DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25
FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum 4 A High efficiency leading to less heat generation. APPLICATIONS Medium power peripheral drivers; e.g. fan, motor Strobe flash units for DSC and mobile phones Inverter applications; e.g. TFT displays Power switch for LAN and ADSL systems Medium power DC-to-DC conversion Battery chargers. DESCRIPTION NPN low V CEsat transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5480X. MARKING TYPE NUMBER MARKING CODE () *Y Note. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT V CEO collector-emitter voltage 80 V I C collector current (DC) 4 A I CM peak collector current 0 A R CEsat equivalent on-resistance 54 mω PINNING PIN emitter 2 collector 3 base 3 2 DESCRIPTION 3 2 sym042 Fig. Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 2004 Oct 25 2
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 6034). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 80 V V CEO collector-emitter voltage open base 80 V V EBO emitter-base voltage open collector 5 V I C collector current (DC) note 4 4 A I CRM repetitive peak collector current t p 0 ms; δ 0. 6 A I CM peak collector current t = ms or limited by T j(max) 0 A I B base current (DC) A I BM peak base current t 300 µs 2 A P tot total power dissipation T amb 25 C notes and 2 2.5 W note 2 550 mw note 3 W note 4.4 W note 5.6 W T j junction temperature 50 C T amb ambient temperature 65 +50 C T stg storage temperature 65 +50 C Notes. Operated under pulsed conditions; pulse width t p 0 ms; duty cycle δ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector cm 2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm 2. 5. Device mounted on a 7 cm 2 ceramic printed-circuit board, cm 2 single-sided copper and tin-plated. For other mounting conditions, see Thermal considerations for SOT89 in the General Part of associated Handbook. 2004 Oct 25 3
600 00aaa229 P tot (mw) () 200 800 400 0 50 0 50 00 50 200 T amb ( C) () FR4 PCB; 6 cm 2 mounting pad for collector. FR4 PCB; cm 2 mounting pad for collector. FR4; standard footprint. Fig.2 Power derating curves. 2004 Oct 25 4
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th(j-a) R th(j-s) thermal resistance from junction to ambient thermal resistance from junction to soldering point in free air notes and 2 50 K/W note 2 225 K/W note 3 25 K/W note 4 90 K/W note 5 80 K/W 6 K/W Notes. Operated under pulsed conditions; pulse width t p 0 ms; duty cycle δ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector cm 2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm 2. 5. Device mounted on a 7 cm 2 ceramic printed-circuit board, cm 2 single-sided copper and tin-plated. For other mounting conditions, see Thermal considerations for SOT89 in the General Part of associated Handbook. 0 3 006aaa232 Z th (K/W) 0 2 0 () (4) (5) (6) (7) (8) (9) (0) 0 0 5 0 4 0 3 0 2 0 0 0 2 0 3 t p (s) Mounted on FR4 printed-circuit board; standard footprint. () δ =. δ = 0.75. δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.0. (0) δ =0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Oct 25 5
0 3 006aaa233 Z th (K/W) 0 2 0 () (5) (6) (7) (8) (9) (0) (4) 0 0 5 0 4 0 3 0 2 0 0 0 2 0 3 t p (s) Mounted on FR4 printed-circuit board; mounting pad for collector cm 2. () δ =. δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.0. δ = 0.75. (4) δ = 0.33. (6) δ = 0.. (8) δ = 0.02. (0) δ =0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 0 3 006aaa234 Z th (K/W) 0 2 0 () (5) (6) (7) (8) (9) (0) (4) 0 0 5 0 4 0 3 0 2 0 0 0 2 0 3 t p (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm 2. () δ =. δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.0. δ = 0.75. (4) δ = 0.33. (6) δ = 0.. (8) δ = 0.02. (0) δ =0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Oct 25 6
