Hiden EQP Applications

Similar documents
vacuum analysis plasma diagnostics surface science gas analysis

A novel sputtering technique: Inductively Coupled Impulse Sputtering (ICIS)

DOE WEB SEMINAR,

June 5, 2012: Did you miss it? No Problem. Next chance in Venus in Front of the Sun and there is more: plasma imaging!

Hiden EQP Systems. High Sensistivity Mass and Energy Analyzers for Monitoring, Control and Characterization of Ions, Neutrals and Radicals in Plasma.

SURFACE ENGINEERING MASS SPECTROMETERS FOR THIN FILMS, PLASMA AND SURFACE ENGINEERING

Effects of cross field diffusion in a low pressure high density oxygen/silane plasma

Extrel Application Note

High power impulse plasmas for thin film deposition

DPP06 Meeting of The American Physical Society. Production of negative ion plasmas using perfluoromethylcyclohexane (C 7 F 14 )

Effect of Spiral Microwave Antenna Configuration on the Production of Nano-crystalline Film by Chemical Sputtering in ECR Plasma

PRINCIPLES OF PLASMA DISCHARGES AND MATERIALS PROCESSING

Chapter 7 Plasma Basic

Effect of wall charging on an oxygen plasma created in a helicon diffusion reactor used for silica deposition

Plasma diagnostics of pulsed sputtering discharge

Feature-level Compensation & Control

High Sensitivity Mass and Energy Analysers for Monitoring, Control and Characterisation of Ions, Neutrals and Radicals in Plasma

Chapter 7. Plasma Basics

Repetition: Practical Aspects

PIC-MCC/Fluid Hybrid Model for Low Pressure Capacitively Coupled O 2 Plasma

Mass Spectrometer A Comparison of Positive and Negative Ion RGA Methods

Plasma-Surface Interactions and Impact on Electron Energy Distribution Function

Huashun Zhang. Ion Sources. With 187 Figures and 26 Tables Э SCIENCE PRESS. Springer

Lecture 6 Plasmas. Chapters 10 &16 Wolf and Tauber. ECE611 / CHE611 Electronic Materials Processing Fall John Labram 1/68

Thin Films, Plasma and Surface Engineering. In the Press. Plasma Diagnostics for the Researcher. Hiden Applications

CHAPTER 6: Etching. Chapter 6 1

PIC-MCC/Fluid Hybrid Model for Low Pressure Capacitively Coupled O 2 Plasma

Plasma chemistry and surface processes of negative ions

Energy fluxes in plasmas for fabrication of nanostructured materials

PIC-MCC simulations for complex plasmas

Quadrupole Mass Spectrometry Concepts. Mass spectrometers for residual gas analysis: Intermediate Level Users Guide

Measurement of electron energy distribution function in an argon/copper plasma for ionized physical vapor deposition

Combinatorial RF Magnetron Sputtering for Rapid Materials Discovery: Methodology and Applications

Section 5: Thin Film Deposition part 1 : sputtering and evaporation. Jaeger Chapter 6. EE143 Ali Javey

Global modeling of HiPIMS systems: transition from homogeneous to self organized discharges

Hong Young Chang Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Republic of Korea

DEPOSITION OF THIN TiO 2 FILMS BY DC MAGNETRON SPUTTERING METHOD

Hiden HPR60 Molecular Beam Mass Spectrometer System

High power impulse magnetron sputtering (HIPIMS) : Fundamental plasma studies and material synthesis.

Application of the EQP and EQS mass spectrometers to time resolved studies in ion beam and plasma processes

arxiv: v1 [physics.plasm-ph] 23 May 2013

RGA modelling and simulation to include pressure dependence in the ion source

TMT4320 Nanomaterials November 10 th, Thin films by physical/chemical methods (From chapter 24 and 25)

Plasma Diagnostics Introduction to Langmuir Probes

Volume Production of D - Negative Ions in Low-Pressure D 2 Plasmas - Negative Ion Densities versus Plasma Parameters -

arxiv: v1 [physics.plasm-ph] 10 Nov 2014

Influence of the nitrogen admixture to argon on the ion energy distribution in reactive high

The role of recycling in pulsed sputtering magnetrons

PHYSICAL VAPOR DEPOSITION OF THIN FILMS

Composition and dynamics of high power impulse magnetron discharge at W-Mo-C target in argon atmosphere

A high power impulse magnetron sputtering model to explain high deposition rate magnetic field configurations

The Gaseous Electronic Conference GEC reference cell as a benchmark for understanding microelectronics processing plasmas*

Workshops on X-band and high gradients: collaboration and resource

Introduction to the Q Trap LC/MS/MS System

Relationship between production and extraction of D - /H - negative ions in a volume negative ion source

