DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4

FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1 base 2 emitter 3 collector DESCRIPTION DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846, BC847 and BC848. MARKING TYPE NUMBER MARKING CODE BC856 3D* BC856A 3A* BC856B 3B* BC857 3H* BC857A 3E* BC857B 3F* BC857C 3G* BC858B 3K* Top view 1 3 3 1 2 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. Note 1. * = -: made in Hong Kong. * = t: made in Malaysia. 22 Feb 4 2

LIMITING VALUES In accordance with the Absolute Maximum System (IEC 6134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter BC856 8 V BC857 5 V BC858 3 V V CEO collector-emitter voltage open base BC856 65 V BC857 45 V BC858 3 V V EBO emitter-base voltage open collector 5 V I C collector current (DC) 1 ma I CM peak collector current 2 ma I BM peak base current 2 ma P tot total power dissipation T amb 25 C; note 1 25 mw T stg storage temperature 65 +15 C T j junction temperature 15 C T amb operating ambient temperature 65 +15 C Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to in free air; note 1 5 K/W ambient R th j-a Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. 22 Feb 4 3

CHARACTERISTICS T amb =25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector-base cut-off current V CB = 3 V; I E = 1 15 na V CB = 3 V; I E =; 4 µa T j = 15 C I EBO emitter-base cut-off current V EB = 5 V; I C = 1 na h FE DC current gain I C = 2 ma; V CE = 5 V BC856 125 475 BC857 125 8 BC856A; BC857A 125 25 BC856B; BC857B; BC858B 22 475 BC857C 42 8 V CEsat collector-emitter saturation voltage I C = 1 ma; I B =.5 ma 75 3 mv I C = 1 ma; I B = 5 ma; 25 65 mv note 1 V BEsat base-emitter saturation voltage I C = 1 ma; I B =.5 ma 7 mv I C = 1 ma; I B = 5 ma; 85 mv note 1 V BE base-emitter voltage I C = 2 ma; V CE = 5 V 6 65 75 mv I C = 1 ma; V CE = 5 V 82 mv C c collector capacitance V CB = 1 V; I E =I e =; 4.5 pf f = 1 MHz f T transition frequency V CE = 5 V; I C = 1 ma; 1 MHz f = 1 MHz F noise figure I C = 2 µa; V CE = 5 V; R S =2kΩ; f = 1 khz; B = 2 Hz 2 1 db Note 1. Pulse test: t p 3 µs; δ.2. 22 Feb 4 4

5 h FE 4 MGT711 12 V BE 1 MGT712 3 8 6 2 4 1 2 1 2 1 1 1 1 1 2 1 3 1 2 1 1 1 1 1 2 1 3 BC857A; V CE = 5 V. T amb = 15 C. T amb =25 C. T amb = 55 C. BC857A; V CE = 5 V. T amb = 55 C. T amb =25 C. T amb = 15 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 1 4 V CEsat MGT713 12 V BEsat 1 MGT714 1 3 8 6 1 2 4 2 1 1 1 1 1 1 2 1 3 1 1 1 1 1 2 1 3 BC857A; I C /I B = 2. T amb = 15 C. T amb =25 C. T amb = 55 C. BC857A; I C /I B = 2. T amb = 55 C. T amb =25 C. T amb = 15 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 22 Feb 4 5

1 h FE 8 MGT715 12 V BE 1 MGT716 6 8 6 4 4 2 2 1 2 1 1 1 1 1 2 1 3 1 2 1 1 1 1 1 2 1 3 BC857B; V CE = 5 V. T amb = 15 C. T amb =25 C. T amb = 55 C. BC857B; V CE = 5 V. T amb = 55 C. T amb =25 C. T amb = 15 C. Fig.6 DC current gain as a function of collector current; typical values. Fig.7 Base-emitter voltage as a function of collector current; typical values. 1 4 V CEsat MGT717 12 V BEsat 1 MGT718 1 3 8 6 1 2 4 2 1 1 1 1 1 1 2 1 3 1 1 1 1 1 2 1 3 BC857B; I C /I B = 2. T amb = 15 C. T amb =25 C. T amb = 55 C. BC857B; I C /I B = 2. T amb = 55 C. T amb =25 C. T amb = 15 C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. 22 Feb 4 6

1 h FE 8 MGT719 12 V BE 1 MGT72 6 8 6 4 4 2 2 1 2 1 1 1 1 1 2 1 3 1 1 1 1 1 2 1 3 BC857C; V CE = 5 V. T amb = 15 C. T amb =25 C. T amb = 55 C. Fig.1 DC current gain as a function of collector current; typical values. BC857C; V CE = 5 V. T amb = 55 C. T amb =25 C. T amb = 15 C. Fig.11 Base-emitter voltage as a function of collector current; typical values. 1 4 V CEsat MGT721 12 V BEsat 1 MGT722 1 3 1 2 8 6 4 2 1 1 1 1 1 1 2 1 3 1 1 1 1 1 2 1 3 BC857C; I C /I B = 2. T amb = 15 C. T amb =25 C. T amb = 55 C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. BC857C; I C /I B = 2. T amb = 55 C. T amb =25 C. T amb = 15 C. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 22 Feb 4 7

PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X H E v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 max. 1.1 mm.1.9 b p c D E e e 1 H E L p Q v w.48.38.15.9 3. 2.8 1.4 1.2 1.9.95 2.5 2.1.45.15.55.45.2.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ TO-236AB EUROPEAN PROJECTION ISSUE DATE 97-2-28 99-9-13 22 Feb 4 8

DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-65A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 6134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify for any damages resulting from such application. Right to make changes reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 22 Feb 4 9

NOTES 22 Feb 4 1

NOTES 22 Feb 4 11

a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 4 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. Koninklijke Philips Electronics N.V. 22 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/4/pp12 Date of release: 22 Feb 4 Document order number: 9397 75 9167

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