AUTOMOTIVE GRADE Features Advanced Planar Technology Ultra Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 5 C Operating Temperature Lead-Free, RoHS Compliant Automotive Qualified * S G S2 G2 N-CHANNEL MOSFET 8 2 7 3 6 4 5 P-CHANNEL MOSFET Top View D D D2 D2 V DSS R DS(on) typ. N-CH 55V.43 max..5 I D 4.7A P-CH -55V.95.5-3.4A Description Specifically designed for Automotive applications, these HEXFET Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 5 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Standard Pack Base part number Package Type Form Quantity Orderable Part Number SO-8 Tape and Reel 4 TR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25 C, unless otherwise specified. Symbol Parameter Max. N-Channel P-Channel Units V DS Drain-Source Voltage 55-55 V I D @ T A = 25 C Continuous Drain Current, V GS @ V 4.7-3.4 I D @ T A = 7 C Continuous Drain Current, V GS @ V 3.8-2.7 A I DM Pulsed Drain Current 38-27 P D @T A = 25 C Maximum Power Dissipation 2. P D @T A = 7 C Maximum Power Dissipation.3 W E AS Single Pulse Avalanche Energy (Thermally Limited) 72 4 mj I AR Avalanche Current 4.7-3.4 A E AR Repetitive Avalanche Energy.2 mj V GS Gate-to-Source Voltage ± 2 V dv/dt Peak Diode Recovery dv/dt 5. -5. V/ns T J Operating Junction and Storage Temperature Range -55 to + 5 C T STG SO-8 G D S Gate Drain Source Thermal Resistance Symbol Parameter Typ. Max. Units R JA Junction-to-Ambient ( PCB Mount, steady state) 62.5 C/W HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 25-9-3
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch 55 V GS = V, I D = 25µA V P-Ch -55 V GS = V, I D = -25µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient N-Ch.59 Reference to 25 C, I D = ma V/ C P-Ch.54 Reference to 25 C, I D = -ma R DS(on) Static Drain-to-Source On-Resistance.43.5 V GS = V, I D = 4.7A N-Ch.56.65 V GS = 4.5V, I D = 3.8A.95.5 V GS = -V, I D = -3.4A P-Ch.5.7 V GS = -4.5V, I D = -2.7A V GS(th) Gate Threshold Voltage N-Ch. V DS = V GS, I D = 25µA V P-Ch -. V DS = V GS, I D = -25µA gfs Forward Trans conductance N-Ch 7.9 V DS = V, I D = 4.5A S P-Ch 3.3 V DS = -V, I D = -3.A N-Ch 2. V DS = 55V, V GS = V I DSS Drain-to-Source Leakage Current P-Ch -2. V DS = -55V,V GS = V µa N-Ch 25 V DS = 55V, V GS = V,T J = 55 C P-Ch -25 V DS = -55V,V GS = V,T J = 55 C Gate-to-Source Forward Leakage N-P ± V GS = ± 2V I GSS na Gate-to-Source Reverse Leakage N-P ± V GS = ± 2V Dynamic Electrical Characteristics @ T J = 25 C (unless otherwise specified) Q g Q gs Q gd t d(on) t r t d(off) t f C iss C oss C rss Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Ch 24 36 N-Channel P-Ch 26 38 I D = 4.5A, V DS = 44V,V GS = V N-Ch 2.3 3.4 nc P-Ch 3. 4.5 P-Channel N-Ch 7. I D = - 3.A,V DS = -44V,V GS = -V P-Ch 8.4 3 N-Ch 8.3 2 N-Channel P-Ch 4 22 V DD = 28V,I D =.A,R G = 6. N-Ch 3.2 4.8 R D = 28 P-Ch 5 ns N-Ch 32 48 P-Channel P-Ch 43 64 V DD = -28V,I D = -.A,R G = 6. N-Ch 3 2 R D = 28 P-Ch 22 32 N-Ch 74 N-Channel P-Ch 69 V GS = V,V DS = 25V,ƒ =.MHz N-Ch 9 pf P-Ch 2 P-Channel N-Ch 7 V GS = V,V DS = -25V,ƒ =.MHz P-Ch 86 Parameter Min. Typ. Max. Units Conditions N-Ch 2. I S Continuous Source Current (Body Diode) P-Ch -2. Pulsed Source Current N-Ch 38 I SM (Body Diode) P-Ch -27 A V SD Diode Forward Voltage N-Ch.7.2 T J = 25 C,I S = 2.A,V GS = V V P-Ch -.8 -.2 T J = 25 C,I S = -2.A,V GS = V t rr Reverse Recovery Time N-Ch 6 9 N-Channel ns P-Ch 54 8 T J = 25 C,I F = 2.A, di/dt = A/µs Q rr Reverse Recovery Charge N-Ch 2 7 P-Channel nc P-Ch 85 3 T J = 25 C,I F = -2.A, di/dt = A/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 22) N-Channel I SD 4.7A, di/dt 22A/µs, V DD V (BR)DSS, T J 5 C. P-Channel I SD -3.4A, di/dt -5A/µs, V DD V (BR)DSS, T J 5 C N-Channel Starting T J = 25 C, L = 6.5mH, R G = 25, I AS = 4.7A. P-Channel Starting T J = 25 C, L = 2mH, R G = 25, I AS = -3.4A. Pulse width 3µs; duty cycle 2%. Surface mounted on FR-4 board, t sec. 2 25-9-3
N-Channel Fig. Typical Output Characteristics Fig. 2 Typical Output Characteristics I D, Drain-to-Source Current (A) T J= 25 C T J= 5 C I SD, Reverse Drain Current (A) T J= 5 C T J = 25 C V DS= 25V 2µs PULSE WIDTH 3 4 5 6 V GS, Gate-to-Source Voltage (V) V GS = V..2.5.8..4 V SD,Source-to-Drain Voltage (V) Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Source-Drain Diode Forward Voltage 3 25-9-3