Ion Implanter Cyclotron Apparatus System

ETCHING Chapter 10. Mask. Photoresist

Theory of Gas Discharge

Study of DC Cylindrical Magnetron by Langmuir Probe

Secondary Ion Mass Spectroscopy (SIMS)

Ionized physical vapor deposition (IPVD): A review of technology and applications

Characterization of an Oxygen Plasma by Using a Langmuir Probe in an Inductively Coupled Plasma

THIN FILMS, PLASMA & SURFACE ENGINEERING. Mass Spectrometers. for Thin Films, Plasma & Surface Engineering

Plasma Diagnosis for Microwave ECR Plasma Enhanced Sputtering Deposition of DLC Films

Modification of thin films and nanoparticles. Johannes Berndt, GREMI,Orléans

EE143 Fall 2016 Microfabrication Technologies. Lecture 6: Thin Film Deposition Reading: Jaeger Chapter 6

The Computational Simulation of the Positive Ion Propagation to Uneven Substrates

Temporal Evolution of Ion Energy Distribution Functions and Ion Charge States of Cr and Cr-Al Pulsed Arc Plasmas

Linköping University Post Print. Cross-field ion transport during high power impulse magnetron sputtering

Chemistry Instrumental Analysis Lecture 17. Chem 4631

Etching Issues - Anisotropy. Dry Etching. Dry Etching Overview. Etching Issues - Selectivity

ARGON RF PLASMA TREATMENT OF PET FILMS FOR SILICON FILMS ADHESION IMPROVEMENT

IR emission from the target during plasma magnetron sputter deposition

Thomas Schwarz-Selinger. Max-Planck-Institut for Plasmaphysics, Garching Material Science Division Reactive Plasma Processes

A Kinetic Theory of Planar Plasma Sheaths Surrounding Electron Emitting Surfaces

K. Takechi a) and M. A. Lieberman Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720

In search for the limits of

Keywords. 1=magnetron sputtering, 2= rotatable cathodes, 3=substrate temperature, 4=anode. Abstract

PIC/MCC Simulation of Radio Frequency Hollow Cathode Discharge in Nitrogen

Spatially resolved mass spectrometric sampling of inductively coupled plasmas using a movable sampling orifice

MICROCHIP MANUFACTURING by S. Wolf

FINAL REPORT. DOE Grant DE-FG03-87ER13727

Ion energies in high power impulse magnetron sputtering with and without localized

Equilibrium model for two low-pressure electronegative plasmas connected by a double layer

Control of Ion Energy Distributions on Plasma Electrodes

Numerical simulation of Vibrationally Active Ar-H2 Microwave Plasma

Production and destruction of CF x radicals in radio-frequency fluorocarbon plasmas

Effect of Noble Gas. Plasma Processing Laboratory University of Houston. Acknowledgements: DoE Plasma Science Center and NSF

Report A+M/PSI Data Centre NRC Kurchatov Institute

In situ electrical characterization of dielectric thin films directly exposed to plasma vacuum-ultraviolet radiation

Experimental analysis of plasma conditions in an inverted cylindrical magnetron sputtering system

3 - Atomic Absorption Spectroscopy

Evaluated electron and positronmolecule scattering data for modelling particle transport in the energy range ev

Secondary Ion Mass Spectrometry (SIMS)

Chapter VI: Cold plasma generation

Experimental investigation of double layers in expanding plasmas

6.5 Optical-Coating-Deposition Technologies

Diagnostics of low and atmospheric pressure plasmas by means of mass spectrometry

( 1+ A) 2 cos2 θ Incident Ion Techniques for Surface Composition Analysis Ion Scattering Spectroscopy (ISS)

Application Note GA-301E. MBMS for Preformed Ions. Extrel CMS, 575 Epsilon Drive, Pittsburgh, PA I. SAMPLING A CHEMICAL SOUP

Transcription:

Hiden EQP Applications Mass/Energy Analyser for Plasma Diagnostics and Characterisation

EQP Overview The Hiden EQP System is an advanced plasma diagnostic tool with combined high transmission ion energy analyser and quadrupole mass spectrometer, acquiring both mass spectra at specified ion energies and ion energy distributions of selected plasma ions. The advanced EQP ioniser allows neutral and radical detection, the electron attachment ionisation feature further enhancing the detection capability for radicals in electronegative plasma chemistries.

