! Energy Optimization. ! Design Space Exploration. " Example. ! P tot P static + P dyn + P sc. ! Steady-State: V in =V dd. " PMOS: subthreshold

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ESE 570: igital Integrated ircuits and VLSI undamentals Lec 17: March 26, 2019 Energy Optimization & esign Space Exploration Lecture Outline! Energy Optimization! esign Space Exploration " Example 3 Energy and Power asics Total Power! P tot P static + P dyn + P sc Review 5 Operating Modes Static Leakage Power! Steady-State: V in =V dd " PMOS: subthreshold " NMOS: resistive $ I Sp = I S # W ' & e & % % L ( $ V GS V T nkt / q ' $ $ V S '' & ( 1 e % kt / q ( & 1 λv S % ( (! W $ ( I Sn = µ n OX # & ( V GS V T V S V 2 + S * - " L % 2, 6 7 1

Static Power Ratioed Logic Total Static Power! I static?! Input low-output high? " I leak! Input high-output low?! P statit p(v out =lowv 2 /R p,on +p(v out =highvi s(w/le -Vt/(nkT/q p(v out =low probability the output is low p(v out =high probability the output is high " I pmos_on " ~V dd /R p,on p(v out =high=1-p(v out =low 8 9 Switching urrents Switching! I switch (t = I sc (t + I dyn (t ynamic Power I sw I dyn I sc 10 11 Switching Energy Switching Power! o we know what this is? Q =! What is Q? E = P(tdt = I(tV dd dt = V dd I(tdt I dyn (tdt Q = V = E = V dd 2 I(tdt apacitor charging energy I dyn! Every time output switches 0#1 pay: " E = V 2! P dyn = (# 0#1 trans V 2 / time! # 0#1 trans = ½ # of transitions! P dyn = (# trans ½V 2 / time 12 13 2

Short ircuit Power Switching! etween V TN and V dd - V TP " oth N and P devices conducting Short ircuit Power 14 15 Peak urrent Short ircuit Energy! I peak around V dd /2 " If V TN = V TP and sized equal rise/fall % I S ν sat OX W V GS V T V ( ST ' * & 2 I(tdt I t % ' 1( peak sc 2 * & # E = V dd I peak t sc % 1& ( Vin $ 2' Vdd Vdd-Vthp Vthn! Make it look like a capacitance, S " Q=I t " Q=V " " E = V dd I peak t sc 1 %% $ $ '' # # 2 && E = V dd Q S E = V dd ( S V dd = S V 2 dd time Vdd Isc Vout tsc tsc time 16 17 Short ircuit Energy! Every time switch " lso dissipate short-circuit energy: E = V 2 " ifferent = sc " cs fake capacitance (for accounting Short ircuit Energy! When transistors switch, both nmos and pmos networks may be nano-tarily ON at once! Leads to a blip of short circuit current! < 10% of dynamic power if rise/fall times are comparable for input and output! We will generally ignore this component in hand analysis, but simulated measured results include it 18 19 3

Switching Waveforms Switching Power! Every time output switches 0#1 pay: " E = V 2! P dyn = (# 0#1 trans V 2 / time! # 0#1 trans = ½ # of transitions! P dyn = (# trans ½V 2 / time 20 21 harging Power harging Power! P dyn = (# trans ½V 2 / time! P dyn = (# 0#1 trans V 2 / time! Often like to think about switching frequency! Useful to consider per clock cycle! Often like to think about switching frequency! Useful to consider per clock cycle " requency f = 1/clock-period! P dyn = (#trans/clock ½V 2 f " requency f = 1/clock-period! P dyn = (# 0#1 trans/clock V 2 f 22 23 Switching Power ctivity actor! P dyn = (#0#1 trans/clock V 2 f! Let a = activity factor a = average #tran 0#1 /clock! Let a = activity factor " a = average #tran 0#1 /clock = 0 p(out i+1! P dyn = av 2 f a = N N 0 1 2 N 2 = N 0 (2N N 0 N 2 2N 24 25 4

