TAPE AND BOX TYPE ED AMPS Pb ead-free Parts DBK264/S76/TBS-X DATA SHEET DOC. NO : REV. : DATE : QW95- DBK264/S76/TBS-X A 31 - Mar. - 28
Page 1/6 Package Dimensions P2 ΔH H2 H1 W2 W W1 W3 D P1 F P T DBK264/S76 2.9 3.1 1.5 MAX 3.3 4.3 TYP 25.MIN 1.MIN 2.54TYP + - Note : 1.All dimension are in millimeter tolerance is ±.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
Page 2/6 Absolute Maximum Ratings at Ta=25 Parameter Symbol Ratings DBK UNIT Forward Current IF 3 ma Peak Forward Current Duty 1/1@1KHz IFP ma Power Dissipation PD 12 mw Reverse Current @5V Ir 5 μa Electrostatic Discharge( * ) ESD 15 V Operating Temperature Topr -2 ~ +8 Storage Temperature Tstg -3 ~ + Static Electricity or power surge will damage the ED. Use of a conductive wrist band or anti-electrosatic * glove is recommended when handing these ED. All devices, equipment and machinery must be properly grounded. Typical Electrical & Optical Characteristics (Ta=25 ) PART NO MATERIA Emitted COOR ens Dominant wave length λ D nm Spectral halfwidth λnm Forward voltage @2mA(V) Typ. Max. uminous intensity @5mA(mcd) Min. Typ. Viewing angle 2θ 1/2 (deg) DBK264/S76/TBS-X InGaN/GaN Blue Blue Diffused 47 3 3.5 4. 22 45 38 Note : 1.The forward voltage data did not including ±.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance.
Page 3/6 Dimensions Symbol Information SYMBO ITEMS Tape Feed Hole Diameter Component ead Pitch Front-To-Rear Deflection Feed Hole To Bottom Of Component Feed Hole To Overall Component Height ead ength After Component Height Feed Hole Pitch ead ocation Center Of Component ocation Overall Taped Package Thickness Feed Hole ocation Adhesive Tape Width Adhesive Tape Position Tape Width Dimensions Symbol Information OPTION CODE TBS-1 TBS-2 TBS-3 TBS-4 TBS-5 TBS-6 TBS-7 TBS-8 TBS-9 TBS-1 REMARK:TBS=Tape And Box Straight eads SYMBO D F 2.3 H H1 H2 P P1 P2 T W Minimum 3.8.15 SPECIFICATIONS.9 17.5.69 21.5.85 25.5 1. 27.5 1.8 22.5.89 19.9.78 24..94 24.5.96 19..75 18.4.72 12.4 4.4 W.49.17 5.1.2 8.5 W1 14.5 W2 W3 17.5 mm inch mm.33 7.69 Package Dimensions Maximum 4.2 3. 2. 18.5 22.5 26.5 28.5 23.5 2.9 25. 25.5 2. 19.4 36 11. 13. 5.8 7.7 1.42 9.75 15.5 4. 19. inch.17.12.8.73.89 1.4 1.12.93.82.98 1..79.76 1.42.43 1.23.3.6.38.61.16.75 Specification Description Symbol minimum mm inch maxmum mm inch W Overall ength 33 13. 34 13.4 Overall Width W 265 1.4 275 1.8 H Overall Thickness H 5 1.97 6 2.4 Quantity/Box 25PCS
Page 4/6 Typical Electro-Optical Characteristics Curve DBK CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current Forward Current(mA) 1 1 1 Relative Intensity Normalize @2mA 1. 2. 3. 4. 5. 1 1 3. 2.5 2. 1.5 1.. Forward Voltage(V) Forward Current(mA) Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 1.2 3. Forward Voltage@2mA Normalize @25 1.1 1..9.8-4 -2 2 4 6 8 Relative Intensity@2mA Normalize @25 2.5 2. 1.5 1.. -4-2 2 4 6 8 Ambient Temperature( ) Ambient Temperature( ) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@2mA 1.. 4 45 5 55 Wavelength (nm)
Page 5/6 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:3W Max Temperature 35 C Max Soldering Time:3 Seconds Max(One time only) Distance:2mm Min(From solder joint to body) 2.Wave Soldering Profile Dip Soldering Preheat: 12 C Max Preheat time: 6seconds Max Ramp-up 2 C/sec(max) Ramp-Down:-5 C/sec(max) Solder Bath:26 C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) Temp( C) 26 26 C3sec Max 5 /sec max 12 25 2 /sec max Preheat 6 Seconds Max 5 15 Time(sec) Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above.
Page 6/6 Reliability Test: Test Item Test Condition Description Reference Standard Operating ife Test 1.Under Room Temperature 2.If=2mA 3.t= hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MI-STD-75: 126 MI-STD-883: 5 JIS C 721: B-1 High Temperature Storage Test 1.Ta=15 ±5 2.t= hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MI-STD-883:8 JIS C 721: B-1 ow Temperature Storage Test 1.Ta=-4 ±5 2.t= hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 721: B-12 High Temperature High Humidity Test 1.Ta=85 2.RH=85% 3.t=24hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. MI-STD-22:13B JIS C 721: B-11 Thermal Shock Test 1.Ta=15 ±5 &-4 ±5 (1min) (1min) 2.total 1 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MI-STD-22: 17D MI-STD-75: 151 MI-STD-883: 111 Solder Resistance Test 1.T.Sol=26 ±5 2.Dwell time= 1 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MI-STD-22: 21A MI-STD-75: 231 JIS C 721: A-1 Solderability Test 1.T.Sol=23 ±5 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MI-STD-22: 28D MI-STD-75: 226 MI-STD-883: 23 JIS C 721: A-2