19-4187; Rev 4; 7/1 μ μ PART AMPS PER PACKAGE PIN- PACKAGE + * TOP MARK MAX965AZK+ 1 5 SOT3 ADSI MAX965AZK/V+ 1 5 SOT3 ADSK MAX965AUA+ 1 8 μmax-ep* AABI MAX965ATA+ 1 8 TDFN-EP* BKX MAX9651AUA+ 8 μmax-ep* AABH MAX9651ATA+ 8 TDFN-EP* BKY 16V V DD V REF IN_+ MAX965 OUT_ TFT LCD IN_- GND *R S TFT-LCD CAPACITANCE *R S MAY BE NEEDED FOR SOME APPLICATIONS. Maxim Integrated Products 1
ABSOLUTE MAXIMUM RATINGS Supply Voltage (V DD to GND)...-.3V to +V Any Other Pin to GND...-.3V to (V DD +.3V) IN_+/IN_- (current)...±ma OUT_ (current)...1.3a Continuous Power Dissipation (T A = +7 C) 5-Pin SOT3 (derate 3.7mW/ C above +7 C)...97.4mW 8-Pin μmax-ep (derate 1.9mW/ C above +7 C)...13.9mW 8-Pin TDFN-EP (derate 3.8mW/ C above +7 C)...1951.mW Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Operating Temperature Range...-4 C to +15 C Junction Temperature...+15 C Storage Temperature Range...-65 C to +15 C Lead Temperature (soldering, 1s)...+3 C Soldering Temperature (reflow)...+6 C (V DD = 19V, V GND = V, V CM = = V DD /, T A = T MIN to T MAX, unless otherwise noted. Typical values are at T A = +5 C.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Voltage Range V DD Guaranteed by PSRR 6 V Quiescent Current I DD Per channel 3.7 8 ma High Output Voltage V OH I H = +5mA, V IN = V DD V DD -.3 Low Output Voltage V OL I L = -5mA, V IN = V.5.3 V T A = +5 C -14 3.5 +14 Input Offset Voltage V OS T A = -4 C to +15 C -17 +17 Load Regulation LR V DD -.5 I OUT = to -8mA +. I OUT = to +8mA -. Input Bias Current I FB At V IN = 9.5V.1 1 μa Voltage Gain A V R L = 1kΩ, C L = 5pF.99 1.1 V/V Power-Supply Rejection Ratio PSRR V DD = 6V to V, V CM = = 3V 7 95 db Common-Mode Input Voltage Range CMVR Inferred from CMRR test.5 Common-Mode Rejection Ratio CMRR.5V V CM V DD -.5V 6 8 db Continuous Output Current I O = 9.5V MAX965AZK+ (Note ) MAX965AUA+ 8 V DD = 15V, = 7.5V MAX965ATA+ ±35 V DD -.5 V mv mv/ma V ma Transient Peak Output Current I PK (Note 3) ±1.3 A Bandwidth BW -3dB 35 MHz Slew Rate SR 4V step, C L = 5pF, R L = 1kΩ, A V = +1V/V 4 V/μs Settling Time t S Settling to.1% of, I L = to 1mA, R S =.Ω, C S =.1μF (Figure 1). μs
ELECTRICAL CHARACTERISTICS (continued) (V DD = 19V, V GND = V, V CM = = V DD /, T A = T MIN to T MAX, unless otherwise noted. Typical values are at T A = +5 C.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Maximum Load Capacitance C LOAD (Note 4) 15 nf Noninverting Input Resistance R IN+ (Note 5) 1 MΩ Inverting Input Resistance R IN- (Note 5) 1 MΩ Input Capacitance C IN 3 pf Thermal Shutdown +17 C Thermal Shutdown Hysteresis 15 C Note 1: All devices are 1% production tested at T A = +5 C. All temperature limits are guaranteed by design. Note : Continuous output current is tested with one output at a time. Note 3: See the Thermal Shutdown with Temperature Hysteresis section. Note 4: A series resistor can extend load capacitance range. The settling time can be optimized by a small series resistance. See the Applications Information section for more information. Note 5: Inputs are protected by back-to-back diodes. (V DD = 19V, GND =, V CM = = V DD /, T A = +5 C, unless otherwise specified.) INPUT OFFSET VOLTAGE (mv) 4 3 1-1 - -3 INPUT OFFSET VOLTAGE DEVIATION vs. SUPPLY VOLTAGE T A = +15 C T A = +5 C T A = -4 C MAX965 toc1 INPUT OFFSET VOLTAGE (mv) 8 7 6 5 4 3 1 INPUT OFFSET VOLTAGE DEVIATION vs. TEMPERATURE MAX965 toc I OUT (5mA/div) (15mV/div).5A RESPONSE LOAD TRANSIENT SOURCING.1A RESPONSE 1A RESPONSE MAX965 toc5-4 6 9 1 15 18 1 SUPPLY VOLTAGE (V) -5-5 5 5 75 1 15 TEMPERATURE ( C) TIME (1μs/div) 3
