PNP Silicon AF Transistor For general AF applications High collector current High current gain Low collectoremitter saturation voltage Complementary type: BC87.../W, BC88.../W (NPN) Pbfree (RoHS compliant) package ) Qualified according AEC Q Type Marking Pin Configuration Package BC876 BC876W BC87 BC87W BC874 BC874W BC88 BC88W BC884 As As Bs Bs Cs Cs Fs Fs Gs SOT SOT SOT SOT SOT SOT SOT SOT SOT BC884W Gs SOT Pbcontaining package may be available upon special request 768
Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage BC87... BC88... Collectorbase voltage BC87... BC88... V CEO V CBO 4 V Emitterbase voltage V EBO Collector current I C ma Peak collector current I CM Base current I B Peak base current I BM Total power dissipation T S 79 C BC87, BC88 T S C BC87W, BC88W P tot mw Junction temperature T j C Storage temperature T stg 6... Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs K/W BC87, BC88 BC87W, BC88W 8 For calculation of R thja please refer to Application Note Thermal Resistance 768
Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V I C = ma, I B =, BC87... I C = ma, I B =, BC88... 4 Collectorbase breakdown voltage V (BR)CBO I C = µa, I E =, BC87... I C = µa, I E =, BC88... Emitterbase breakdown voltage I E = µa, I C = Collectorbase cutoff current V CB = V, I E = V CB = V, I E =, T A = C Emitterbase cutoff current V EB = 4 V, I C = DC current gain ) I C = ma, V CE = V, h FE grp. 6 I C = ma, V CE = V, h FE grp. I C = ma, V CE = V, h FE grp. 4 I C = ma, V CE = V Collectoremitter saturation voltage ) I C = ma, I B = ma Base emitter saturation voltage ) I C = ma, I B = ma V (BR)EBO I CBO µa. I EBO na h FE 6 4 6 4 6 V CEsat.7 V V BEsat. Pulse test: t < µs; D < % 768
Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency f T MHz I C = ma, V CE = V, f = MHz Collectorbase capacitance C cb 8 pf V CB = V, f = MHz Emitterbase capacitance V EB =. V, f = MHz C eb 6 4 768
DC current gain h FE = ƒ(i C ) V CE = V h FE grp. 6 DC current gain h FE = ƒ(i C ) V CE = V h FE grp. hfe hfe C 8 C 6 C C 4 C C 8 C 6 C C 4 C 4 A I C DC current gain h FE = ƒ(i C ) V CE = V h FE grp. 4 4 A I C Collectoremitter saturation voltage I C = ƒ(v CEsat ), h FE = EHP hfe Ι C ma C C C C 8 C 6 C C 4 C 4 A I C..4.6 V.8 V CEsat 768
Baseemitter saturation voltage I C = ƒ(v BEsat ), h FE = Collector cutoff current I CBO = ƒ(t A ) V CBO = V EHP4 EHP Ι C ma C C C na Ι CBO 4 max typ... V 4. C V BEsat T A Transition frequency f T = ƒ(i C ) V CE = parameter in V, f = GHz Collectorbase capacitance C cb = ƒ(v CB ) Emitterbase capacitance C eb = ƒ(v EB ) f T MHz EHP 6 pf CCB/CEB 4 4 CEB ma Ι C CCB 4 6 8 4 6 V V CB /V EB 6 768
Total power dissipation P tot = ƒ(t S ) BC87, BC88 Total power dissipation P tot = ƒ(t S ) BC87W, BC88W 6 mw mw 7 Ptot 4 Ptot 7 8 9 7 6 4 6 7 9 C T S 4 6 7 9 C T S Permissible Pulse Load R thjs = ƒ(t p ) BC87, BC88 Permissible Pulse Load P totmax /P totdc = ƒ(t p ) BC87, BC88 4 RthJS D =,,,,,,, Ptotmax/PtotDC D =....... 6 4 s t p 6 4 s t p 7 768
Permissible Puls Load R thjs = ƒ (t p ) BC87W, BC88W Permissible Pulse Load P totmax /P totdc = ƒ(t p ) BC87W, BC88W RtthJS K/W....... D = Ptotmax/PtotDC D =....... 6 4 s t p 6 4 s t p 8 768
Package SOT Package Outline +. ).4..9 ±..9 B C.9.4 ±.. MIN. MAX. ±.. MAX....8 MAX..8.... ±. A. M BC. M A Foot Print ) Lead width can be.6 max. in dambar area.8.8..9..9 Marking Layout (Example) EH s Manufacturer, June Date code (YM) Pin BCW66 Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.9. 8..6 Pin.. 9 768
Package SOT Package Outline ±.. +.. x. M. MAX...9 ±. A.6.6.±.. MIN.. +... ±.. M A Foot Print.6 Marking Layout (Example) Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.. 8.8.6.6.6 Manufacturer, June Date code (YM) Pin BCR8W Type code Pin.. 768
Edition 6 Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 7. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 768