Fast Recovery Diodes (Stud Version) DO-9 (DO-05AB) PRMARY CHARACTERSTCS F(AV) Package DO-9 (DO-05AB) Circuit configuration Single FEATURES High power fast recovery diode series.0 μs to.0 μs recovery time High voltage ratings up to 0 V High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Compression bonded encapsulation Stud version EDEC DO-9 (DO-05AB) Maximum junction temperature 5 C Designed and qualified for industrial level Material categorization: for definitions of compliance please see /doc?999 TYPCAL APPLCATONS Snubber diode for GTO High voltage freewheeling diode Fast recovery rectifier applications MAOR RATNGS AND CHARACTERSTCS PARAMETER TEST CONDTONS VALUES UNTS F(AV) T C 85 C F(RMS) 3 Hz 9 A FSM Hz 530 Hz 5 t ka s Hz V RRM Range 00 to 0 V Range.0 to.0 μs t rr T 5 C T -0 to +5 ELECTRCAL SPECFCATONS VOLTAGE RATNGS TYPE NUMBER VS-SD03N/R..S0 VS-SD03N/R..S5 VS-SD03N/R..S0 VOLTAGE CODE V RRM, MAXMUM REPETTVE PEAK AND OFF-STATE VOLTAGE V V RSM, MAXMUM NON-REPETTVE PEAK VOLTAGE V 0 00 0 08 0 0 0 0 0 0 0 00 0 6 0 0 0 000 5 0 0 RRM MAXMUM T = 5 C ma 35 Revision: -an-8 Document Number: 93 ARE SUBECT TO SPECFC DSCLAMERS, SET FORTH AT /doc?
FORWARD CONDUCTON PARAMETER SYMBOL TEST CONDTONS VALUES UNTS Maximum average forward current at case temperature F(AV) conduction, half sine wave 85 C Maximum RMS current F(RMS) DC at 76 C case temperature 3 t = 0 ms No voltage 9 Maximum peak, one-cycle t = 8.3 ms reapplied 530 A non-repetitive forward current FSM t = 0 ms % V RRM 00 t = 8.3 ms reapplied Sinusoidal half wave, 00 t = 0 ms No voltage initial T = T maximum 5 Maximum t for fusing t t = 8.3 ms reapplied t = 0 ms % V RRM 88 ka s t = 8.3 ms reapplied 8 Maximum t for fusing t t = 0. to 0 ms, no voltage reapplied ka s (6.7 % x x Low level value of threshold voltage V F(AV) < < x F(AV) ), F(TO).00 T = T maximum V High level value of threshold voltage V F(TO) ( > x F(AV) ), T = T maximum.7 (6.7 % x x Low level value of forward slope resistance r F(AV) < < x F(AV) ), f.0 T = T maximum mw High level value of forward slope resistance r f ( > x F(AV) ), T = T maximum 6 Maximum forward voltage drop V pk = 68 A, T = 5 C, t p = 00 μs square pulse.65 V RECOVERY CHARACTERSTCS MAXMUM VALUE AT T = 5 C TEST CONDTONS TYPCAL VALUES AT T = 5 C CODE t rr at 5 % RRM (μs) pk SQUARE PULSE (A) d/dt (A/μs) V r (V) t rr at 5 % RRM (μs) Q rr (μc) S0.0. 5 33 S5.5 7 5-30.9 rr (A) dir dt t rr Q rr t S0.0 3. 07 6 RM(REC) THERMAL AND MECHANCAL SPECFCATONS PARAMETER SYMBOL TEST CONDTONS VALUES UNTS Maximum operating temperature range T -0 to 5 Maximum storage temperature range T Stg -0 to C Maximum thermal resistance, junction to case R thc DC operation 0.5 Maximum thermal resistance, case to heatsink R thcs Mounting surface, smooth, flat and greased 0.08 K/W Mounting torque ± 0 % Not-lubricated threads 3 Lubricated threads.5 Nm Approximate weight g Case style See dimensions (link at the end of datasheet) DO-9 (DO-05AB) Revision: -an-8 Document Number: 93 ARE SUBECT TO SPECFC DSCLAMERS, SET FORTH AT /doc?
