DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2

FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High collector current gain h FE at high I C High efficiency leading to reduced heat generation Reduced printed-circuit board area requirements. APPLICATIONS Power management: Complementary MOSFET driver Dual supply line switching. Peripheral driver: Half and full bridge motor drivers Multi-phase stepper motor driver. DESCRIPTION NPN/PNP low V CEsat transistor pair in a SOT457 (SC-74) plastic package. QUICK REFERENCE DATA MAX. SYMBOL PARAMETER NPN PNP UNIT V CEO emitter-collector 4 4 V voltage I C collector current (DC) 1.35 1.1 A I CRP repetitive peak 2 2 A collector current I CM peak collector current 3 3 A R CEsat equivalent on-resistance 2 26 mω PINNING PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 MARKING 6 5 4 6 5 4 TYPE NUMBER MARKING CODE PBSS424DPN M3 TR1 TR2 1 2 3 Top view MAM445 1 2 3 Fig.1 Simplified outline SOT457 (SC-74) and symbol. 23 Feb 2 2

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 6134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity V CBO collector-base voltage open emitter 4 V V CEO collector-emitter voltage open base 4 V V EBO emitter-base voltage open collector 5 V I C collector current (DC) NPN 1.35 A PNP 1.1 A I CRP repetitive peak collector current note 1 2 A I CM peak collector current single peak 3 A I B base current (DC) 3 ma I BM peak base current 1 A P tot total power dissipation T amb 25 C; note 2 37 mw T amb 25 C; note 3 31 mw T amb 25 C; note 1 1.1 W T stg storage temperature 65 +15 C T j junction temperature 15 C T amb operating ambient temperature 65 +15 C Per device P tot total power dissipation T amb 25 C; note 2 6 mw Notes 1. Operated under pulsed conditions: duty cycle δ 2%; pulse width tp 1 ms; mounting pad for collector standard footprint. 2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm 2. 3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Per transistor R th j-a thermal resistance from junction to ambient in free air; note 1 34 K/W in free air; note 2 11 K/W Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm 2. 2. Operated under pulsed conditions: pulse width t p 1 ms; duty cycle δ.2; mounting pad for collector standard footprint. 23 Feb 2 3

CHARACTERISTICS T amb =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity I CBO collector-base cut-off current V CB = 4 V; I E = 1 na V CB = 4 V; I E = ; T j = 15 C 5 µa I CEO collector-emitter cut-off current V CE = 3 V; I B = 1 na I EBO emitter-base cut-off current V EB =5V; I C = 1 na h FE DC current gain V CE =5V; I C =1mA 3 f T transition frequency I C = 5 ma; V CE =1V; 15 MHz f = 1 MHz C c collector capacitance V CB = 1 V; I E =I e =; 12 pf f = 1 MHz TR1 (NPN) h FE DC current gain V CE =5V; I C = 5 ma 3 9 V CE =5V; I C =1A 2 V CE =5V; I C = 2 A; note 1 75 V CEsat collector-emitter saturation voltage I C = 1 ma; I B =1mA 6 75 mv I C = 5 ma; I B =5mA 8 1 mv I C = 1 A; I B = 1 ma 15 2 mv I C = 2 A; I B = 2 ma; note 1 3 4 mv V BEsat base-emitter saturation voltage I C = 1 A; I B = 1 ma 1.2 V V BEon base-emitter turn-on voltage V CE =5V; I C =1A 1.1 V R CEsat equivalent on-resistance I C = 1 A; I B = 1 ma 2 mω TR2 (PNP) h FE DC current gain V CE = 5 V; I C = 1 ma 3 8 V CE = 5 V; I C = 5 ma 25 V CE = 5 V; I C = 1 A 16 V CE = 5 V; I C = 2 A; note 1 5 V CEsat saturation voltage I C = 1 ma; I B = 1 ma 9 12 mv I C = 5 ma; I B = 5 ma 1 145 mv I C = 1 A; I B = 1 ma 18 26 mv I C = 2 A; I B = 2 ma; note 1 4 53 mv V BEsat saturation voltage I C = 1 A; I B = 5 ma 1.1 V V BEon base-emitter turn-on voltage V CE = 5 V; I C = 1 A 1 V R CEsat equivalent on-resistance I C = 1 A; I B = 1 ma; note 1 26 mω Note 1. Pulse test: t p 3 µs; δ.2. 23 Feb 2 4

