8 FRED Pt VS-8ETU04SPbF N/C ase cathode 1 3 D PK PRODUCT SUMMRY t rr I F(V) V R node VS-8ETU04-1PbF 1 3 N/C node TO-6 60 ns 8 400 V FETURES Ultrafast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Meets MSL level 1, per J-STD-00, LF maximum peak of 60 C Halogen-free according to IEC 6149--1 definition Compliant to RoHS directive 00/95/EC EC-Q1 qualified DESCRIPTION/PPLICTIONS Vishay HPP s FRED Pt series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, dc-to-dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS MX. UNITS Repetitive peak reverse voltage V RRM 400 V verage rectified forward current I F(V) T C = 155 C 8 Non-repetitive peak surge current I FSM T C = 5 C 0 Repetitive peak forward current I FRM 16 Operating junction and storage temperatures, T Stg - 65 to 175 C ELECTRICL SPECIFICTIONS ( = 5 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS reakdown voltage, blocking voltage V R, V R I R = 0 μ 400 - - I F = 8-1.19 1.3 Forward voltage V F I F = 8, = 150 C - 0.94 1.0 V R = V R rated - 0. Reverse leakage current I R = 150 C, V R = V R rated - 0 500 μ Junction capacitance C T V R = 400 V - 14 - pf Series inductance L S Measured lead to lead 5 mm from package body - 8.0 - nh V Document Number: 94031 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 11-Mar- 1
8 FRED Pt DYNMIC RECOVERY CHRCTERISTICS ( = 5 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS Reverse recovery time t rr = 5 C - 43 - ns I F = 1.0, di F /dt = 50 /μs, V R = 30 V - 35 60 = 15 C - 67 - Peak recovery current I RRM T I F = 8 J = 5 C -.8 - di F /dt = 00 /μs = 15 C V R = 00 V - 6.3 - = 5 C - 60 - Reverse recovery charge Q rr = 15 C - - nc THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range, T Stg - 65-175 C Thermal resistance, junction to case R thjc - 1.8.0 Thermal resistance, junction to ambient R thj Typical socket mount - - 50 Mounting surface, flat, smooth Thermal resistance, case to heatsink R thcs - 0.5 - and greased Weight Mounting torque Marking device Case style D PK Case style TO-6 C/W -.0 - g - 0.07 - oz. 6.0 (5.0) - 1 () 8ETU04S 8ETU04-1 kgf cm (lbf in) www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94031 Revision: 11-Mar-
8 FRED Pt 0 00 I F - Instantaneous Forward Current () 1 = 175 C = 150 C = 5 C I R - Reverse Current (µ) 0 1 0.1 0.01 0.001 = 175 C = 150 C = 15 C = 0 C = 5 C 0.1 0 0.5 1.0 1.5.0.5 V F - Forward Voltage Drop (V) 0.0001 0 0 00 V R - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. - Typical Values of Reverse Current vs. Reverse Voltage 300 400 00 C T - Junction Capacitance (pf) 0 = 5 C 0 0 00 300 400 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 1 D = 0.50 t 1 D = 0.0 0.1 D = 0. t D = 0.05 Notes: Single pulse D = 0.0 1. Duty factor D = t 1 /t (thermal resistance) D = 0.01.. Peak = P DM x Z thjc + T C. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM Document Number: 94031 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 11-Mar- 3
8 FRED Pt llowable Case Temperature ( C) 180 170 160 150 140 See note (1) 130 0 4 6 DC Square wave (D = 0.50) Rated V R applied 8 1 t rr (ns) 90 80 70 60 50 40 30 I F = 16 I F = 8 V R = 00 V = 15 C = 5 C 0 0 00 I F(V) - verage Forward Current () di F /dt (/µs) Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 7 - Typical Reverse Recovery Time vs. di F /dt verage Power Loss (W) 14 1 8 6 4 DC RMS limit D = 0.01 D = 0.0 D = 0.05 D = 0. D = 0.0 D = 0.50 Q rr (nc) 500 450 400 350 300 50 00 150 0 50 V R = 00 V = 15 C = 5 C I F = 16 I F = 8 0 0 4 6 8 1 0 0 00 I F(V) - verage Forward Current () di F /dt (/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. di F /dt Note (1) Formula used: T C = - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = Rated V R www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94031 4 Revision: 11-Mar-