R thc CONDUCTON CONDUCTON ANGLE SNUSODAL CONDUCTON RECTANGULAR CONDUCTON TEST CONDTONS UNTS 0.00 0.008 0.03 0.0 0.07 0.09 0.05 0.07 30 0.0 0.0 T = T maximum Note The table above shows the increment of thermal resistance R thc when devices operate at different conduction angles than DC K/W Maximum Allowable Case Temperature ( C) R (DC) = 0.5 K/W thc Conduction Angle 30 0 0 00 0 Average Forward Current (A) Maximum Average Forward Power Loss (W) 3 300 00 30 RMS Limit Conduction Angle T = 5 C 0 0 00 Average Forward Current (A) Fig. - Current Ratings Characteristics Fig. 3 - Forward Power Loss Characteristics Maximum Allowable Case Temperature ( C) R (DC) = 0.5 K/W thc Conduction Period 30 DC 0 00 300 3 Average Forward Current (A) Maximum Average Forward Power Loss (W) 5 0 DC 00 3 300 30 00 RMS Limit Conduction Period T = 5 C 0 0 00 300 3 Average Forward Current (A) Fig. - Current Ratings Characteristics Fig. - Forward Power Loss Characteristics Revision: -an-8 3 Document Number: 93 ARE SUBECT TO SPECFC DSCLAMERS, SET FORTH AT /doc?
Peak Half Sine Wave Forward Current (A) 00 0 000 30 3000 0 000 0 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. nitial T = 5 C @ Hz 0.0083 s @ Hz 0.0 s 0 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current nstantaneous Forward Current (A) 0 000 0 T = 5 C T = 5 C 0.5.5.5 6.5 nstantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Peak Half Sine Wave Forward Current (A) 50 00 0 000 30 3000 0 000 0 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. nitial T = 5 C No Voltage Reapplied Rated V Reapplied RRM 0 0.0 0. Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Transient Thermal mpedance Z thc (K/W) Steady State Value: R thc = 0.5 K/W (DC Operation) 0. 0.0 0.00 0.00 0.0 0. 0 Square Wave Pulse Duration (s) Fig. 8 - Thermal mpedance Z thc Characteristic V FP T = 5 C Forward Recovery (V) 0 0 T = 5 C SD03N/R..S0 Series 0 0 00 00 0 0 0 0 00 0 0 000 Rate Off Fall Of Forward Current di/dt (A/μs) Fig. 9 - Typical Forward Recovery Characteristics Revision: -an-8 Document Number: 93 ARE SUBECT TO SPECFC DSCLAMERS, SET FORTH AT /doc?
Maximum Reverse Recovery Time - t rr (μs).8.6...8.6 0 SD03N/R..S0 Series T = 5 C, V R = 30 V = 7 A Fig. 0 - Recovery Time Characteristics Maximum Reverse Recovery Time - t rr (μs) 3.6 3..8..6 0 SD03N/R..S5 Series T = 5 C, V R = 30 V = 7 A Fig. 3 - Recovery Time Characteristics Maximum Reverse Recovery Charge - Q rr (μc) 0 0 30 0 = 7 A SD03N/R..S0 Series T = 5 C, V R = 30 V 0 0 0 0 Maximum Reverse Recovery Charge - Q rr (μc) = 7 A 0 SD03N/R..S5 Series T = 5 C, V R = 30 V 0 0 30 0 Fig. - Recovery Charge Characteristics Fig. - Recovery Charge Characteristics Maximum Reverse Recovery Current - rr (A) 0 30 = 7 A SD03N/R..S0 Series T = 5 C, V R = 30 V 0 0 30 0 Maximum Reverse Recovery Current - rr (A) = 7 A 0 30 SD03N/R..S5 Series 0 T = 5 C, V R = 30 V 0 0 0 30 0 Fig. - Recovery Current Characteristics Fig. 5 - Recovery Current Characteristics Revision: -an-8 5 Document Number: 93 ARE SUBECT TO SPECFC DSCLAMERS, SET FORTH AT /doc?