8 MHC471 1.2 MHC472 h FE 6 V BE (V).8 4 2.4 1 1 1 1 1 2 1 3 1 4 1 1 1 1 1 2 1 3 1 4 TR1 (NPN); V CE =5V. T amb = 15 C. T amb =25 C. T amb = 55 C. TR1 (NPN); V CE =5V. T amb = 55 C. T amb =25 C. T amb = 15 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 1 3 MHC473 V CEsat (mv) 1.2 V BEsat (V) 1 MHC474 1 2.8.6.4 1 1 1 1 1 1 2 1 3 1 4 TR1 (NPN); I C /I B = 2. T amb = 15 C. T amb =25 C. T amb = 55 C..2 1 1 1 1 TR1 (NPN); I C /I B = 2. T amb = 55 C. T amb =25 C. T amb = 15 C. 1 2 1 3 1 4 Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 23 Feb 2 5

2 I C (A) 1.6 1.2 (4) (5) (6) (7) (8) MHC475 1 3 R CEsat (Ω) 1 2 MHC476 (9) 1.8 (1).4 1.4.8 1.2 1.6 2 V CE (V) 1 1 1 1 1 1 1 2 1 3 1 4 TR1 (NPN); T amb =25 C. I B = 3 ma. I B = 27 ma. I B = 24 ma. (4) I B = 21 ma. Fig.6 (5) I B = 18 ma. (6) I B = 15 ma. (7) I B = 12 ma. (8) I B = 9 ma. (9) I B = 6 ma. (1) I B = 3 ma. Collector current as a function of collector-emitter voltage; typical values. TR1 (NPN); I C /I B = 2. T amb = 15 C. T amb =25 C. T amb = 55 C. Fig.7 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 23 Feb 2 6

1 MHC464 1.2 MHC465 h FE 8 6 V BE (V).8 4.4 2 1 1 1 1 1 2 1 3 1 4 1 1 1 1 1 2 1 3 1 4 TR2 (PNP); V CE = 5 V. T amb = 15 C. T amb =25 C. T amb = 55 C. TR2 (PNP); V CE = 5 V. T amb = 55 C. T amb =25 C. T amb = 15 C. Fig.8 DC current gain as a function of collector current; typical values. Fig.9 Base-emitter voltage as a function of collector current; typical values. 1 3 V CEsat (mv) MHC466 1.2 V BEsat (V) 1 MHC467 1 2.8 1.6.4 1 1 1 1 1 1 2 1 3 1 4.2 1 1 1 1 1 2 1 3 1 4 TR2 (PNP); I C /I B = 2. T amb = 15 C. T amb =25 C. T amb = 55 C. TR2 (PNP); I C /I B = 2. T amb = 55 C. T amb =25 C. T amb = 15 C. Fig.1 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. 23 Feb 2 7

1.2 I C (A) (4) MHC468 2.4 I C (A) 2 (4) (5) MHC469.8 (5) (6) (7) (8) 1.6 1.2 (6) (7) (8) (9).4 (9).8 (1) (1).4.4.8 1.2 1.4 2 V CE (V).4.8 1.2 1.6 2 V CE (V) TR2 (PNP); T amb =25 C. TR2 (PNP); T amb =25 C. I B = 7 ma. I B = 6.3 ma. I B = 5.6 ma. (4) I B = 4.9 ma. (5) I B = 4.2 ma. (6) I B = 3.5 ma. (7) I B = 2.8 ma. (8) I B = 2.1 ma. (9) I B = 1.4 ma. (1) I B =.7 ma. I B = 5 ma. I B = 45 ma. I B = 4 ma. (4) I B = 35 ma. (5) I B = 3 ma. (6) I B = 25 ma. (7) I B = 2 ma. (8) I B = 15 ma. (9) I B = 1 ma. (1) I B = 5 ma. Fig.12 Collector current as a function of collector-emitter voltage; typical values. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 23 Feb 2 8

1 3 R CEsat (Ω) MHC47 1 2 1 1 1 1 1 1 1 1 1 2 1 3 1 4 TR2 (PNP); I C /I B = 2. T amb = 15 C. T amb =25 C. T amb = 55 C. Fig.14 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 23 Feb 2 9

PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D B E A X y H E v M A 6 5 4 Q pin 1 index A 1 2 3 A1 c Lp e bp w M B detail X 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 bp c D E e H E L p Q v w y mm 1.1.9.1.13.4.25.26.1 3.1 2.7 1.7 1.3.95 3. 2.5.6.2.33.23.2.2.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT457 SC-74 97-2-28 1-5-4 23 Feb 2 1

DATA SHEET STATUS LEVEL DATA SHEET STATUS PRODUCT STATUS DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 6134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify for any damages resulting from such application. Right to make changes reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 23 Feb 2 11

a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 4 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. Koninklijke Philips Electronics N.V. 23 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/1/pp12 Date of release: 23 Feb 2 Document order number: 9397 75 1783

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