Two Dimensional Graphene/SnS 2 Hybrids with Superior Rate Capability for Lithium ion Storage

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Electronic Supplementary Information Two Dimensional Graphene/SnS 2 Hybrids with Superior Rate Capability for Lithium ion Storage Bin Luo, a Yan Fang, a Bin Wang, a Jisheng Zhou, b Huaihe Song, b and Linjie Zhi* a a National Center for Nanoscience and Technology, Zhongguancun, Beiyitiao No.11, 100190, Beijing, P.R. China. Fax: +86 10 82545578; Tel: +86 10 82545578; E-mail: zhilj@nanoctr.cn b State key laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, 100029, Beijing, P.R. China. Experimental details: Material Synthesis: Graphene oxide (GO) was synthesized from natural graphite (300 μm, Qingdao Graphite Company) by a modified Hummers method [1]. Graphene supported SnO 2 nanoparticles (G-SnO 2 ) were prepared by a controllable hydrolyzation process of tin salts in a GO containing ethylene glycol (EG)-water solution. In a typical experiment, as-synthesized graphene oxide (50 mg) was firstly suspended in a 100 ml of mixture of EG and water (10 ml of water contained) that was hosted in a round-bottom flask, and then ultrasonically treated for 1 h, forming a brown dispersion. Then 0.5 g of SnCl 2 2H 2 O (dissolved in 10 ml of EG) was added to the obtained GO solution. After magnetic stirring for 20 min, the solution was heated to 120 and refluxed for 2 h with constant stirring under atmospheric pressure. After filtration and desiccation, the resultant black solid product was placed in a horizontal quartz tubular reactor, and heated to 500 at 10 min -1 in Ar (99.999 %) atmosphere with a flow rate of 200 sccm. To improve the crystallinity of SnO 2 in G-SnO 2, the product was firstly annealed at 500 for 2 h in Ar atmosphere. Subsequently, gas mixture of H 2 S and Ar (Volume ratio: 1:19) were introduced in turn with a flow rate of 200 sccm when the furnace was cooled down to 300, and kept these conditions for 2 hours. Finally the system was cooled down to room temperature in Ar atmosphere. To investigate the effect of the pre-annealing treatment and flow rate of H 2 S/Ar gas on the morphologies of SnS 2, the 1

same process was used except adjusting the corresponding parameters. For comparison, bare SnS 2 was prepared by the same procedure but without the presence of GO in the first step. Material Characterization: X-ray diffraction (XRD) with Cu Kα radiation (Rigaku D/max-2500B2+/PCX system) was used to determine the phase composition and the crystallinity. The morphology and microstructure of the samples were investigated by FE-SEM (Hitachi S4800), FE-TEM (FEI Tecnai G2 20 ST), and TGA (Perkin Elmer, Diamond TG) measurements. Nitrogen sorption isotherms and BET surface area were measured at 77 K with a ASAP 2020 physisorption analyzer (USA). The Raman spectra were obtained on a Renishaw Micro-Raman Spectroscopy System with excitation from an argon ion laser (514 nm). Fourier-trans-form infrared (FT-IR) spectra were recorded by a Perkin-Elmer Spectrum One FTIR Spectrometer. Electrochemical cycling tests were performed with coin-type half-cells (2032 size). The working electrode was made from the G-SnS 2 active material, super P carbon black, and a polyvinylidene fluoride (PVDF) binder in a weight ratio of 80:10:10 on a copper foil. The mass of the active material in each half-cell is about 2-3 mg. The electrolyte was 1M LiPF 6 with 1:1 ethylene carbonate: diethylene carbonate (EC: DEC), and the counter and reference electrodes were made from lithium foil. The cycle-life of the cells was tested at different rates within a fixed voltage window of 1.3 V-5 mv. The rate capability was evaluated by varying the discharge rate from 100 ma g -1 to 6400 ma g -1. Cyclic voltammetry was performed to examine the cathodic reaction (reduction) and the anodic reaction (oxidation) in the voltage range of 2.5-0 V (versus Li/Li + ), at a sweep rate of 0.1 mv s 1. 2

