NPN Silicon RF Transistor For broadband amplifiers up to GHz at collector currents from ma to ma Pbfree (RoHS compliant) package ) Qualified according AEC Q ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package MCs = B = E = C SOT Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO 5 V Collectorbase voltage V CBO 5 Emitterbase voltage V EBO.5 Collector current I C 5 ma Peak collector current, f = MHz I CM 5 Total power dissipation ) T S 9 C P tot 8 mw Junction temperature T j 5 C Ambient temperature T A 65... 5 Storage temperature T stg 65... 5 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 5 K/W Pbcontaining package may be available upon special request T S is measured on the collector lead at the soldering point to the pcb For calculation of R thja please refer to Application Note Thermal Resistance 7
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage I C = ma, I B = V (BR)CEO 5 V Collectorbase cutoff current V CB = V, I E = V CB = 5 V, I E = Emitterbase cutoff current V EB =.5 V, I C = DC current gain I C = ma, V CE = V, pulse measured I C = 5 ma, V CE = V, pulse measured Collectoremitter saturation voltage I C = ma, I B = ma I CBO µa.5 I EBO h FE 4 7 5 V CEsat..4 V 7
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T GHz I C = ma, V CE = 5 V, f = MHz I C = 5 ma, V CE = 5 V, f = MHz..4.5 Collectorbase capacitance V CB = 5 V, f = MHz, V BE =, emitter grounded Collector emitter capacitance V CE = 5 V, f = MHz, V BE =, base grounded Emitterbase capacitance V EB = V, f = MHz, V CB =, collector grounded Noise figure I C = ma, V CE = 5 V, Z S = 5 Ω, f = 8 MHz C cb 5.8 pf C ce. C eb.9.45 F.5 5 db Transducer gain I C = ma, V CE = 5 V, Z S = Z L = 5Ω, f = 5 MHz Third order intercept point at output V CE = 5 V, I C = ma, f = 8 MHz, S e 4 db IP.5 dbm Z S = Z Sopt, Z L = Z Lopt db Compression point I C = ma, V CE = 5 V, Z S = Z L = 5Ω, f = 8 MHz P db 7
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) mw K/W 4 Ptot RthJS 6 8 4...5...5 D = 5 45 6 75 9 5 C 5 T S Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D =.5...5.. 7 6 5 4 s Collectorbase capacitance C cb = ƒ(v CB ) Emitterbase capacitance C eb = ƒ(v EB ) f = MHz CCB, CEB. pf.9.8.7.6.4 CCB CEB t p... 6 5 4 s t p 4 6 8 4 6 V V CB, V EB 4 7
Transition frequency f T = ƒ(i C ) V CE = parameter GHz V 5V V ft V.5 V.7V 5 5 ma I C 5 7
Package SOT Package Outline ±.. +..5 x. M. MAX...9 ±. A.65.65.±.. MIN. +..5.5 ±.. M A Foot Print.6 Marking Layout (Example) Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.. 8.8.6.65.65 Manufacturer 5, June Date code (YM) Pin BCR8W Type code Pin.5. 6 7
Edition 6 Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 7. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 7