N-Channel R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = 4.7A 2..5..5 V GS = V. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current E AS, Single Pulse Avalanche Energy (mj) 2 6 2 8 4 TOP BOTTOM I D 2.A 3.8A 4.7A 25 5 75 25 5 Starting T, Junction Temperature ( J C) Fig. 7 Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current 4 25-9-3
N-Channel C, Capacitance (pf) 2 VGS = V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED C = rss Cgd Coss = Cds + Cgd 8 C iss 6 4 C oss 2 C rss V DS, Drain-to-Source Voltage (V) V GS, Gate-to-Source Voltage (V) 2 6 2 8 4 I D = 4.5A V DS= 48V V DS= 3V V DS= 2V 2 3 4 Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thja ) D =.5.2..5.2. SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thja + TA..... t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 25-9-3
P-Channel Fig. 2 Typical Output Characteristics Fig. 3 Typical Output Characteristics -I D, Drain-to-Source Current (A) T J = 25 C T J = 5 C V DS= -25V 2µs PULSE WIDTH 3 4 5 6 7 -V GS, Gate-to-Source Voltage (V) -I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V..2.4.6.8..2.4 -V SD,Source-to-Drain Voltage (V) Fig. 4 Typical Transfer Characteristics Fig. 5 Typical Source-Drain Diode Forward Voltage 6 25-9-3
P-Channel R DS(on), Drain-to-Source On Resistance (Normalized) 2. I D = -3.4 A.5..5 V GS = -V. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature( C) Fig 6. Normalized On-Resistance Vs. Temperature Fig 7. Typical On-Resistance Vs. Drain Current E AS, Single Pulse Avalanche Energy (mj) 3 25 2 5 5 I D TOP -.5A -2.7A BOTTOM -3.4A 25 5 75 25 5 Starting T, Junction Temperature ( J C) Fig. 8 Typical On-Resistance Vs. Gate Voltage Fig 9. Maximum Avalanche Energy Vs. Drain Current 7 25-9-3
P-Channel C, Capacitance (pf) 2 96 72 48 24 VGS = V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss C rss SHORTED -V GS, Gate-to-Source Voltage (V) 2 6 2 8 4 I D = -3.A V DS=-48V V DS=-3V V DS=-2V -V DS, Drain-to-Source Voltage (V) 2 3 4 Q G, Total Gate Charge (nc) Fig 2. Typical Capacitance Vs. Drain-to-Source Voltage Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thja ) D =.5.2..5.2. SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thja + TA..... t, Rectangular Pulse Duration (sec) PDM t t2 Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 25-9-3
SO-8 Package Outline (Dimensions are shown in millimeters (inches) A E 6 6X 8 7 2 e D 5 6 5 3 4 B H.25 [.] A DIM A A b D E e e H K L y INCHES MIN MAX.532.688.4.98.3.2.89.968 4.8.497.574 3.8.5 BASIC.27 BASIC.25 BASIC.635 BASIC.2284.244 5.8.99.96.25.6.5.4 8 MILLIMETERS MIN MAX.35.75..25.33.5 c.75.98.9.25 5. 4. 6.2.5.27 8 e A C y K x 45 8X b A.25 [.] C A B. [.4] 8X L 7 8X c N O T E S :. D IM EN SIO N IN G & TO LERAN C IN G PER ASM E Y4.5M -994. 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ]. 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 2 A A. 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S. M O LD PRO TRU SIO N S N O T TO EXC EED.5 [.6]. 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S. M O LD PRO TRU SIO N S N O T TO EXC EED.25 [.]. 7 D IM EN SIO N IS TH E LEN G TH O F LEAD FO R SO LD ERIN G TO A S U B S T R A T E. 6.46 [.255] 3X.27 [.5] F O O T P R IN T 8X.72 [.28] 8X.78 [.7] SO-8 Part Marking Information 9 25-9-3
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-48 & EIA-54. 33. (2.992) MAX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. 4.4 (.566 ) 2.4 (.488 ) 25-9-3
Qualification Information Automotive (per AEC-Q) Qualification Level Comments: This part number(s) passed Automotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level SO-8 MSL Machine Model Class M2 (+/- 2V) AEC-Q-2 ESD Human Body Model Class HA (+/- 5V) AEC-Q- Charged Device Model Class C5 (+/- 25V) AEC-Q-5 RoHS Compliant Yes Highest passing voltage. Revision History Date Comments 3//24 Added "Logic Level Gate Drive" bullet in the features section on page Updated data sheet with new IR corporate template 9/3/25 Updated datasheet with corporate template Corrected ordering table on page. Published by Infineon Technologies AG 8726 München, Germany Infineon Technologies AG 25 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 25-9-3