(V DD = 19V, GND =, V CM = = V DD /, T A = +5 C, unless otherwise specified.) SUPPLY CURRENT (ma) 8 7 6 5 4 3 1 SUPPLY CURRENT vs. TEMPERATURE -5-5 5 5 75 1 15 TEMPERATURE ( C) MAX965 toc4 I OUT (5mA/div) (15mV/div).5A RESPONSE LOAD TRANSIENT SOURCING TIME (1μs/div).1A RESPONSE 1A RESPONSE MAX965 toc5 I OUT (5mA/div) (15mV/div).5A RESPONSE LOAD TRANSIENT SINKING TIME (1μs/div) 1A RESPONSE.1A RESPONSE MAX965 toc6 STARTUP WAVEFORM 1ms/div MAX965 toc7 I DD 1mA/div V DD 1V/div V IN 5V/div 5V/div MAX965 STEP RESPONSE WITH VARIOUS C L C L = 1pF C L = pf C L =.1μF CL =.μf μs/div MAX965 toc8 5V/div 5V/div 5V/div 5V/div GAIN (db) OPEN-LOOP GAIN AND PHASE vs. FREQUENCY MAX965 toc9 1 36 1 GAIN C L = 1pF 3 8 4 6 18 4 1 6 PHASE - -6-4 -1-6 -18-8 -4 1E+ 1E+3 1E+6 1E+ 1E+3 1E+3 1E+6 1E+6 FREQUENCY (Hz) PHASE (DEG) VOLTAGE GAIN (db) 15 1 5 CLOSED-LOOP SMALL-SIGNAL FREQUENCY RESPONSE FOR VARIOUS C L C L =.1μF C L =.1μF C L =.μf C L =.1μF C L = 56pF C L = 1pF -5 C L = 1pF -1 C L = 56pF -15.1.1 1 1 1 FREQUENCY (MHz) MAX965 toc1 GAIN (db) SMALL-SIGNAL GAIN vs. FREQUENCY 3 = 1mV P-P R L = 1kΩ TO V DD / 1-1 - -3-4 -5-6 -7 1E+3 1E+6 1E+6 1E+6 FREQUENCY (Hz) MAX965 toc11 GAIN (db) 15 1 5-5 -1-15 - SMALL-SIGNAL GAIN vs. FREQUENCY WITH VARIOUS C L = 1mV P-P R L = 1kΩ TO V DD / 1pF 1,pF 1pF 1pF -5 1E+3 1E+6 1E+6 1E+6 FREQUENCY (Hz) MAX965 toc1 4
SOT3 MAX965 μmax-ep, TDFN-EP MAX9651 (μmax-ep, TDFN-EP) 1 6 1 OUTA 4 4 GND 3 3 3 INA+ 4 INA- 5 7 8 V DD μ EP μ V REF 19V SUPPLY *C =.1μF *C1 = 1μF 19V SUPPLY V DD IN_+ 5 INB+ 6 INB- 7 OUTB 1, 5, 8 N.C. IN_- MAX965 GND OUT_ LCD VCOM LOAD R S = C LCD = _.Ω.1μF **V TO.V AT 5kHz *1μF and.1μf CAPACITORS AS CLOSE AS POSSIBLE TO THE PIN. **(R S = R GEN ) x C LCD x 6 < μs, WHERE R GEN = GENERATOR SOURCE IMPEDANCE. 5
± ± μ μ μ μ μ RESISTANCE (Ω). 1.8 1.6 1.4 STABLE 1. 1..8.6.4 UNSTABLE. 1-7 1-6 1-5 1-4 CAPACITANCE (F) V REF 16V SUPPLY *C =.1μF *C1 = 1μF 19V SUPPLY V DD IN_+ IN_- MAX965 GND OUT_ **R S *1μF and.1μf CAPACITORS AS CLOSE AS POSSIBLE TO THE PIN. **R S MAY BE NEEDED FOR SOME APPLICATIONS. TFT LCD TFT-LCD CAPACITANCE PROCESS: BiCMOS μ 6
OUTA GND INA+ MAX965 1 + 5 V DD 3 4 THIN SOT3 N.C. INA+ GND 1 3 4 + MAX965 μmax-ep (TDFN-EP) 8 7 6 5 N.C. V DD OUTA N.C. OUTA INB- INA- INA+ GND 1 3 4 + MAX9651 μmax-ep (TDFN-EP) 8 7 6 5 V DD OUTB INA- INA- INB+ 7
china.maxim-ic.com/packages 5 SOT3 Z5+ 1-113 9-41 8 μmax U8E+ 1-17 9-145 8 TDFN-EP T833+ 1-137 9-58 8
china.maxim-ic.com/packages 9
china.maxim-ic.com/packages 8L, μmax, EXP PAD.EPS 1-17 C 1 1 1
china.maxim-ic.com/packages 11
china.maxim-ic.com/packages COMMON DIMENSIONS SYMBOL MIN. MAX. A.7.8 D.9 3.1 E.9 3.1 A1..5 L..4 k.5 MIN. A. REF. PACKAGE VARIATIONS PKG. CODE N D E e JEDEC SPEC b [(N/)-1] x e T633-6 1.5±.1.3±.1.95 BSC MO9 / WEEA.4±.5 1.9 REF T833-8 1.5±.1.3±.1.65 BSC MO9 / WEEC.3±.5 1.95 REF T833-3 8 1.5±.1.3±.1.65 BSC MO9 / WEEC.3±.5 1.95 REF T133-1 1 1.5±.1.3±.1.5 BSC MO9 / WEED-3.5±.5. REF T133MK-1 T133- T1433-1 1 1.5±.1.3±.1.5 BSC MO9 / WEED-3 1 14 1.5±.1 1.7±.1.3±.1 T1433-14 1.7±.1.3±.1 T1433-3F 14 1.7±.1.3±.1.3±.1.5 BSC MO9 / WEED-3.5±.5. REF.4 BSC - - - -.5±.5. REF.±.5.4 REF.4 BSC - - - -.±.5.4 REF.4 BSC - - - -.±.5.4 REF 1
7/8 1 1/8 1,, 6, 1, 11 5/9 3 /1 1,, 5, 6 4 7/1, 4 Maxim Integrated Products, 1 San Gabriel Drive, Sunnyvale, CA 9486 48-737-76 13 1 Maxim Integrated Products