Date:- 4 Feb 22 Data Sheet Issue:- 3 Absolute Maximum Ratings Phase Control Thyristor Type VOLTAGE RATINGS Symbol Parameter MAXIMUM UNITS V DRM Repetitive peak off-state voltage, (note 1) 16 V V DSM Non-repetitive peak off-state voltage, (note 1) 16 V V RRM Repetitive peak reverse voltage, (note 1) 16 V V RSM Non-repetitive peak reverse voltage, (note 1) 17 V OTHER RATINGS Symbol Parameter MAXIMUM UNITS I T(AV) Mean on-state current. T sink =55 C, (note 2) 734 A I T(AV) Mean on-state current. T sink =85 C, (note 2) 494 A I T(AV) Mean on-state current. T sink =85 C, (note 3) 29 A I T(RMS) Nominal RMS on-state current. T sink =25 C, (note 2) 1465 A I T(d.c.) D.C. on-state current. T sink =25 C, (note 4) 1231 A I TSM Peak non-repetitive surge t p =1ms, V rm =V RRM, (note 5) 77 A I TSM2 Peak non-repetitive surge t p =1ms, V rm 1V, (note 5) 924 A I 2 t I 2 t capacity for fusing t p =1ms, V rm =V RRM, (note 5) 296 1 3 A 2 s I 2 t I 2 t capacity for fusing t p =1ms, V rm 1V, (note 5) 427 1 3 A 2 s di T /dt Maximum rate of rise of on-state current (repetitive), (Note 6) 5 A/µs Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1 A/µs V RGM Peak reverse gate voltage 5 V P G(AV) Mean forward gate power 2 W P GM Peak forward gate power 3 W V GD Non-trigger gate voltage, (Note 7).25 V T HS Operating temperature range -4 to +125 C T stg Storage temperature range -4 to +15 C Notes: - 1) De-rating factor of.13% per C is applicable for T j below 25 C. 2) Double side cooled, single phase; 5Hz, 18 half-sinewave. 3) Single side cooled, single phase; 5Hz, 18 half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125 C T j initial. 6) V D =67% V DRM, I TM =5A, I FG =1A, t r.5µs, T case =125 C. 7) Rated V DRM. Data Sheet Page 1 April, 22
Characteristics Symbol PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS V TM Maximum peak on-state voltage - - 1.78 I TM =155A V V Threshold voltage - - 1.3 V r S Slope resistance - -.483 mω dv/dt Critical rate of rise of off-state voltage 1 - - V D =8% V DRM, linear ramp, gate o/c V/µs I DRM Peak off-state current - - 4 Rated V DRM ma I RRM Peak reverse current - - 4 Rated V RRM ma V GT Gate trigger voltage - - 3. V T j =25 C, V D =1V, I T =2A I GT Gate trigger current - - 15 ma I H Holding current - - 5 T j =25 C ma t gd Gate controlled turn-on delay time -.5 1. t gt Turn-on time - 1. 2. V D =8%V DRM, I TM =1A, di/dt=1a/µs, I FG =2A, t r =.5µs, T j =25 C Q rr Recovered Charge - 75 - µc Q ra Recovered Charge, 5% chord - 6 69 µc I TM =1A, t p =1µs, di/dt=1a/µs, V r =5V I rm Reverse recovery current - 7 - A t rr Reverse recovery time, 5% chord - 12 - µs t q R th(j-hs) Turn-off time Thermal resistance, junction to heatsink - 16 - - 25 - I TM =1A, t p =1µs, di/dt=1a/µs, V r =5V, V dr =8%V DRM, dv dr /dt=2v/µs I TM =1A, t p =1µs, di/dt=1a/µs, V r =5V, V dr =8%V DRM, dv dr /dt=2v/µs - -.5 Double side cooled K/W - -.1 Single side cooled K/W F Mounting force 5.3-1 kn W t Weight - 9 - g µs µs Notes: - 1) Unless otherwise indicated T j=125 C. Data Sheet Page 2 April, 22