8 FRED Pt V R = 00 V L = 70 μh 0.01 Ω D.U.T. di F /dt adjust G D IRFP50 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr 0 I F t a tb () I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM (1) di F /dt (1) di F /dt - rate of change of current through zero crossing () I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Document Number: 94031 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 11-Mar- 5
ORDERING INFORMTION TLE 8 FRED Pt Device code VS- 8 E T U 04 S TRL PbF 1 3 4 5 6 7 8 9 1 - HPP product suffix - Current rating (8 ) 3 - E = Single diode 4 - T = TO-0, D PK 5 - U = Ultrafast recovery 6 - Voltage rating (04 = 400 V) 7 - S = D PK -1 = TO-6 8 - None = Tube (50 pieces) TRL = Tape and reel (left oriented, for D PK package) TRR = Tape and reel (right oriented, for D PK package) 9 - PbF = Lead (Pb)-free Dimensions Part marking information Packaging information LINKS TO RELTED DOCUMENTS www.vishay.com/doc?95014 www.vishay.com/doc?95008 www.vishay.com/doc?9503 www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94031 6 Revision: 11-Mar-
Outline Dimensions D PK, TO-6 DIMENSIONS FOR D PK in millimeters and inches Conforms to JEDEC outline D PK (SMD-0) (3) L1 ()(3) E 4 c (E) (D1) (3) Pad layout 11.00 MIN. (0.43) 9.65 MIN. (0.38) D L x e 1 3 H () x b x b C Detail 0.0 M M c ± 0.004 M E1 View - H (3) 17.90 (0.70) 15.00 (0.65).3 MIN. (0.08) Plating.64 (0.3).41 (0.096) (4) b1, b3 3.81 MIN. (0.15) ase Metal Gauge plane Lead assignments Diodes 1. - node (two die)/open (one die)., 4. - Cathode 3. - node Lead tip 0 to 8 L3 L L4 Detail Rotated 90 CW Scale: 8:1 1 Seating plane (c) (b, b) Section - and C - C Scale: None c1 (4) SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.70 0.315 3 1 0.00 0.54 0.000 0.0 E 9.65.67 0.380 0.40, 3 b 0.51 0.99 0.00 0.039 E1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.00 0.035 4 e.54 SC 0.0 SC b 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.65 b3 1.14 1.73 0.045 0.068 4 L 1.78.79 0.070 0.1 c 0.38 0.74 0.015 0.09 L1-1.65-0.066 3 c1 0.38 0.58 0.015 0.03 4 L 1.7 1.78 0.050 0.070 c 1.14 1.65 0.045 0.065 L3 0.5 SC 0.0 SC D 8.51 9.65 0.335 0.380 L4 4.78 5.8 0.188 0.08 Notes (1) Dimensioning and tolerancing per SME Y14.5 M-1994 () Dimension D and E do not include mold flash. Mold flash shall not exceed 0.17 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-63 Document Number: 95014 For technical questions concerning discrete products, contact: diodes-tech@vishay.com www.vishay.com Revision: 31-Mar-09 For technical questions concerning module products, contact: ind-modules@vishay.com 1
Outline Dimensions D PK, TO-6 DIMENSIONS FOR TO-6 in millimeters and inches Modified JEDEC outline TO-6 (Datum ) () (3) E (3) L1 c E D Seating plane D1(3) L 1 C 3 C L () x e 0.0 M M Lead tip 3 x b 3 x b c Lead assignments 1 Diodes 1. - node (two die)/open (one die)., 4. - Cathode 3. - node Plating c E1 Section - (4) ase b1, b3 metal (b, b) (3) c1 (4) Section - and C - C Scale: None SYMOL MILLIMETERS INCHES MIN. MX. MIN. MX. NOTES 4.06 4.83 0.160 0.190 1.03 3.0 0.080 0.119 b 0.51 0.99 0.00 0.039 b1 0.51 0.89 0.00 0.035 4 b 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.09 c1 0.38 0.58 0.015 0.03 4 c 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.70 0.315 3 E 9.65.67 0.380 0.40, 3 E1 7.90 8.80 0.311 0.346 3 e.54 SC 0.0 SC L 13.46 14. 0.530 0.555 L1-1.65-0.065 3 L 3.56 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per SME Y14.5M-1994 () Dimension D and E do not include mold flash. Mold flash shall not exceed 0.17 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC TO-6 except 1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline www.vishay.com For technical questions concerning discrete products, contact: diodes-tech@vishay.com Document Number: 95014 For technical questions concerning module products, contact: ind-modules@vishay.com Revision: 31-Mar-09
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