CHARACTERISTICS T amb =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector-base cut-off current V CB = 80 V; I E =0A 00 na V CB = 80 V; I E =0A; 50 µa T j = 50 C I CES collector-emitter cut-off current V CE = 80 V; V BE =0V 00 na I EBO emitter-base cut-off current V EB =5V; I C =0A 00 na h FE DC current gain V CE =2V; I C = 0.5 A 250 400 V CE = 2 V; I C = A; note 250 400 V CE = 2 V; I C = 2 A; note 75 270 V CE =2V; I C = 4 A; note 80 40 V CEsat collector-emitter saturation I C = 0.5 A; I B =50mA 25 40 mv voltage I C = A; I B =50mA 55 80 mv I C = 2 A; I B =40mA 0 60 mv I C = 4 A; I B = 200 ma; 70 230 mv note I C = 5 A; I B = 500 ma; 200 270 mv note R CEsat equivalent on-resistance I C = 5 A; I B = 500 ma; 40 54 mω note V BEsat base-emitter saturation voltage I C = 0.5 A; I B =50mA 0.78 0.85 V I C = A; I B =50mA 0.79 0.9 V I C = A; I B = 00 ma; 0.82 0.95 V note I C = 4 A; I B = 400 ma; 0.95.05 V note V BEon base-emitter turn-on voltage I C = 2 A; V CE =2V 0.78 0.85 V f T transition frequency I C = 00 ma; V CE =0V; 20 50 MHz f = 00 MHz C c collector capacitance I E =i e = 0 A; V CB =0V; f=mhz 35 50 pf Note. Pulse test: t p 300 µs; δ 0.02. 2004 Oct 25 7
000 00aaa734.2 00aab057 h FE 800 () V BE (V) 600 0.8 () 400 0.4 200 0 0 0 0 2 0 3 0 4 V CE =2V. () T amb = 00 C. T amb =25 C. T amb = 55 C. 0 0-0 0 2 0 3 0 4 V CE =2V. () T amb = 55 C. T amb =25 C. T amb = 00 C. Fig.6 DC current gain as a function of collector current; typical values. Fig.7 Base-emitter voltage as a function of collector current; typical values. 0 3 00aaa737 00aaab059 V CEsat (mv) V CEsat (V) 0 2 () 0 - () 0 0-2 0 0 0 2 0 3 0 4 () I C /I B = 00. I C /I B = 50. I C /I B = 0. 0-3 0-0 0 2 0 3 0 4 I C /I B = 20. () T amb = 00 C. T amb =25 C. T amb = 55 C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Oct 25 8
.2 00aaa736 0 3 00aaa738 V BEsat (V) R CEsat (Ω) 0 2 0.8 () 0 0.4 0 () 0 0 0 0 2 0 3 0 4 I C /I B = 20. () T amb = 55 C. T amb =25 C. T amb = 00 C. Fig.0 Base-emitter saturation voltage as a function of collector current; typical values. 0 2 0 0 0 2 0 3 0 4 I C /I B = 20. () T amb = 00 C. T amb =25 C. T amb = 55 C. Fig. Equivalent on-resistance as a function of collector current; typical values. 0 I C (A) 8 6 (4) () (5) (6) (7) (8) 00aaa733.2 V BEon (V) 0.8 00aab32 (9) 4 (0) 0.4 2 0 0 0.4 0.8.2.6 2 V CE (V) 0 0 0 0 2 0 3 0 4 () I B = 90 ma. I B = 7 ma. I B = 52 ma. (4) I B = 33 ma. (5) I B = 4 ma. (6) I B = 95 ma. (7) I B = 76 ma. (8) I B = 57 ma. (9) I B = 38 ma. (0) I B = 9 ma. T amb =25 C. Fig.2 Collector current as a function of collector-emitter voltage; typical values. Fig.3 Base-emitter turn-on voltage as a function of collector current; typical values. 2004 Oct 25 9
Reference mounting conditions 32 mm handbook, halfpage 32 mm 0 mm 40 mm 2.5 mm mm 3 mm 40 mm 0 mm 2.5 mm 0.5 mm mm 5 mm 2.5 mm 0.5 mm mm 5 mm 3.96 mm.6 mm 00aaa234 3.96 mm.6 mm MLE322 Fig.4 FR4, standard footprint. Fig.5 FR4, mounting pad for collector cm 2. 32 mm 30 mm 40 mm 20 mm 2.5 mm 0.5 mm 3.96 mm mm.6 mm 00aaa235 5 mm Fig.6 FR4, mounting pad for collector 6 cm 2. 2004 Oct 25 0
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 D B A b p3 E H E 2 3 L p b p2 c w M b p e e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b p b p2 b p3 c D E e e H E L p w mm.6.4 0.48 0.35 0.53 0.40.8.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0.5 4.25 3.75.2 0.8 0.3 OUTLINE VERSION REFERENCES IEC JEDEC JEITA SOT89 TO-243 SC-62 EUROPEAN PROJECTION ISSUE DATE 99-09-3 04-08-03 2004 Oct 25
DATA SHEET STATUS LEVEL DATA SHEET STATUS () PRODUCT STATUS DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Notes. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 6034). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify for any damages resulting from such application. Right to make changes reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Oct 25 2
a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +3 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp3 Date of release: 2004 Oct 25 Document order number: 9397 750 3924