The NIST GEC Test Cell Sheath regions Vp a b Ions rf Vb Plasma (capacitively coupled)

6 5 41 amu ArH + 3 4 amu Ar + 4 3 rf pk/pk 25 2 2 1 19v 15 1 5-18 18 36 54 72 9-18 18 36 54 72 9 1 2 8 15 NIST GEC Example 6 4 2 48v 1 5 Energy Spectra -18 15 18 36 54 72 9-18 3 25 18 36 54 72 9 1 2 5 76v 15 1 5-18 18 36 54 72 9-18 18 36 54 72 9 15 2 1 1v 15 1 5 5-18 18 36 54 72 9-18 18 36 54 72 9

NIST GEC Example Data - Conclusions As the rf amplitude is increased both Ar + and ArH + show: Increases in Plasma Potential Increases in Ion Energy Splitting of the high energy peaks - transition time across the sheath rf Ar + also exhibits high concentrations of lower energy ions - due to inelastic collisions between Ar / Ar +

Detection of Negative Hydrogen Ions from bombardment of a Carbon Sample in a Capacitively Coupled Plasma Negative Ion Distribution Functions (NIDFs) obtained using the 45º Sector Field Energy Analyser.

Positive Ion Species from a HIPIMS Plasma N + Ti 2 + Ar + Ti + HIPIMS Discharge on a 2x6 mm 2 Ti Target. TiN + Peak Current Density: 3 A.cm -2, Peak Power Density 3 kw.cm -2.

Intensity, c/s Electron Energy Spectra 1 1 A comparison of the electron energy spectra for the principle cluster ions Fullerene C ++ 6 (m/z = 36) C +++ 6 (m/z = 24 ) C + 6 (m/z = 72) 1 The data compares the appearance potentials for the principle cluster ions formed from Buckminsterfullerene 1 2 4 6 8 1 12 14 16 Electron energy, v

Electron Attachment Cross-Sections 35 3 O - ex CO 2, Plasma off 25 2 15 1 5 4 8 12 16 2 24 28 electron- Attachment cross-sections for CO 2 (Rapp and Briglia) 22 2 18 16 14 12 1 8 6 4 2 O - ex CO, Plasma off. (residual CO 2 yields 8.2 ev peak) 4 12 16 2 24 28 electron- a O - ex neutrals ex CO 2, Plasma on a is O - ex CO 2 b is O - ex CO 2 + e - CO 2- CO+ O - 12 11 1 9 8 7 6 5 4 3 2 1 A b B 4 8 12 16 2 24 28 electron-

Electron Energy Spectra for CF 4 Plasma Plasma off ccl2f2 plasma off -on -off. 18mTorr chamber preasure. Two parent species for CF 2+ can be seen when the plasma is active. 1 1 1 The plasma derived species produce a characteristic feature at lower energies. 1 1 1 1 ccl2f2 plasma off -on -off. 18mTorr chamber preasure. 5 9.16667 13.3333 17.5 21.6667 25.8333 3 Plasma on electron- 1 5 9.16667 13.3333 17.5 21.6667 25.8333 3 electron-

Electron Attachment Spectra HAL4 EQP Low Energy #DE33 HAL4 EQP Low Energy #DE33 12 6 1 5 8 4 6 3 4 2 2 1 2 4 6 8 1 12 14 16 2 4 6 8 1 12 14 16 Cycle number 1 electron- Cycle number 1 electron- O - species may be formed from various precursors e.g. CO, CO 2, N 2 O via electron attachment and subsequent dissociation. The low energy resonant electrons required for this process are characteristic of the precursor involved.

Electron Attachment in a CF 4 Plasma 6 5 Plasma Off Plasma On 4 3 2 1 1 2 3 4 5 6 7 8 9 1 11 12 13 electron Formation of F - species can occur in the absence of plasma but the under working conditions there is a dramatic increase in F - concentration and type from plasma derived precursors.

Plasma Analysis using the Driven Electrode 45 4 2mTorr ar -65vbias -75v ext. Ar + 2 mtorr 21 2 19 18 Ar + 1 mtorr 1mTorr ar -65v bias -75v ext. 17 35 16 15 3 14 13 25 2 V B V P 12 11 1 9 8 15 1 7 6 5 4 3 5 2 1-1 -9-8 -7-6 -5-4 -3-2 -1 Cycle number Energy V 1 2 3 4 5 Cycle number -1-9 -8-7 -6-5 -4-3 -2-1 1 2 3 4 5 Energy V 25mTorr ar -65v bias -75v ext. 1mTorr ar -65v bias -75v ext. 22 2 Ar + 25 mtorr 3 28 26 Ar H + 1 mtorr VP 18 24 16 22 2 14 18 12 16 1 14 12 8 1 6 4 2 8 6 4 2 VB -1-9 -8-7 -6-5 -4-3 -2-1 1 2 3 4 5 Cycle number Energy V -1-9 -8-7 -6-5 -4-3 -2-1 1 2 3 4 5 Cycle number Energy V