Maximum Reverse Recovery Time - trr (μs) 3.6 3. 3..8.6 3. 0 SD03N/R..S0 Series T = 5 C, V R = 30 V = 7 A Maximum Reverse Recovery Charge - Q rr (μc) 300 00 = 7 A SD03N/R..S0 Series T = 5 C, V R = 30 V 0 0 30 0 Fig. 6 - Recovery Time Characteristics Fig. 7 - Recovery Charge Characteristics Maximum Reverse Recovery Current - rr (A) 0 30 = 7 A SD03N/R..S0 Series T = 5 C, V R = 30 V 0 0 0 30 0 Fig. 8 - Recovery Current Characteristics Peak Forward Current (A) E E3 E 0.0 0.0 0.0 0. 0. SD03N/R..S0 Series Sinusoidal Pulse T = 5 C, V RRM = V dv/dt = 0 V/μs E E E E3 E 0 joules per pulse 0 Fig. 9 - Maximum Total Energy Loss Per Pulse Characteristics t p 0.06 0. 0. E E E3 E 0 SD03N/R..S0 Series Trapezoidal Pulse T = 5 C, V RRM = V dv/dt = 0 V/μs, di/dt = A/μs 0 joules per pulse Revision: -an-8 6 Document Number: 93 ARE SUBECT TO SPECFC DSCLAMERS, SET FORTH AT /doc?
Peak Forward Current (A) E E3 E 0. 0. 0.0 0.0 0.0 0 0 joules per pulse 0. 0. 0 joules per pulse 0 SD03N/R..S5 Series Sinusoidal Pulse tp T = 5 C, V RRM = V dv/dt = 0 V/μs E E E E3 E Fig. 0 - Maximum Total Energy Loss Per Pulse Characteristics SD03N/R..S5 Series Trapezoidal Pulse tp T = 5 C, V RRM = V dv/dt = 0 V/μs, di/dt = A/μs E E E3 E Peak Forward Current (A) E E3 E tp SD03N/R..S0 Series Sinusoidal Pulse T = 5 C, V RRM = 7 V dv/dt = 0 V/μs E E E E3 E 0. 0. 0.0 0.0 0.0 0 0 joules per pulse Fig. - Maximum Total Energy Loss Per Pulse Characteristics tp 0. E E E3 E 0 SD03N/R..S Series Trapezoidal Pulse T = 5 C, V RRM = 7 V dv/dt = 0 V/μs, di/dt = A/μs 0 joules per pulse Revision: -an-8 7 Document Number: 93 ARE SUBECT TO SPECFC DSCLAMERS, SET FORTH AT /doc?
ORDERNG NFORMATON TABLE Device code VS- SD 0 3 R 5 S0 P B C 3 5 6 7 8 9 0 - product - Diode 3 - Essential part number - 3 = fast recovery 5 - N = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) 6 - Voltage code x = V RRM (see Voltage Ratings table) 7 - t rr code (see Recovery Characteristics table) 8 - P = stud base DO-9 (DO-05AB) 3/" 6UNF-A M = stud base DO-9 (DO-05AB) M6 x.5 9-7 B = flag top terminals (for cathode / anode leads) S = isolated lead with silicon sleeve (red = reverse polarity; blue = normal polarity) None = not isolated lead 0 - C = ceramic housing (over 0 V) V = glass-metal seal (only up to 0 V) Dimensions LNKS TO RELATED DOCUMENTS /doc?9530 Revision: -an-8 8 Document Number: 93 ARE SUBECT TO SPECFC DSCLAMERS, SET FORTH AT /doc?
Outline Dimensions DO-05AB (DO-9) DMENSONS in millimeters (inches) Ceramic housing 9 (0.75) MAX. (0.6) MAX. 9.5 (0.37) MN. 39 (.53) MAX. DA. 8.5 (0.33) NOM. C.S. 35 mm (0.05 s.i.) 0 (8.7) ± 0 (0.39) DA. 7.5 (.08) MAX. 8 (3.3) MN. SW 3 6 (0.63) MAX. (0.8) MAX. 3/"-6UNF-A* *For metric device: M6 x.5 contact factory Document Number: 9530 For technical questions, contact: indmodules@vishay.com Revision: 09-Apr-08
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