OptiMOS -5 Power-Transistor Product Summary V DS 4 V R DS(on),max mw Features OptiMOS - power MOSFET for automotive applications I D A PG-HSOF-5 N-channel - Enhancement mode - Normal Level AEC Q qualified MSL3 up to 26 C peak reflow 75 C operating temperature Green Product (RoHS compliant) % Avalanche tested 2 3 4 5 Type Package Marking PG-HSOF-5 5N4N Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C =25 C, V GS =V ) A T C = C, V GS =V 2) Pulsed drain current 2) I D,pulse T C =25 C 8 Avalanche energy, single pulse 2) E AS I D =A 28 mj Avalanche current, single pulse I AS - A Gate source voltage V GS - ±2 V Power dissipation P tot T C =25 C 67 W Operating and storage temperature T j, T stg - -55... +75 C Rev.. page 28-7-
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics 2) Thermal resistance, junction - case R thjc - - -.9 K/W Thermal resistance, junction - ambient R thja 6 cm 2 cooling area 3) - - 6 Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS =V, I D = ma 4 - - V Gate threshold voltage V GS(th) V DS =V GS, I D =µa 2.2 2.8 3.4 Zero gate voltage drain current I DSS V DS =4V, V GS =V, T j =25 C - - µa V DS =4V, V GS =V, T j =25 C 2) - - Gate-source leakage current I GSS V GS =2V, V DS =V - - na Drain-source on-state resistance R DS(on) V GS =7V, I D =A -.9.2 mw V GS =V, I D =A -.8. Rev.. page 2 28-7-
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics 2) Input capacitance C iss - 575 765 pf Output capacitance C oss V GS =V, V DS =25V, f =MHz - 6 23 Reverse transfer capacitance C rss - 8 2 Turn-on delay time t d(on) - - ns Rise time t r V DD =2V, V GS =V, - 6 - Turn-off delay time t d(off) I D =A, R G =3.5W - 23 - Fall time t f - 2 - Gate Charge Characteristics 2) Gate to source charge Q gs - 28 37 nc Gate to drain charge Q gd V DD =32V, I D =A, - 2 32 Gate charge total Q g V GS = to V - 99 32 Gate plateau voltage V plateau - 4.7 - V Reverse Diode Diode continous forward current 2) I S T C =25 C - - A Diode pulse current 2) I S,pulse - - 8 Diode forward voltage V SD V GS =V, I F =A, T j =25 C Reverse recovery time 2) t rr V R =2V, I F =5A, di F /dt =A/µs -.8. V - 65 - ns Reverse recovery charge 2) Q rr - 8 - nc ) Current is limited by package; with an R thjc =.9K/W the chip is able to carry 3A at 25 C. 2) The parameter is not subject to production test- verified by design/characterization. 3) Device on 4 mm x 4 mm x.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. Rev.. page 3 28-7-
Z thjc [K/W] P tot [W] Power dissipation 2 Drain current P tot = f(t C ); V GS = V I D = f(t C ); V GS = V 225 75 5 25 75 5 25 75 75 5 5 25 25 5 5 5 5 T C [ C] T C [ C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(v DS ); T C = 25 C; D = Z thjc = f(t p ) parameter: t p parameter: D =t p /T µs µs µs.5 5 µs -..5. -2 single pulse. V DS [V] -3-6 -5-4 -3-2 - t p [s] Rev.. page 4 28-7-
R DS(on) [mw] R DS(on) [mw] 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(v DS ); T j = 25 C R DS(on) = f(i D ); T j = 25 C parameter: V GS parameter: V GS 8 7 V 7 V 5.5 V 6 8 5 6 4 5V 3 4 4.5 V 5 V 5.5 V 4.5V 2 7V 2 3 V DS [V] V 3 4 5 6 7 8 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(v GS ); V DS = 6V R DS(on) = f(t j ); I D = A; V GS = V parameter: T j 8.75 7.5 6 5.25 4 3.75 75 C 25 C -55 C.5 3 4 5 6 V GS [V].25-6 -2 2 6 4 8 T j [ C] Rev.. page 5 28-7-
I F [A] I AV [A] V GS(th) [V] C [pf] 9 Typ. gate threshold voltage Typ. capacitances V GS(th) = f(t j ); V GS = V DS C = f(v DS ); V GS = V; f = MHz parameter: I D 4 4 Ciss 3.5 Coss 3 2.5 µa 3 2 µa Crss.5 2.5-6 -2 2 6 4 8 T j [ C] 2 3 V DS [V] Typical forward diode characteristicis 2 Avalanche characteristics IF = f(v SD ) I A S = f(t AV ) parameter: T j 3 parameter: T j(start) 2 25 C 75 C 25 C C 5 C.2.4.6.8.2.4 V SD [V] t AV [µs] Rev.. page 6 28-7-
V GS [V] E AS [mj] V BR(DSS) [V] 3 Avalanche energy 4 Drain-source breakdown voltage E AS = f(t j ) V BR(DSS) = f(t j ); I D = ma 6 46 5 A 5 44 4 42 3 A 4 A 38 25 75 25 75 T j [ C] 36-6 -2 2 6 4 8 T j [ C] 5 Typ. gate charge 6 Gate charge waveforms V GS = f(q gate ); I D = A pulsed parameter: V DD 9 8 V GS Q g 7 6 8 V 32 V 5 4 V gs(th) 3 2 Q g(th) Q sw Q gate 2 3 4 5 6 7 8 9 Q gs Q gd Q gate [nc] Rev.. page 7 28-7-
Published by Infineon Technologies AG 8726 Munich, Germany Infineon Technologies AG 27 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.. page 8 28-7-
Revision History Version Revision. Revision. Date Changes 7.2.27 Final Data Sheet.7.28 package name, SOA µs curve Rev.. page 9 28-7-