High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0. V at I F = A FEATURES Trench MOS Schottky technology Available 8 Low forward voltage drop, low power losses High efficiency operation 7 6 Meets MSL level, per J-STD-00, LF maximum peak of 60 C FlatPAK x 6 and / or 7, 8 AEC-Q0 qualified available - Automotive ordering code: base P/NHM Material categorization: for definitions of compliance please see /doc?999 and / or, 6 TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS click logo to get started For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. Models Available MECHANICAL DATA PRIMARY CHARACTERISTICS I F(AV) x A V RRM 60 V I FSM 80 A V F at I F = A (T A = C) 0.0 V T J max. 7 C Case: FlatPAK x 6 Molding compound meets UL 9 V-0 flammability rating Base P/N-M - halogen-free, RoHS-compliant Base P/NHM - halogen-free, RoHS-compliant, and AEC-Q0 qualified Terminals: matte tin plated leads, solderable per J-STD-00 and JESD -B0 M and HM suffix meets JESD 0 class whisker test Package FlatPAK x 6 Circuit configuration Separated cathode MAXIMUM RATINGS (T A = C unless otherwise noted) PARAMETER SYMBOL UNIT Device marking code V8M60D Maximum repetitive peak reverse voltage V RRM 60 V Maximum DC forward current per diode Peak forward surge current 8. ms single half sine-wave superimposed on rated load per diode I () F(AV) A I () F(AV) A I FSM 80 A Operating junction temperature range T () J -0 to +7 C Storage temperature range T STG - to +7 C () With infinite heatsink () Free air, mounted on recommended pad area () The heat generated must be less than the thermal conductivity from junction-to-ambient: dp D /dt J < /R θja Revision: 8-Jul-08 Document Number: 876 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9000
ELECTRICAL CHARACTERISTICS (T A = C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I F = A 0. - T A = C I F = A 0.6 0.6 Instantaneous forward voltage per diode V () F V I F = A 0. - T A = C I F = A 0.0 0.8 T A = C - 0. Reverse current per diode V R = 60 V I () R ma T A = C. 6 Typical junction capacitance per diode.0 V, MHz C J 00 - pf () Pulse test: 00 μs pulse width, % duty cycle () Pulse test: pulse width ms THERMAL CHARACTERISTICS (T A = C unless otherwise noted) PARAMETER SYMBOL TYP. MAX. UNIT Thermal resistance per diode R θja ()() 00 - R θjm ().. () The heat generated must be less than thermal conductivity from junction-to-ambient: dp D /dt J < /R θja () Free air, mounted on recommended copper pad area; thermal resistance R θja - junction-to-ambient () Mounted on infinite heat sink; thermal resistance R θjm - junction-to-mount C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE -M/H 0.0 H 00 7" diameter plastic tape and reel -M/I 0.0 I 6000 " diameter plastic tape and reel HM/H () 0.0 H 00 7" diameter plastic tape and reel HM/I () 0.0 I 6000 " diameter plastic tape and reel Note () AEC-Q0 qualified Revision: 8-Jul-08 Document Number: 876 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9000
RATINGS AND CHARACTERISTICS CURVES (T A = C unless otherwise noted) Average Forward Rectified Current (A) R thjm =. C/W R thja = 00 C/W T M measured at cathode terminal mount typical values 0 0 0 7 00 0 7 Ambient / Mount Temperature ( C) Fig. - Maximum Forward Current Derating Curve Instantaneous Reverse Current (ma) 00 0 T J = 0 C T J = 7 C 0. T J = C T J = 00 C 0.0 T J = C 0.00 0.000 0.0000 T J = -0 C 0.00000 0 0 0 0 0 60 70 80 90 00 Percent of Rated Peak Reverse Voltage (%) Fig. - Typical Reverse Leakage Characteristics Average Power Loss (W).0 D = 0.8. D = 0..0 D = 0. D =.0. D = 0. D = 0..0 T 0. D = t p /T 0.0 0 0..... Average Forward Current (A) Fig. - Forward Power Loss Characteristics t p Junction Capacitance (pf) 0 000 000 00 0 0. 0 00 Reverse Voltage (V) T J = C f =.0 MHz V sig = 0 mv p-p Fig. - Typical Junction Capacitance Instantaneous Forward Current (A) 00 0 0. T J = 7 C T J = 0 C T J = C T J = 00 C T J = C T J = -0 C 0 0. 0. 0. 0. 0. 0.6 0.7 0.8 0.9.0 Transient Thermal Impedance ( C/W) 000 Junction-to-ambient 00 0 0.0 0. 0 00 Instantaneous Forward Voltage (V) Fig. - Typical Instantaneous Forward Characteristics t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 8-Jul-08 Document Number: 876 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D D 8 7 6 x L 6 x e 8 x b E E Top View x L (E) x b F F F F (8 x a) ( x d) 6 7 D x D D Bottom View (Dual Pad) 8 (d) M E (K) (8 x Θ) 0.00 (0.7) 0.80 (.6) 0.08 (.08) c Side View A 0.9 (.8) 0.0 (.0) 0.0 (0.6) 0.9 (6.9) 0.9 (.) 0.09 (.00) 0.00 (0.7) PCB Footprint (Dual Pad) 0.00 (.7) DIM. INCHES MILLIMETERS MIN. NOM. MAX. MIN. NOM. MAX. A 0.0 0.09 0.0 0.89 0.99.09 (a) - 0.006 - - 0. - b 0.0 0.07 0.00 0. 0. 0. b 0.0 0.07 0.00 0. 0. 0. c 0.008-0.0 0.0-0. D 0.97 0.0 0.09.00..0 D 0.89 0.9 0.97.80.90.00 D 0. 0.6 0.69.90.0.0 D 0.00 0.0 0.0 0.0 0.60 0.80 D 0.06 0.069 0.07.60.7.90 (d) - 0.06 - - 0.0 - (d) - 0.00 - - 0. - E 0.8 0. 0.0 6.0 6.0 6. E 0.8 0. 0.6.80.90 6.00 E 0.7 0.6 0.7.00.0.0 (E) - 0. - -.6 - e 0.00 BSC.7 BSC (K) 0.09 - -.00 - - L 0.09-0.0 0.8 -.0 L 0.0-0.0 0.0-0.80 M 0.8 0.8 0.8..0.7 Θ 0-0 0-0 Dimensioning and tolerancing per ASME Y.-009 Dimensions D and E do not include mold flash or gate burrs Dimension (XX) means reference only Revision: 8-Jul-08 Document Number: 876 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9000
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