Quantum Informa,on with NV- Centers (QINVC) Jan Meijer (Uni Leipzig) Coopera,on between CEA Saclay France, ENS Cachan France, University StuKgart Germany, University Leipzig Germany, University Warwick United Kingdom
Partner 1: CEA- Saclay, Paris D. Esteve group Research Group in Quantum Electronics, CEA- Saclay, France Exper,se: Daniel Esteve (Coordinator) Superconduc,ng quantum circuits Mesoscopic physics Hybrid systems Patrice Bertet
Partner 2: ENS Cachan, Paris J.- F. Roch group Exper,se: Quantum op,cs Op,cal and spin proper,es of NV centers AFM with NV- centers Jean- Francois ROCH
Partner 3: Uni Stutgart (Germany) Jörg Wrachtrup group Exper,se: Spin physics and spin proper,es Direct coupling Inventor of the NV centers as quantum device Jörg Wrachtrup
Partner 4: University Leipzig (Germany) J. Meijer group Exper,se: Single ion Implanta,on First crea,on of ar,fical NV centers S. Pezzagna J. Meijer S. Pezzagna Small 2010 (Former Prof. Butz group)
Partner 5: Uni. Warwick (United Kingdom) Mark Newton group Exper,se: Diamond crystal grown (E6) NMR, ESR
Material Science Group Solid state quantum Physics P5 Uni Warwick Diamond Growth Characterisa,on P4 Uni Leipzig Addressing of Single NVs P1 CEA Saclay Superconduc,ng Hybrid Circuts P2 ENS Cachan Quantum Op,cs P3(Uni. StuKgart) Spin Physcis Start 2011 ; Dura,on 36 month
Quantum Informa,on with NV- Centers (QINVC) Why NV Centers?
Color centers in diamond G- Band: Sp 2 - Inclusion H3- center 3H- Center NV- center Pink star: 62 Mio. Euro J. Rödiger, A. Zaitsev,J. Meijer et. al. 2013 Unpubl,
NV proper,es
NV Spin proper,es Optically Detected Magnetic Resonance dark state Fluorescence (a. u.) bright state 2.80 2.85 2.90 2.95 MW frequency (GHz) V N V N The main goal to do spin-spin coupling (for the distance < 20 nm with T 2 ~ 1 ms) Lesik et al 2013 G.Balasubramanian et al., Nature Materials 8, 383-387 (2009) P.Neumann et al., Nature Physics 6, 249-253 (2010)
NV- centers Easy to ini,alized Long T2,mes, low decoherence Single shot readout Quantum gate opera,on Scalable - > DiVincenzo criteria to build a quantum computer
Two Strategies: AFM Quantem Bus hybrid system with superconduc,ng qubits
Hybrid Quantum Computer
Hybrid System CEA Sacley
Single Spin Coupling CEA Sacley
AFM Quantum Bus Cachan, UStuK
RealizaFon idea: producfon of NV- centers by N implantafon into diamond requirements: technical solufons to implant countable single ions with nm spafal resolufon Physical solu,on: high yield produc,on of NV centers, charge state control, mobility of NV
Our aims for NV centres Nanoscalability Nanometer placement Scalability / Reproducibility Shallow centres bulk centres Conversion efficiency Charge state Overall properbes Using Nitrogen ion implantabon
Ion implantabon - straggling Proton beam (3 MeV) in diamond N + ions 1 MeV N + ions 5 kev 750 nm Low straggling => high resolution Simula,on with SRIM J. Ziegler, hkp://srim.org
CreaBon efficiency (N - > NV) Scan of the diamond surface implanted with 1x10 13 nitrogen/cm² 20µm Pezzagna et al., New Journal of Physics 2010, 12, 065017
Ion implantabon towards nm resolubon Collimation apertur e Positioning + AFM, STM Resolution of the table ~ 1 nm Meijer et al., Appl. Phys. A 91, 567 (2008)
Atomic force microscope 50µm Hole made by Focussed Ion Beam Ga + 30keV Tip hole
Reduced hole => below 20 nm Non Contact Mode: We can implant into pillars, phtomic crystalls etc. Pezzagna et al., Small. 6, 2117 (2010)
Nitrogen Focused Ion Beam (FIB) In collabora,on with Orsay Physics A wide range of applica,ons Lesik et al., Phys. Stat. Sol. A (2013) Cachan, ULeip
High resolubon ion implantabon «Meijer, APL (2005) «Pezzagna, PSSa (2011) «Spinicelli, NJP (2011) «Toyli, NanoLeK (2010) «Lesik, PSSa (2013) «Pezzagna, Small (2010) Pezzagna et al., New J Phys. 13, 035024 (2011)
RealizaFon idea: producfon of NV- centers by N implantafon into diamond requirements: technical solufons to implant countable single ions with nm spafal resolufon Physical solu,on: high yield produc,on of NV centers, charge state control, mobility of NV
Material: E6: 3x3 mm (100) op,cal grade! 100kV CN - Implantaion NV- center H3- center NV 0 NV - 3H- Center ULeip, UStuK J. Rödiger, A. Zaitsev, J. Meijer et. al. 2013 Unpubl,
Crea,on Efficiency UStuK, Warwick
Crea,on Efficiency 10x Improvment by anneling op,miza,on
No change @ 1100 C 90 min Cachan, ULeip resolu,on 5 nm Wildanger, Roch, Meijer 2012 in prep. Diffusion of single NV? Op,cal detec,on of single NVs:
ODMR for orienta,on control Magne,c field Wildanger, Roch, Meijer 2012 in prep.
ODMR: Orienta,on of single NVs? No change @ 1100 C 90 min Wildanger, Roch, Meijer 2012 in prep.
Charge state control Ac,ve control by applied voltage
Individual Adressing Ac,ve control by applied voltage CB 5,47eV 2,0eV 1,2eV NV - NV 0 NV +? Φ E F VB Charge state of NV
Bipolar: In- plane PIN- Diode Lohrmann, et al. APL 2011 SP- LED by growing: N. Mizuochi et al. Nature photonics 2012
PL- Intensity of a single NV from NV - to NV 0 Lohrmann et al unpubl. May be a dynamic process? beker NV + - > NV -?
Addressing of NVs by ac,ve charge control MW Ini,aliza,on
Addressing of NVs by ac,ve charge control MW Ini,aliza,on
Addressing of NVs by ac,ve charge control Ini,aliza,on
Addressing of NVs by ac,ve charge control Ini,aliza,on
Conclusion Material science: Op,miza,on in NV produc,on Addressing of NV within 15 nm NVs stable un,l 1300 C No diffusion @ 1100 C First results in coupling NV and superconduc,ng qubits Opimiza,on of the AFM- bus system
Thank You! coopera,on with I. Rangelow,Ilmenau and L. Bischop FZR