ctivity actor! Let a = activity factor " a = average #tran 0#1 /clock = 0p(out i+1 a = N 0 N 1 2 N 2 = N 0(2 N N 0 N 2 2 N Reduce ynamic Power?! P dyn = av 2 f! How do we reduce dynamic power? 26 27 Reduce ctivity actor Reduce ctivity actor Tree hain Tree hain = 0p(out i+1 = 0p(out i+1 a = N 0 N 1 2 N 2 = N 0(2 N N 0 N 2 2 N a = N 0 N 1 2 N 2 = N 0(2 N N 0 N 2 2 N 28 29 Reduce ctivity actor Reduce ctivity actor Tree hain Tree hain 15/256 = 0p(out i+1 = 0p(out i+1 7/64 15/256 a = N 0 N 1 2 N 2 = N 0(2 N N 0 N 2 2 N a = N 0 N 1 2 N 2 = N 0(2 N N 0 N 2 2 N 30 31 5

Reduce ctivity actor Total Power Summary Tree hain! P tot = P static + P sc + P dyn 15/256 = 0p(out i+1 a = N 0 N 1 2 N 2 = N 0(2 N N 0 N 2 2 N 7/64 15/256! P sw = P dyn + P sc a( load V 2 f! P tot a( load V 2 f + VI s(w/le -Vt/(nkT/q! Let a = activity factor a = average #tran 0#1 /clock 32 33 Energy and Power Optimization Power Sources Review: P tot = P static + P dyn + P sc Worksheet Problem 1 Worksheet Problem 1 V in I static I dynamic I sc 0V 140mV 400mV 500mV 600mV 860mV 1V V in I static I dynamic I sc 0V 180p 126u 140mV 6n 100u 400mV 36u 18u 500mV 36u 600mV 36u 18u 860mV 6n 100u 1V 180p 126u 36 37 6

Reduce V dd (Worksheet #2 Reduce V dd (Worksheet #2! V dd =520mV, V thn = V thp =300mV! V dd =520mV, V thn = V thp =300mV V in I static I dynamic I sc V in I static I dynamic I sc 0V 0V 180p 39.6u 140mV 140mV 6n 14.4u 260mV 260mV 111n 360mV 360mV 6n 10.8u 500mV 500mV 180p 36u 38 39 Reduce V dd esign Tradeoffs! What happens as reduce V dd? " Energy? " Static " Switching " elay? 41 Reduce V dd : Reduce V dd :! τ gd =Q/I=(V/I! τ gd =Q/I=(V/I! I d =(µ OX /2(W/L(V gs -V TH 2! τ gd impact?! τ gd 1 V 42 43 7

Reduce V dd :! τ gd =Q/I=(V/I! I d =(µ OX /2(W/L(V gs -V TH 2! τ gd impact? Reduce V dd (Worksheet #3! V thn = V thp =300mV, V in =V dd, estimate Eτ V dd I ds τ/(τ@v dd E switch / (E switch @V dd Eτ 2 1V! τ gd 1 V 700mV 500mV! Ignoring leakage: 350mV E V 2 260mV Eτ 2 onst 44 45 Reduce V dd (Worksheet #3 Increase V th (Worksheet #4! V thn = V thp =300mV, V in =V dd, estimate Eτ! What is impact of increasing threshold on V dd I ds τ/(τ@v dd E switch / (E switch @V dd Eτ 2 " elay? " Leakage? 1V 126u 1 1 1! V dd =1V, V in =V dd 700mV 72u 1.225 0.49.735 500mV 36u 1.75 0.25.766 V thn = -V thp I ds τ/(τ@v th =300mV I static (I stat @V th =300mV I stat / 350mV 9u 4.9 0.12 2.88 300mV 260mV 111n 295 0.07 6k 460mV 600mV 46 47 Increase V th (Worksheet #4 Idea! What is impact of increasing threshold on! Tradeoff " elay? " Speed " Leakage? " Switching energy! V dd =1V, V in =V dd " Leakage energy! Energy-elay tradeoff: Eτ 2 V thn = -V thp I ds τ/(τ@v th =300mV I static (I stat @V th =300mV I stat / 300mV 126u 1 180p 1 460mV 97u 1.3 3.6p 0.02 600mV 72u 1.75 108f 0.0006 48 49 8