Notes on Ratings and Characteristics 1. Voltage Grade Table V Voltage Grade DRM V DSM V RRM V RSM V D V R V V DC V 16 16 17 14 2. Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production. 3. De-rating Factor A blocking voltage de-rating factor of.13%/ C is applicable to this device for T j below 25 C. 4. Repetitive dv/dt Standard dv/dt is 1V/µs. 5. Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1A/µs at any time during turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 5A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 6. Gate Drive The recommended pulse gate drive is 3V, 3Ω with a short-circuit current rise time of not more than.5µs. This gate drive must be applied when using the full di/dt capability of the device. The pulse duration may need to be configured according to the application but should be no shorter than 2µs, otherwise an increase in pulse current may be needed to supply the necessary charge to trigger. 7. Computer Modelling Parameters I AV 7.1 Device Dissipation Calculations V + = V 2 + 4 ff r W 2 ff r Where V =1.3V, r s =.483mΩ s s AV and: W AV T = R T = T th j max T Hs R th = Supplementary thermal impedance, see table below. ff = Form factor, see table below. Supplementary Thermal Impedance Conduction Angle 3 6 9 12 18 27 d.c. Square wave Double Side Cooled.71.69.65.61.57.53.5 Square wave Single Side Cooled.12.119.115.111.17.13.1 Sine wave Double Side Cooled.53.52.516.513.55 Sine wave Single Side Cooled.13.12.117.113.15 Form Factors Conduction Angle 3 6 9 12 18 27 d.c. Square wave 3.46 2.45 2 1.73 1.41 1.15 1 Sine wave 3.98 2.78 2.22 1.88 1.57 Data Sheet Page 3 April, 22
7.2 Calculating V T using ABCD Coefficients The on-state characteristic I T vs. V T, on page 5 is represented in two ways; (i) the well established V and r s tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V T in terms of I T given below: V = A + B ln ( IT ) + C IT + D IT T The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V T agree with the true device characteristic over a current range, which is limited to that plotted. 25 C Coefficients 125 C Coefficients A.68472 A.255645 B.113618 B.1512629 C 4.1517 1-4 C 5.81796 1-4 D -8.37156 1-3 D -9.373878 1-3 7.3 D.C. Thermal Impedance Calculation p = n t = p= 1 Where p = 1 to n, n is the number of terms in the series and: t = Duration of heating pulse in seconds. r t = Thermal resistance at time t. r p = Amplitude of p th term. τ p = Time Constant of r th term. r r p 1 e t τ p D.C. Double Side Cooled Term 1 2 3 4 r p.12552.169235 8.812673 1-3 3.659765 1-3 τ p.3391689.945764.12195269 2.169197 1-3 D.C. Single Side Cooled Term 1 2 3 4 5 r p.6157697 8.431182 1-3.131315.161386 5.18188 1-3 τ p 2.136132 1.212898.151248.4244 2.889595 1-3 8. Reverse recovery ratings (i) Q ra is based on 5% I rm chord as shown in Fig. 1. (ii) Q rr is based on a 15µs integration time. 15µ s (iii) i.e. Q rr = i rr. dt K Factor = t1 t2 Fig. 1 Data Sheet Page 4 April, 22
Curves Figure 1 - On-state characteristics of Limit device 1 Figure 2 - Transient Thermal Impedance 1 Instantaneous On-state current - I TM (A) 1 T j = 25 C T j = 125 C Thermal impedance (K/W).1.1 SSC.1K/W DSC.5K/W 1 1 2 3 4 Instantaneous On-state voltage - V TM (V).1.1.1.1 1 1 1 Time (s) Figure 3 - Gate Characteristics Trigger Limits Figure 4 - Gate Characteristics - Power Curves 7 18 T j =25 C 16 T j =25 C 6 14 Max V G dc Gate Trigger Voltage - V GT (V) 5 4 3 I GT, V GT Max V G dc Gate Trigger Voltage - V GT (V) 12 1 8 6 P G Max 3W dc 2 4 1 I GD, V GD 125 C 25 C -1 C -4 C 2 P G 2W dc Min V G dc Min V G dc.1.2.3.4 Gate Trigger Current - I GT (A) 2 4 6 8 1 Gate Trigger Current - I GT (A) Data Sheet Page 5 April, 22
