Silicon Low Leakage Diode Array Lowleakage applications Medium speed switching times Pbfree (RoHS compliant) package 1) Qualified according AEC Q11 BAV17!,, Type Package Configuration Marking BAV17 SOT23 common cathode JXs Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R 8 V Peak reverse voltage V RM 85 Forward current I F 2 ma Nonrepetitive peak surge forward current I FSM A t = 1 µs t = 1 s 4.5.5 Total power dissipation T S 35 C P tot 25 mw Junction temperature T j 15 C Storage temperature T stg 65... 15 Thermal Resistance Parameter Symbol Value Unit Junction soldering point 2) BAV17 R thjs 46 K/W 1 Pbcontaining package may be available upon special request 2 For calculation of R thja please refer to Application Note Thermal Resistance 1
Electrical Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I (BR) = 1 µa V (BR) 85 V Reverse current I R na V R = 75 V 5 V R = 75 V, T A = 15 C 8 Forward voltage V F mv I F = 1 ma 9 I F = 1 ma 1 I F = 5 ma 11 I F = 15 ma 125 AC Characteristics Diode capacitance V R = V, f = 1 MHz Reverse recovery time I F = 1 ma, I R = 1 ma, measured at I R = 1mA, R L = 1 Ω C T 2 pf t rr.6 1.5 µs Test circuit for reverse recovery time Ι F D.U.T. Oscillograph Pulse generator: t p = 1µs, D =.5, t r =.6ns, R i = 5Ω Oscillograph: R = 5Ω, t r =.35ns, C 1pF EHN19 2
Reverse current I R = ƒ (T A ) V R = 7V Forward Voltage V F = ƒ (T A ) I F = Parameter Ι R 1 2 na BAV 17 EHB8 1.5 V BAV 17 EHB83 1 1 max V F 1 1 1 typ 1..5 Ι F = 15 ma 5 ma 1 ma 1 ma.1 ma 1 2 1 3 5 1 C 15 T A 5 1 C 15 T A Forward current I F = ƒ (V F ) T A = 25 C Forward current I F = ƒ (T S ) BAV17 15 BAV 17 EHB81 25 Ι F ma ma 2 1 IF 175 15 typ max 125 5 1 75 5.5 1. V 1.5 V F 25 15 3 45 6 75 9 15 12 C 15 T S 3
Permissible Puls Load R thjs = ƒ (t p ) Permissible Pulse Load I Fmax / I FDC = ƒ (t p ) 3 1 2 1 RthJS 2 1 1 1 1 D =,5,2,1,5,2,1,5 IFmax/IFDC 1 1 D =.5.1.2.5.1.2.5 1 1 1 7 1 6 1 5 1 4 1 3 1 2 s 1 T P 1 1 7 1 6 1 5 1 4 1 3 1 2 s 1 T P 4
Package SOT23 Package Outline +.1 1).4.5 2.9 ±.1 1.9 3 1 2 B C.95 2.4 ±.15.15 MIN. 1 MAX. 1±.1.1 MAX....8 1 MAX..8...15 1.3 ±.1 A.25 M BC.2 M A Foot Print 1) Lead width can be.6 max. in dambar area.8.8 1.2.9 1.3.9 Marking Layout (Example) EH s Manufacturer 25, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø18 mm = 3. Pieces/Reel Reel ø33 mm = 1. Pieces/Reel 4.9.2 8 2.13 2.65 Pin 1 3.15 1.15 5
Edition 2621 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 27. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6