esign Problem esign Space Exploration! unction: Identify equivalence of two 32bit inputs! Optimize: Minimize total energy! ssumptions: Match case uncommon " Ie. Most of the time, the inputs won t be matched! eliberately focus on Energy to complement project " but will still talk about delay Penn ESE 370 all 2018 - Khanna 50 Penn ESE 370 all 2018 - Khanna 51 Idea: esign Space Explore Problem Solvable! Identify options! Is it feasible? " ll the knobs you can turn! Explore space systematically " irst, make sure we have a solution so we know our main goal is optimization! ormulate continuum where possible " i.e. formulate trends and tradeoffs quantitatively! How do we decompose the problem? Penn ESE 370 all 2018 - Khanna 52 Penn ESE 370 all 2018 - Khanna 53 Problem Solvable Single Gate Match ondition! Is it feasible?! esign a single gate for match comparison " irst, make sure we have a solution so we know our main goal is optimization! How do we decompose the problem?! What look like built out of nand2 gates and inverters? Penn ESE 370 all 2018 - Khanna 54 Penn ESE 370 all 2018 - Khanna 55 9

Total Power! Static MOS: Knobs! What are the options and knobs we can turn? " P tot a( load +2 sc V 2 f+vi s (W/Le-Vt/(nkT/q! Ratioed Logic: " P tot a( load +2 sc V 2 f +p(v out =lowv 2 /R pon +(1-p(V out =lowvi s (W/Le-Vt/(nkT/q! What can we do to reduce power? Penn ESE 370 all 2018 - Khanna 56 Penn ESE 370 all 2018 - Khanna 57 esign Space imensions Gate! Topology! ( What gates might we build? " ( Gate choice, logical optimization " ( anin, fanout, ( Serial vs. parallel! Gate style / logic family " ( MOS, Ratioed (N load, P load! (E Transistor Sizing! ( Vdd! (G Vth Penn ESE 370 all 2018 - Khanna 58 Penn ESE 370 all 2018 - Khanna 59 Gate Gate! ( High fanin?! ( Serial-Parallel? Penn ESE 370 all 2018 - Khanna 60 Penn ESE 370 all 2018 - Khanna 61 10

( Logic amily! onsiderations for each logic family? ( Logic amily! onsiderations for each logic family? " MOS " Ratioed with PMOS load " Ratioed with NMOS load! Ratioed Logic " Reduced loads result in lower switching power (P dyn $ " Increased static power Penn ESE 370 all 2018 - Khanna 62 Penn ESE 370 all 2018 - Khanna 63 (E Sizing (E Sizing! How do we want to size gates?! How do we want to size gates? " Sizing transistors up will reduce delay # " Reduces short circuit power # # E = V dd I peak t sc % 1& & % (( $ $ 2' ' " Increases dynamic power Penn ESE 370 all 2018 - Khanna 64 Penn ESE 370 all 2018 - Khanna 65 ( Reduce Vdd (G Increase V th?! What happens as reduce V? " Energy? " ynamic $ " Static $ " Switching elay? %! What is impact of increasing threshold on " ynamic Energy? $ " Leakage Energy? $ " elay? % & τ gd =Q/I=(V/I & I d =(µ OX /2(W/L(V gs -V TH 2 & τ gd impact? & τ gd α 1/V & τ gd =Q/I=(V/I & I ds =(ν sat OX (W(V gs -V TH -V ST /2 & Limit on Vdd? Penn ESE 370 all 2018 - Khanna 66 Penn ESE 370 all 2018 - Khanna 67 11

Ideas! Three components of power dmin! HW 7 due 4/5 " P tot = P static + P dyn + P sc! We know many things we can do to our circuits! esign space is large! Systematically identify dimensions! Identify continuum (trends tuning when possible! Watch tradeoffs " don t over-tune 68 69 12