DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 File under Discrete Semiconductors, SC7 996 Sep
FEATURES Low noise Interchangeability of drain and source connections High gain. APPLICATIONS AM input stage in car radios VHF amplifiers Oscillators and mixers. DESCRIPTION PINNING - SOT23 PIN SYMBOL DESCRIPTION s source 2 d drain 3 g gate 2 g d s N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. Top view 3 MAM36 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Marking codes: PMBFJ38: M8. PMBFJ39: M9. : M. Fig. Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage ±25 V V GSoff gate-source cut-off voltage V DS =V; =µa PMBFJ38 6.5 V PMBFJ39 V 2 6.5 V SS drain current V GS = ; V DS =V PMBFJ38 2 6 ma PMBFJ39 2 3 ma 2 6 ma P tot total power dissipation up to T amb =25 C 25 mw y fs forward transfer admittance V DS =V; =ma ms 996 Sep 2
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 3). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage ±25 V V GSO gate-source voltage open drain 25 V V GDO gate-drain voltage open source 25 V I G forward gate current (DC) 5 ma P tot total power dissipation up to T amb =25 C 25 mw T stg storage temperature 65 5 C T j operating junction temperature 5 C P tot (mw) MBB688 3 2 5 5 2 T amb ( C) Fig.2 Power derating curve. 996 Sep 3
THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th j-a thermal resistance from junction to ambient; note 5 K/W Note. Device mounted on an FR printed-circuit board. STATIC CHARACTERISTICS T j =25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)GSS gate-source breakdown voltage I G = µa; V DS = 25 V V GSoff gate-source cut-off voltage =µa; V DS =V V PMBFJ38 6.5 V PMBFJ39 V 2 6.5 V V GSS gate-source forward voltage I G = ma; V DS = V SS drain current V DS =V; V GS = PMBFJ38 2 6 ma PMBFJ39 2 3 ma 2 6 ma I GSS gate leakage current V GS = 5 V; V DS = na R DSon drain-source on-state V GS = ; V DS = mv 5 Ω resistance y fs forward transfer admittance = ma; V DS =V ms y os common source output admittance = ma; V DS =V 25 µs 996 Sep
DYNAMIC CHARACTERISTICS T j =25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C is input capacitance V DS =V; V GS = V; f = MHz 3 5 pf V DS =V; V GS = ; T amb =25 C 6 pf C rs reverse transfer capacitance V DS = ; V GS = V; f = MHz.3 2.5 pf g is common source input V DS =V; = ma; f = MHz 2 µs conductance V DS =V; = ma; f = 5 MHz 3 ms g fs common source transfer V DS =V; = ma; f = MHz 3 ms conductance V DS =V; = ma; f = 5 MHz 2 ms g rs common source reverse V DS =V; = ma; f = MHz 3 µs conductance V DS =V; = ma; f = 5 MHz 5 µs g os common source output V DS =V; = ma; f = MHz 5 µs conductance V DS =V; = ma; f = 5 MHz µs V n equivalent input noise voltage V DS =V; = ma; f = Hz 6 nv/ Hz 5 SS MCD22 2 y fs (ms) 6 MCD29 3 2 2 8 2 3 V GSoff (V) 2 6 8 V GSoff (V) V DS = V; T j =25 C. Fig.3 Drain current as a function of gate-source cut-off voltage; typical values. V DS = V; = ma; T j =25 C. Fig. Forward transfer admittance as a function of gate-source cut-off voltage; typical values. 996 Sep 5
5 g os (µs) MCD22 8 R DSon (Ω) MCD222 6 5 2 2 3 V GSoff (V) 2 3 V GSoff (V) V DS = V; = ma; T j =25 C. V DS = mv; V GS = ; T j =25 C. Fig.5 Common-source output conductance as a function of gate-source cut-off voltage; typical values. Fig.6 Drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. 6 2 MCD26 V GS = V 6 2 MCD23 8.25 V 8.5 V.75 V V 8 2 6 V DS (V) 2.5.5 V GS (V) T j =25 C. Fig.7 Typical output characteristics; PMBFJ38. V DS = V; T j =25 C. Fig.8 Typical transfer characteristics; PMBFJ38. 996 Sep 6
2 6 MCD28 V GS = V 2 6 MCD25 2.25 V 2 8.5 V 8.75 V V 8 2 6 V DS (V) 2.5.5 V GS (V) T j =25 C. Fig.9 Typical output characteristics; PMBFJ39. V DS = V; T j =25 C. Fig. Typical transfer characteristics; PMBFJ39. MCD27 V GS = V MCD2 3.5 V 3 2 V 2.5 V 2 V 2.5 V 8 2 6 V DS (V) 3 2 V GS (V) T j =25 C. Fig. Typical output characteristics;. V DS = V; T j =25 C. Fig.2 Typical transfer characteristics;. 996 Sep 7
C rs (pf) 3 MCD22 C is (pf) 8 MCD223 6 2 2 8 6 2 V GS (V) 8 6 2 V GS (V) V DS = V; T j =25 C. Fig.3 Reverse transfer capacitance as a function of gate-source voltage; typical values. V DS = V; T j =25 C. Fig. Input capacitance as a function of gate-source voltage; typical values. 3 handbook, full pagewidth (µa) 2 MCD229 2 3 2.5 2.5.5 V GS (V) V DS = V; T j =25 C. Fig.5 Drain current as a function of gate-source voltage; typical values. 996 Sep 8
handbook, full pagewidth I G (pa) 3 = ma ma MCD23 2 µa I GSS 2 6 8 2 V DG (V) 6 T j =25 C. Fig.6 Gate current as a function of drain-gate voltage; typical values. handbook, full pagewidth I GSS (pa) MCD23 3 2 25 25 5 75 25 5 T j ( o C) 75 Fig.7 Gate current as a function of junction temperature; typical values. 996 Sep 9
MCD228 MCD227 g is, b is (ms) g fs, b fs (ms) b is g fs g is b fs. f (MHz) f (MHz) V DS = V; = ma; T amb =25 C. Fig.8 Input admittance; typical values. V DS = V; = ma; T amb =25 C. Fig.9 Forward transfer admittance; typical values. handbook, halfpage 2 MCD226 MCD225 b rs, g rs (ms) b os, g os (ms) b rs b os g rs g os 2 f (MHz). f (MHz) V DS = V; = ma; T amb =25 C. Fig.2 Reverse transfer admittance; typical values. V DS = V; = ma; T amb =25 C. Fig.2 Output admittance; typical values. 996 Sep
PACKAGE OUTLINE handbook, full pagewidth.55.5.5.9.95 3. 2.8.9 2 A B.2 M A o max. max o max..2 2.5 max 3. max 3 o max.8.38 TOP VIEW. M A B MBC86 Dimensions in mm. Fig.22 SOT 23. 996 Sep
DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 3). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 996 Sep 2