Figure 5 Recovered Charge, Q rr 1 SKT552/16 T j =125 C Figure 6 Recovered charge, Q ra (5% chord) 1 2A 15A 1A 5A Recovered charge - Q rr (µc) 1 2A 15A 1A 5A Recovered charge - Q ra, 5% chord (µc) T j =125 C 1 1 1 1 1 di/dt (A/µs) SKT552/16 1 1 1 1 1 di/dt (A/µs) Figure 7 Reverse recovery current, I rm Figure 8 Reverse recovery time, t rr (5% chord) 1 SKT552/16 T j =125 C 1 SKT552/16 T j =125 C 2A 15A 1A 5A Reverse recovery current - I rm (A) 1 Reverse recovery time (5% chord) - t rr (µs) 1 2A 15A 1A 5A 1 1 1 1 1 di/dt (A/µs) 1 1 1 1 1 di/dt (A/µs) Data Sheet Page 6 April, 22
Figure 9 On-state current vs. Power dissipation Double Side Cooled (Sine wave) Figure 1 On-state current vs. Heatsink temperature - Double Side Cooled (Sine wave) 25 14 12 2 3 6 9 12 6 18 Maximum forward dissipation (W) 15 1 Maximum permissable heatsink temperature ( C) 1 8 6 4 5 2 3 6 9 12 18 2 4 6 8 1 Mean forward current (A) (Whole cycle averaged) 2 4 6 8 1 Mean forward current (A) (Whole cycle averaged) Figure 11 On-state current vs. Power dissipation Double Side Cooled (Square wave) Figure 12 On-state current vs. Heatsink temperature - Double Side Cooled (Square wave) 25 14 12 Maximum forward dissipation (W) 2 15 1 3 6 12 9 18 27 d.c. Maximum permissible heatsink temperature ( C) 1 8 6 4 5 2 3 6 9 12 18 27 d.c. 2 4 6 8 1 12 14 Mean Forward Current (Amps) (Whole Cycle Averaged) 2 4 6 8 1 12 14 Mean Forward Current (Amps) (Whole Cycle Averaged) Data Sheet Page 7 April, 22
Figure 13 On-state current vs. Power dissipation Single Side Cooled (Sine wave) Figure 14 On-state current vs. Heatsink temperature - Single Side Cooled (Sine wave) 12 14 1 3 6 9 12 18 12 Maximum forward dissipation (W) 8 6 4 Maximum permissable heatsink temperature ( C) 1 8 6 4 2 2 3 6 9 12 18 1 2 3 4 5 6 7 Mean forward current (A) (Whole cycle averaged) 1 2 3 4 5 6 7 Mean forward current (A) (Whole cycle averaged) Figure 15 On-state current vs. Power dissipation Single Side Cooled (Square wave) Figure 16 On-state current vs. Heatsink temperature - Single Side Cooled (Square wave) 12 14 Maximum forward dissipation (W) 1 8 6 4 d.c. 27 18 9 12 3 6 Maximum permissible heatsink temperature ( C) 12 1 8 6 4 2 2 3 6 9 12 18 27 d.c. 2 4 6 8 Mean Forward Current (Amps) (Whole Cycle Averaged) 2 4 6 8 Mean Forward Current (Amps) (Whole Cycle Averaged) Data Sheet Page 8 April, 22
Figure 17 Maximum surge and I 2 t Ratings 1 1.E+7 T j (initial) = 125 C Total peak half sine surge current (A) 1 I 2 t: V RRM 1V I 2 t: 1% V RRM I TSM : V RRM 1V 1.E+6 Maximum I 2 t (A 2 s) I TSM : 1% V RRM 1 1 3 5 1 1 5 1 5 1 Duration of surge (ms) Duration of surge (cycles @ 5Hz) 1.E+5 Data Sheet Page 9 April, 22
Outline Drawing & Ordering Information ORDERING INFORMATION (Please quote 1 digit code as below) SK T 552/ Fixed Type Code Fixed Outline Code Typical order code: SKT552/16 16V V DRM, V RRM, 1V/µs dv/dt. Fixed Type Code Voltage Code 16 Data Sheet Page 1 April, 22