OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS V R DS(on),max V GS = V.6 W V GS =4.5 V.8 I D. A PG-SOT3 Halogen-free according to IEC649-- Type Package Tape and Reel Information Marking Halogen-Free Packing SOT3 H637: pcs/ reel Yes Non dry Maximum ratings, at T j =5 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T A =5 C. A T A =7 C.9 Pulsed drain current I D,pulse T A =5 C 4.6 Avalanche energy, single pulse E AS I D =. A, R GS =5 W 5. mj Reverse diode dv /dt dv /dt I D =. A, V DS =8 V, di /dt = A/µs, T j,max =5 C 6 kv/µs Gate source voltage V GS ± V Power dissipation P tot T A =5 C.8 W Operating and storage temperature T j, T stg -55... 5 C ESD Class JESD-A4 -HBM (<5V) Soldering Temperature 6 C IEC climatic category; DIN IEC 68-55/5/56 Rev. page 3-4-4
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance R thjs - - 5 K/W R thja minimal footprint - - junction - ambient 6 cm cooling area ) - - 7 Electrical characteristics, at T j =5 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =5 µa - - V Gate threshold voltage V GS(th) V DS =Vgs V, I D = µa.8.4.8 Drain-source leakage current I DSS V DS = V, V GS = V, T j =5 C V DS = V, V GS = V, T j =5 C - -. ma - - Gate-source leakage current I GSS V GS = V, V DS = V - - na Drain-source on-state resistance R DS(on) V GS =4.5 V, I D =.95 A - 37 8 mw V GS = V, I D =. A - 39 6 Transconductance g fs V DS > I D R DS(on)max, I D =.9 A.66 - S ) Device on 4mm x 4mm x.5mm epoxy PCB FR4 with 6cm² (one layer, 7μm thick) copper area for drain connection. PCB is vertical in still air. Rev. page 3-4-4
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 4.8 5.7 pf Output capacitance C oss V GS = V, V DS =5 V, f = MHz - 9.7 6.3 Reverse transfer capacitance C rss - 9.8 4.7 Turn-on delay time t d(on) - 3.5 5.3 ns Rise time t r V DD =5 V, V GS = V, - 3.8 5.7 Turn-off delay time t d(off) I D =. A, R G,ext =6 W - 8.4 7.6 Fall time t f - 5. 7.8 Gate Charge Characteristics Gate to source charge Q gs -.7.4 nc Gate to drain charge Q gd V DD =5 V, I D =. A, -.45. Gate charge total Q g V GS = to V - 4.5 6.7 Gate plateau voltage V plateau -.4 - V Reverse Diode Diode continous forward current I S T A =5 C - -. A Diode pulse current I S,pulse - - 4.6 Diode forward voltage V SD V GS = V, I F =. A, T j =5 C -.85. V Reverse recovery time t rr V R =5 V, I F =. A, - 7 4.5 ns Reverse recovery charge Q rr di F /dt = A/µs - 3 45 nc Rev. page 3 3-4-4
Z thja [K/W] P tot [W] Power dissipation Drain current P tot =f(t A ) I D =f(t A ); V GS V.5.8.6.4..75.8.5.6.4.5. 4 8 6 T A [ C] 4 8 6 T A [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T A =5 C; D = Z thja =f(t p ) parameter: t p parameter: D =t p /T µs µs ms µs ms.5... DC.5... single pulse. V DS [V] -4-3 - - t p [s] Rev. page 4 3-4-4
g fs [S] R DS(on) [mw] 5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =5 C R DS(on) =f(i D ); T j =5 C parameter: V GS parameter: V GS 4.8 4.4 V 4 V 3.5 V 3.3 V.8 V 3 V 4 3.6 3. 3 V 75.8 3.3 V.4.8 V 5 3.5 V 4 V 4.5 V.6 V. 5.8.4 4 6 8 V DS [V].8.6.4 3. 4 4.8 7 Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS > I D R DS(on)max g fs =f(i D ); T j =5 C 4.8 6 4 5 3. 5 C 5 C 4.4 3.6.8 3 4 V GS [V]..8.6.4 3. 4. 4.8 Rev. page 5 3-4-4
C [pf] I F [A] R DS(on) [mw] V GS(th) [V] 9 Drain-source on-state resistance Typ. gate threshold voltage R DS(on) =f(t j ); I D =. A; V GS = V V GS(th) =f(t j ); V DS =V GS ; I D = µa parameter: I D 4.4 8.6 max typ max. 6 4 typ.8 min.4-6 -4-4 6 8 4 6 T j [ C] -6-4 9 4 T j [ C] Typ. capacitances Forward characteristics of reverse diode C =f(v DS ); V GS = V; f = MHz; T j =5 C I F =f(v SD ) parameter: T j 3 5 C Ciss 5 C 5 C, 98% Coss - Crss 5 C, 98% 3 4 5 6 7 8 9 V DS [V] -..4.6.8..4.6 V SD [V] Rev. page 6 3-4-4
V BR(DSS) [V] I AV [A] V GS [V] 3 Avalanche characteristics 4 Typ. gate charge I AS =f(t AV ); R GS =5 W V GS =f(q gate ); I D =. A pulsed parameter: T j(start) parameter: V DD 9 V 5 V 8 V 8 7 5 C C 5 C 6 5-4 3 3 4 5 t AV [µs] Q gate [nc] 3 5 Drain-source breakdown voltage 6 Gate charge waveforms V BR(DSS) =f(t j ); I D =5 µa 6 V GS Q g 8 4 96 V gs(th) 9 88 Q g(th) Q sw Q gate 84 8-6 - 6 4 8 T j [ C] Q gs Q gd Rev. page 7 3-4-4
Package Outline: SOT3 Footprint: Packaging: Dimensions in mm Rev. page 8 3-4-4
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