Voltage (V) Soldering Parameters Reflow Condition - Temperature Min (T s(min) ) 150 C Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) 60 180 secs ) to peak 3 C/second max T S(max) to T - Ramp-up Rate 3 C/second max Reflow - Temperature (T 217 C - Temperature (t ) 60 150 seconds Peak Temperature (T P ) 260 +0/-5 C Time within 5 C of actual peak Temperature (t p ) 20 40 seconds Ramp-down Rate 6 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. o not exceed 260 C Ordering Information T P T L T S(max) T S(min) 25 t S Preheat Ramp-up time to peak temperature Product Characteristics of 0201 Flipchip Lead Plating Lead Material Lead Coplanarity Substrate material Body Material Sn Copper 6μm(max) t P t L Ramp-down Time Critical Zone TL to TP Package Marking - 10000 SO882-10000 Product Characteristics of SO882 Lead Plating Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substrate material Body Material Molded Epoxy Flammability 1. All dimensions are in millimeters 2. imensions include solder plating. 3. imensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VI 11-13. 3 508

Part Numbering System Part Marking System SP 3022 01 x T G TVS iode Arrays (SPA iodes) G= Green T= Tape & Reel Series Number of Channels Package W: 0201 Flipchip E: SO882 SP3022-01WTG SP3022-01ETG Package imensions 0201 Flipchip B C A E G F 0.30 0.28 0.75 0.19 *Sizes in mm Recommended Solder Pad Footprint Inches Min Typ Max Min Typ Max A 0.620 0.645 0.0234 0.0244 0.0254 B 0.320 0.345 0.0116 0.0126 0.0136 C 0.245 0.275 0.305 0.0108 0.0120 0.145 0.150 0.155 0.0057 0.0061 E 0.245 0.250 0.255 0.0100 F 0.245 0.250 0.255 0.0100 G 0.005 0.010 0.015 0.0002 0.0004 0.0006 Package imensions SO882 Package SO882 Symbol JEEC MO-236 Millimeters Inches Min Typ Max Min Typ Max A 1.00 1.05 0.037 0.041 B 0.55 0.60 0.65 0.022 0.024 0.026 C 0.50 0.55 0.60 0.020 0.022 0.024 0.45 0.018 E 0.20 0.25 0.30 0.008 0.010 0.012 F 0.45 0.50 0.55 0.018 0.020 0.022 Recommended Soldering Pad Layout 4 509

Embossed Carrier Tape & Reel Specification 0201 Flipchip P1 P2 W T P0 1 E F A0 0.41+/-0.03 B0 0.70+/-0.03 ø 1.50 + 0.10 1 ø 0.20 +/- 0.05 E 1.75+/-0.10 F 3.50+/-0.05 K0 0.38+/-0.03 P0 2.00+/-0.05 P.00+/-0.05 P2 4.00+/-0.10 W 8.00 + 0.30-0.10 T 0.23+/-0.02 Embossed Carrier Tape & Reel Specification SO882 A0 0.70+/-0.045 B0 1.10+/-0.045 K0 0.65+/-0.045 F 3.50+/-0.05 P.00+/-0.10 W 8.00 + 0.30-0.10 1. All dimensions are in millimeters 5 510