SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS - V R DS(on),max 8 mw I D - A Avalanche rated Pb-free lead plating; RoHS compliant PG-SOT-3 Qualified according to AEC Q Halogen-free according to IEC649-- Type Package Tape and Reel Information Marking Lead free Packing PG-SOT-3 H637: pcs/reel Yes Non dry Maximum ratings, at T j =5 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C =5 C A T C =7 C Pulsed drain current I D,pulse T C =5 C.8 4 Avalanche energy, single pulse E AS I D =- A, R GS =5 W 57 mj Gate source voltage V GS ± V Power dissipation P tot T C =5 C.8 W Operating and storage temperature T j, T stg -55... 5 C ESD Class Soldering temperature IEC climatic category; DIN IEC 68- JESD-A4-HBM A (5V to 5V) 6 C 55/5/56 Rev.5 page --8
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thja minimal footprint, steady state - - 5 K/W 6 cm cooling area ), steady state - - 7 Electrical characteristics, at T j =5 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =-5 ma - - - V Gate threshold voltage V GS(th) V DS =V GS,I D =-38 µa -. -.5 -. Zero gate voltage drain current I DSS V DS =- V, V GS = V, T j =5 C V DS =- V, V GS = V, T j =5 C - -. - µa - - - Gate-source leakage current I GSS V GS =- V, V DS = V - - - na Drain-source on-state resistance R DS(on) V GS =- V, I D =- A - 6 8 mw V GS =-4.5 V, I D =-.93 A Transconductance g fs V DS > I D R DS(on)max, I D =-.8 A - 88.7.4 - S ) Device on 4 mm x 4 mm x.5 mm epoxy PCB FR4 with 6 cm (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. Rev.5 page --8
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 8 37 pf Output capacitance C oss V GS = V, V DS =-5 V, f = MHz - 7 94 Reverse transfer capacitance C rss - 34 5 Turn-on delay time t d(on) - 4.6 6.9 ns Rise time t r V DD =-5 V, V GS =- V, I D =- A, - 4.3 6.5 Turn-off delay time t d(off) R G =6 W -. 3.8 Fall time t f - 8.3.5 Gate Charge Characteristics ) Gate to source charge Q gs -.8. nc Gate to drain charge Q gd V DD =-8 V, I D =- A, - 4.3 6.4 Gate charge total Q g V GS = to - V -.4 6.5 Gate plateau voltage V plateau -.9 - V Reverse Diode Diode continuous forward current I S T C =5 C - - -. A Diode pulse current I S,pulse - - -4. Diode forward voltage V SD V GS = V, I F =- A, T j =5 C -.84. V Reverse recovery time t rr - 47 - ns V R =5 V, I F = I S, Reverse recovery charge Q rr di F /dt = A/µs - 84 - nc ) See figure 6 for gate charge parameter definition Rev.5 page 3 --8
Z thjs [K/W] P tot [W] Power dissipation Drain current P tot =f(t C ) I D =f(t C ); V GS V..5.8.6.4.5. 4 8 6 4 8 6 T A [ C] T A [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T C =5 C; D = Z thjc =f(t p ) parameter: t p parameter: D =t p /T limited by on-state resistance µs.5 ms.. ms.5. - ms. single pulse DC - 3 -V DS [V] - -5-4 -3 - - t p [s] Rev.5 page 4 --8
g fs [S] R DS(on) [W] 5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =5 C R DS(on) =f(i D ); T j =5 C parameter: V GS parameter: V GS 4 - V -7 V -5 V -4 V.6.4-3 V -3.5 V 3. -4 V -3.5 V.8-5 V -3 V.6-7 V - V.4. 4 6 8 3 4 -V DS [V] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS > I D R DS(on)max g fs =f(i D ); T j =5 C parameter: T j 4 3 3 5 C 5 C 3 4 5 3 4 -V GS [V] Rev.5 page 5 --8
C [pf] I F [A] R DS(on) [W] -V GS(th) [V] 9 Drain-source on-state resistance Typ. gate threshold voltage R DS(on) =f(t j ); I D =- A; V GS =- V V GS(th) =f(t j ); V GS =V DS ; I D =-38 µa 3.5 max. 98 % typ. min..5 typ. -6-6 4 T j [ C] -6-6 4 8 T j [ C] Typ. capacitances Forward characteristics of reverse diode C =f(v DS ); V GS = V; f = MHz I F =f(v SD ) parameter: T j 3 5 C, typ Ciss 5 C, typ 5 C, 98% 5 C, 98% Coss. Crss 4 6 8..5.5 -V DS [V] -V SD [V] Rev.5 page 6 --8
-V BR(DSS) [V] -I AV [A] -V GS [V] 3 Avalanche characteristics 4 Typ. gate charge I AS =f(t AV ); R GS =5 W parameter: T j(start) V GS =f(q gate ); I D =- A pulsed parameter: V DD V 5 V 8 V 8 5 C 6 5 C C 4. 5 5 t AV [µs] -Q gate [nc] 5 Drain-source breakdown voltage 6 Gate charge waveforms V BR(DSS) =f(t j ); I D =-5 µa 5 V GS Q g 5 95 9 V gs(th) 85 8 75 Q g(th) Q sw Q gate 7-6 - 6 4 8 T j [ C] Q gs Q gd Rev.5 page 7 --8
Package Outline: PG-SOT-3 Footprint: Packaging: Dimensions in mm Rev.5 page 8 --8
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