Figure S1. FT-IR spectra for graphene oxide (GO), graphene supported SnO 2 nanoparticles (G-SnO 2 ) and graphene supported SnS 2 nanoplates (G-SnS 2 ). Figure S1 shows FT-IR spectra of graphene oxide (GO), graphene supported SnO 2 nanoparticles (G-SnO 2 ) and graphene supported SnS 2 nanoplates (G-SnS 2 ). The two bands of GO appearing at 1050 cm -1 and 1720 cm -1 are due to the epoxide and carboxyl functional moieties, respectively. This result clearly reveals that functional groups are introduced into carbon frameworks upon oxidation. However, in case of G-SnO 2, epoxide and carboxylate functional groups almost disappear, indicating that GO has been reduced by the solution process. The broad band around 670 cm -1 is associated with the anti-symmetric O-Sn-O stretching mode, clarifying that SnO 2 particles exist within the graphene-based matrices. After the heat treatment in H 2 S/Ar, disappearing of the broad band around 670 cm -1 confirmed the totally conversion of SnO 2 nanoparticles to SnS 2 nanoplates. 3

Figure S2. Energy-dispersive X-ray (EDX) spectrum of G-SnS 2. 4

Figure S3. Comparison of XRD patterns of (a) G-SnS 2, (b) G-SnO 2 -SnS 2 (sample collected during the second step), (c) Annealed G-SnO 2, (d) Unannealed G-SnO 2, and (e) GO. 5

Figure S4. TEM images of (a, b) unannealed G-SnO2, and (c, d) annealed G-SnO2. Figure S5. TEM images of G-SnS2-SnO2 (samples collected after heat treatment in H2S/Ar for 1 hour) 6

Figure S6. Cyclic voltammograms for G-SnS 2 -S electrode, cycled between 0.05V and 2.5V at a scan rate of 0.01mV/s. Figure S6 shows the Cyclic Voltammograms (CV) for the first ten cycles at a scan rate of 0.01mVs -1 in the potential window of 0.05V-2.5V. Specifically, several reduction peaks are observed in the first cathodic scan. Two broader peaks were present at about 1.25 V and 1.1 V in the first potential sweeping process. The cathodic peak at 1.25 V, observed during the first sweep, was assigned to the decomposition of the SnS 2 into metallic tin and Li 2 S, and the formation of solid electrolyte interface (SEI), which should be responsible for the first irreversible capacity loss. The third dominant peak between 0.6 and 0 V is known to arise from the formation of Li x Sn alloys. The additional peaks at 1.6 and 1.9V were attributed to the lithium intercalation of the SnS 2 layers without phase decomposition, which were also partly responsible for the high initial discharge capacities. 7

Figure S7. Thermal analysis (by TGA and DTA) of as-prepared G-SnS 2 -M hybids. The SnS 2 content estimated from the thermal analysis was ca. 95.0 wt % (Note: SnS 2 had been oxidized into SnO 2 ). The analysis was taken in air using a heating rate of 10 min -1. The weight loss from room temperature to 200 was due to the removal of physisorbed and chemisorbed water. 8

Figure S8. Nitrogen adsorption-desorption isotherms and pore-size distribution of as-prepared G-SnS 2 -L (a, b), G-SnS 2 -M (c, d) and G-SnS 2 -S (e, f), respectively. Table S1. Size distribution of SnS 2 nanoplates of three typical G-SnS 2 samples obtained at different Experimental conditions. Experimental conditions Size distribution of SnS 2 nanoplates Samples Pre-annealing Flow rate of H 2 S/Ar Calculated Diameter treatment of G-SnO 2 gas mixture thickness G-SnS 2 -S with 400sccm ~100nm ~3.7nm G-SnS 2 -M with 200sccm ~200nm ~6.9nm G-SnS 2 -L without 200sccm ~500nm ~11.4nm 9

Table S2. BET surface area, BJH adsorption cumulative volume of pores, and BJH adsorption average pore width of as-prepared G-SnS 2 samples. Samples BJH adsorption cumulative BJH adsorption average BET surface area volume of pores pore width m 2 g -1 cm 3 g -1 nm G-SnS 2 -S 35.3 0.060 6.1 G-SnS 2 -M 47.2 0.259 18.6 G-SnS 2 -L 84.1 0.562 22.5 The isotherm for G-SnS 2 -L and G-SnS 2 -M is characteristic of a type IV with a type H3 hysteresis loop, revealing that the material is composed of aggregates (loose assemblages) of sheet-like particles forming slit-like pores. Meanwhile, the isotherm for G-SnS 2 -S with a Type H4 loops feature can be attributed to adsorption-desorption in narrow slit-like pores, which is in corresponding with our microscopy findings. Supporting references [1] W. S. Hummers and R. E. Offeman, J. Am. Chem. Soc. 1958, 80, 1339-1339. 10