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Transcription:

DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 99

FEATURES PINNING High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT33 envelope. PIN DESCRIPTION Code: V base emitter 3 collector handbook, columns 3 DESCRIPTION NPN transistor in a plastic SOT33 envelope. It is designed for wideband applications such as satellite TV tuners and RF portable communications equipment up to GHz. Top view MBC87 Fig. SOT33. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base V I C DC collector current ma P tot total power dissipation up to T s =8 C; note 3 mw h FE DC current gain I C = ma; V CE = V; T j = C 6 f T transition frequency I C = ma; V CE = 8 V; f = GHz; 8 GHz T amb = C G UM maximum unilateral power gain I c = ma; V CE = 8 V; f = GHz; 3 db T amb = C F noise figure I c = ma; V CE = 8 V; f = GHz.3 db LIMITING VALUES In accordance with the Absolute Maximum System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base V V EBO emitter-base voltage open collector. V I C DC collector current ma P tot total power dissipation up to T s =8 C; note 3 mw T stg storage temperature 6 C T j junction temperature 7 C Note. T s is the temperature at the soldering point of the collector tab. September 99

THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE thermal resistance from junction to up to T s =8 C; note 9 K/W soldering point R th j-s Note. T s is the temperature at the soldering point of the collector tab. CHARACTERISTICS T j = C, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-off current I E = ; V CB = V na h FE DC current gain I C = ma; V CE = V 6 C c collector capacitance I E =i e = ; V CB = 8 V; f = MHz.7 pf C e emitter capacitance I C =i c = ; V EB =. V; f = MHz.3 pf C re feedback capacitance I C = ; V CB = 8 V; f = MHz. pf f T transition frequency I C = ma; V CE = 8 V; f = GHz; T amb = C 8 GHz G UM maximum unilateral power gain (note ) I C = ma; V CE = 8 V; f = GHz T amb = C I C = ma; V CE = 8 V; f = GHz; T amb = C F noise figure Γ s = Γ opt ;I C = ma; V CE =8 V; f=ghz Γ s = Γ opt ;I C = ma; V CE =8 V; f=ghz Γ s = Γ opt ;I C = ma; V CE =8 V; f=ghz I C = ma; V CE =8 V; f = GHz; Z s =6Ω Γ s = Γ opt ;I C = ma; V CE =8 V; f=ghz I C = ma; V CE =8 V; f = GHz; Z s =6Ω Note. G UM is the maximum unilateral power gain, assuming S is zero and G UM S = log ------------------------------------------------------------- db. S S 3 db 8 db.3 db db. db. db.7 db 3 db September 99 3

handbook, 4 halfpage P tot (mw) 3 MRC4- h FE MBB3 8 4 T ( o s C) 4 I C (ma) 6 V CE = V; T j = C. Fig. Power derating curve. Fig.3 DC current gain as a function of collector current..8 C re (pf).6 MRC39 f T (GHz) 8 MBB33 6.4 4. 4 8 V CB (V) 3 4 I C (ma) I C = ; f = MHz. V CE = 8 V; f = GHz; T amb = C. Fig.4 Feedback capacitance as a function of collector-base voltage. Fig. Transition frequency as a function of collector current. September 99 4

In Figs 6 to 9, G UM = maximum unilateral power gain; MSG = maximum stable gain; G max = maximum available gain. handbook, halfpage gain (db) MRC4 MSG Gmax gain (db) 4 GUM MRC4 GUM 3 MSG Gmax 3 3 I C (ma) V CE = 8 V; f = GHz; T amb = C. Fig.6 Gain as a function of collector current. f (GHz) I C = ma; V CE = 8 V; T amb = C. Fig.7 Gain as a function of frequency. gain (db) 4 GUM MRC4 gain (db) 4 MRC43 GUM 3 MSG 3 MSG G max G max f (GHz) f (GHz) I C = ma; V CE = 8 V; T amb = C. Fig.8 Gain as a function of frequency. I C = 3 ma; V CE = 8 V; T amb = C. Fig.9 Gain as a function of frequency. September 99

4 F (db) MRC44 3 I C (ma) V CE = 8 V; f = GHz. Fig. Minimum noise figure as a function of collector current. handbook, full pagewidth 9. 3. 4.8.6. F min =. db.4 opt. 8.. F = db F =. db. F = 3 db 3. 4 MRC46. I C = ma; V CE = 8 V; f = GHz; Z o =Ω. 9 Fig. Noise circle. September 99 6

handbook, full pagewidth 9. 3. 4.8.6..4 3 GHz. 8.. 4 MHz. I C = ma; V CE = 8 V; Z o =Ω.. 3 4 MRA47 9 Fig. Common emitter input reflection coefficient (S ).. handbook, full pagewidth 9 3 4 4 MHz 8 4 3 3 GHz 3 4 9 MRC48 I C = ma; V CE = 8 V. Fig.3 Common emitter forward transmission coefficient (S ). September 99 7

handbook, full pagewidth 9 3 4 3 GHz 8..4.3.. 4 MHz 3 4 9 MRC49 I C = ma; V CE = 8 V. Fig.4 Common emitter reverse transmission coefficient (S ). handbook, full pagewidth 9. 3. 4.8.6..4. 8.. 4 MHz. 3 GHz 3. 4 MRC. 9 I C = ma; V CE = 8 V; Z o =Ω. Fig. Common emitter output reflection coefficient (S ). September 99 8

PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT33 D B E A X y H E v M A 3 Q A A c e bp w M B Lp e detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT A A max. mm..8 b p c D E e e H E L p Q v w.4.3....8.3..3.6...4..3.3.. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT33 SC-7 97--8 September 99 9

DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 99