I C 75A V CES V -element in a pack High Insulated type LPT-IGBT / Soft Recovery Diode AlSiC baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm anuary 3 HVM-5-C
MAXIMUM RATINGS Symbol Item Conditions Ratings Unit V GE = V, T j = +5 C V CES Collector-emitter voltage V GE = V, T j = +5 C 3 V GE = V, T j = 5 C 57 V V GES Gate-emitter voltage V CE = V, ± V I C DC, T c = 95 C 75 A Collector current I CRM Pulse (Note ) A I E DC 75 A Emitter current (Note ) I ERM Pulse (Note ) A P tot Maximum power dissipation (Note 3) T c = 5 C, IGBT part W V iso Isolation voltage RMS, sinusoidal, f = Hz, t = min. V V e Partial discharge extinction voltage RMS, sinusoidal, f = Hz, Q PD pc V T j unction temperature 5 ~ +5 C T jop Operating junction temperature 5 ~ +5 C T stg Storage temperature 55 ~ +5 C t psc Short circuit pulse width V CC = V, V CE V CES, V GE =5V, T j =5 C s ELECTRICAL CHARACTERISTICS Symbol Item Conditions Limits Min Typ Max Unit I CES Collector cutoff current V CE = V CES, V GE = V.. ma V GE(th) Gate-emitter threshold voltage V CE = V, I C =75 ma, 5..3. V I GES Gate leakage current V GE = V GES, V CE = V,.5.5 µa C ies Input capacitance 3. nf V CE = V, V GE = V, f = khz C oes Output capacitance. nf C res Reverse transfer capacitance. nf Q G Total gate charge V CC = 3V, I C = 75A, V GE = ±5V.5 µc V CEsat Collector-emitter saturation voltage (Note ) I C =75 A 3. V GE = 5 V. 5. V t d(on) Turn-on delay time.5 V CC = 3 V.. t r Turn-on rise time I C = 75 A. V GE = ±5 V..5 E on(%) Turn-on switching energy (Note 5) R G(on) = 3.3 Ω 3.35 L s = 5 nh. E on Turn-on switching energy (Note ) 3.5. t d(off) Turn-off delay time 7. V CC = 3 V. 9. t f Turn-off fall time I C = 75 A. V GE = ±5 V.5. E off(%) Turn-off switching energy (Note 5) R G(off) = 33 Ω 3. L s = 5 nh. E off Turn-off switching energy (Note ) 3..9 anuary 3 (HVM-5-C)
ELECTRICAL CHARACTERISTICS (continuation) Symbol Item Conditions Limits Min Typ Max V EC Emitter-collector voltage (Note ) (Note ) I E = 75 A 3.3 V GE = V 3.. t rr Reverse recovery time (Note ).5.7 I rr Reverse recovery current (Note ) V CC = 3 V I C = 75 A 9 Q rr Reverse recovery charge (Note ) GE R G(on) = 3.3 Ω 3 9 V = ±5 V E rec(%) Reverse recovery energy (Note 5).9.7 (Note ) L s = 5 nh E rec Reverse recovery energy (Note ). (Note ). Unit V A µc THERMAL CHARACTERISTICS Limits Symbol Item Conditions Unit Min Typ Max R th(j-c)q unction to Case, IGBT part. K/kW Thermal resistance R th(j-c)d unction to Case, FWDi part. K/kW R th(c-s) Contact thermal resistance Case to heat sink, grease = W/m k, D (c-s) = m. K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Min Typ Max Unit M t M : Main terminals screw 7.. N m M s Mounting torque M : Mounting screw 3.. N m M t M : Auxiliary terminals screw. 3. N m m Mass. kg CTI Comparative tracking index d a Clearance. mm d s Creepage distance 5. mm L P CE Parasitic stray inductance 5. nh R CC +EE Internal lead resistance T C = 5 C. mω r g Internal gate resistance T C = 5 C. Ω Note. Pulse width and repetition rate should be such that junction temperature (T j ) does not exceed T jopmax rating.. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWD i ). 3. unction temperature (T j ) should not exceed T jmax rating (5 C).. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. E on(%) / E off(%) / E rec(%) are the integral of.v CE x.i C x dt.. Definition of all items is according to IEC 77, unless otherwise specified. anuary 3 (HVM-5-C) 3
PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) T j = 5 C V GE = 5V V CE = V GE 5 5 V GE = 3V Coll ector Current [A] 75 V GE = V V GE = V Coll ector Current [A] 75 T j = 5 C T j = 5 C 5 5 Collector - Emitter Voltage [V] Gate - Emitter Voltage [V] COLLECTOR-EMITTER SATURATION VOLTAGE FREE-WHEEL DIODE FORWARD VGE = 5 V 5 5 T j = 5 C Coll ector Current [A] 75 T j = 5 C T j = 5 C Emitter Current [A] 75 T j = 5 C 5 5 Collector-Emitter Saturation Voltage [V] 3 5 Emitter-Collector Voltage [V] anuary 3 (HVM-5-C)
PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 5 VCE = 3 V, IC = 75A T j = 5 C Capacitance [nf] Ci es Co es Gate-Emitter Voltage [V] 5-5 VGE = V, T j = 5 C f = khz Cres -. Coll ector-emitter Voltage [V] -5 Gate Charge [µc] HALF-BRIDGE SWITCHING ENERGY VCC = 3 V, VGE = ± 5V RG( on) = 3.9 Ω, RG(off ) = 33Ω L S = 5 nh, T j = 5 C E on HALF-BRIDGE SWITCHING ENERGY VCC = 3 V, I C = 75A VGE = ±5V, L S = 5n H T j = 5 C, Ind uctive l oad Switching Energies [] E off Switching Energies [] E on E rec E rec 5 75 5 Collector Current [A] Gate resistor [Ohm] anuary 3 (HVM-5-C) 5
PERFORMANCE CURVES Switching Energies [] SWITCHING ENERGY VCC = 3 V, I C = 75A VGE = ±5V, L S = 5n H T j = 5 C, Ind uctive l oad E off Switching Times [] HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL)HALF-BRIDGE. V CC = 3 V, V GE = ± 5V R G(on) = 3.9Ω, R G( off) = 33Ω L S = 5n H, T j = 5 C t f t r t d( off) t d( on) 3 5 Gate resistor [Ohm]. Collector Current [A] FREE-WHEEL DIODE REVERSE RECOVERY REVERSE BIAS SAFE OPERATING AREA (RBSOA) Reverse Recovery Time [] V CC = 3 V, V GE = ± 5V R G(on) = 3.9Ω, L S = 5 nh T j = 5 C, Ind uctive l oad I rr t rr Reverse Recovery Current [A] Coll ector Current [A] VCC 5 V, VGE = ± 5V T j = 5 C, R G(off ) = 33Ω. Emitter Current [A] Collector-Emitter Voltage [V] anuary 3 (HVM-5-C)
PERFORMANCE CURVES SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) V CC 5 V, V GE = ± 5V T j = 5 C, R G(on) = 3.9Ω, R G( off) = 33Ω VCC 5 V, di /d t <.5 ka/ T j = 5 C Collector Current [ka] Reverse Recovery Current [A] Collector-Emitter Voltage [V] Emitter-Collector Voltage [V] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance..... R th(j-c )Q =. K/kW R th(j-c )R =.K/kW... Time [s] Z th( jc ) n t ( t ) R exp i i i 3 R i [K/kW] :.55.3..95 t i [sec] :..3.7.7 anuary 3 (HVM-5-C) 7
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