Plasma Analysis using the Driven Electrode 44mTorr ar -65v bias -75v ext. Ar + 44 mtorr 5mTorr ar -65v bias -75v ext. Ar + 5 mtorr 17 21 16 2 15 19 14 13 18 17 16 12 15 11 14 1 9 13 12 11 8 1 7 9 6 5 8 7 6 4 5 3 4 2 1 3 2 1-1 -9-8 -7-6 -5-4 -3-2 -1 1 2 3 4 5 Energy V -1-9 -8-7 -6-5 -4-3 -2-1 1 2 3 4 5 Energy V Time 14:54:6 Date 13/3/97 Time 14:8:36 Date 13/3/97 Negative energy ions due to influence of the biased electrode (V b ) V peak corresponds to centre of characteristic rf split peak feature As the pressure in the plasma increases inelastic collisional broadening / energy loss of Ar + (not ArH + ) is seen to dominate

Energy Analysis of Plasma Components 2mTorr arsf6-65vbias -75v ext. 8mTorr ar sf6-4vbias --5v ext. 1 9 8 F + ions 1 9 8 SF + 7 7 6 6 5 5 4 4 3 3 2 2 1 1-1 -9-8 -7-6 -5-4 -3-2 -1 1 2 3 4 5 6 7 8 9 1 Cycle number Energy V -5-45 -4-35 -3-25 -2-15 -1-5 5 1 15 2 25 3 35 4 45 5 Cycle number Energy V 8mTorr ar sf6-4vbias --5v ext. 8mTorr ar sf6-4vbias --5v ext. 1 1 9 8 SF 2 + 9 8 SF 3 + 7 7 6 6 5 5 4 4 3 3 2 2 1 1-5 -45-4 -35-3 -25-2 -15-1 -5 5 1 15 2 25 3 35 4 45 5 Cycle number Energy V -5-45 -4-35 -3-25 -2-15 -1-5 5 1 15 2 25 3 35 4 45 5 Cycle number Energy V Even in an apparently homogeneous plasma the individual component species can exhibit a wide variation in energies.

EQP Studies of a D.C. Magnetron Plasma D.C. -5 V to V 5 m orifice 1-3 Torr 5 cm 5x1-7 Torr V c = -3 V to -38 V Magnetron Cathode: Cu, Al, Mo or Graphite Working Gas: Argon or Sulfur Hexafluoride 6 cm D.C. MAGNETRON EQP PROBE

C/S D.C. Magnetron Plasma Data Fast Neutral Species 1 Power : 4 Watts Ar pressure : 5 mtorr Magnetron / EQP Distance : 3. cm 1 1 1 1 1 2 3 4 5 6 7 8 9 1111213141516171819221 energy / ev High Energy tail (>5 ev) - energetic copper atoms ejected from magnetron cathode and ionised in the Ar plasma close to the EQP orifice and reflect the kinetic energies with which the atoms leave the cathode.

C/S D.C. Magnetron Plasma Data Fast Neutral Species Power : 4 Watts Current : 3 ma Ar pressure : 5 mtorr Magnetron / EQP Distance : 3. cm 1 1 1 nb. The EQP was set to reject ions from plasma hence small background of ca. 2 c/s above 15 ev. 1 1 2 3 4 5 6 7 8 9 1111213141516171819 energy / ev 2 components, one due to strong, thermal energy + weaker feature extending up to 15 ev. Plasma off no copper detected above 3 ev, indicating all kinetic ions produced in the ioniser / cage.

Latest publications Selected Publications Negative-ion surface production in hydrogen plasmas: modelling of negative-ion energy distribution functions and comparison with experiments. 213. A Ahmad et al. Plasma Sources Sci. Technol. 22 256 Spacially enhanced Langmuir probe measurements of a magnetically enhanced hollow cathode arc plasma. 211. B Zimmermann et al. Surface and coatings technology 25 5393-5396 Quantification of the deuterium ion fluxes from a plasma source. 211. A Manhard et al. Plasma Sources Sci. Technol. 2 151 Advantages of highly ionized pulse plasma magnetron sputtering of silver for improved E. coli inactivation. 212. O Baghriche et al. Thin Solid Films 52 3567-3573 Influence of high power impulse magnetron sputtering plasma ionization on the microstructure of TiN thin films. 211. AP Ehiasarian. J. Appl. Phys. 19 14314

Selected Hiden EQP Users INP Greifswald Xi an Modern Chemistry Institute Universite d Orleans Southwest Research Institute KRICT Applied Materials Fraunhofer IWS Ruhr-Universität Bochum

SEM c/s Summary High performance probe for mass and energy analysis of ions, radicals and neutrals from a plasma. A large number of options are available in order to sample from a variety of plasma types. The EQP sees use worldwide in a variety of plasma applications. 5 4 3 2 1 5 1 15 2 Ion Energy ev