Supporting Information. Highly Efficient Polymer-Based Optoelectronics Devices Using PEDOT:PSS and a GO Composite Layer as a Hole Transport Layer Jae Choul Yu,,, Jeong In Jang, Bo Ram Lee,,, Geon-Woong Lee, Joong Tark Han,,* and Myoung Hoon Song,,,* School of Advanced Materials Engineering, KIST-UNIST Ulsan center for Convergent Materials Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 689-798, Republic of Korea Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute (KERI) 12, Bulmosan-ro 10beon-gil, Changwon, 642-120, Republic of Korea. * Corresponding authors, E-mail: mhsong@unist.ac.kr, jthan@keri.re.kr
Figure S1. Photo imaged of (a) graphite oxide foam after freeze-drying, (b) AFM image of GO nanosheet on Si wafer, (c) height profiles along the lines indicated and (d) GO dispersion in water. (e) FT-IR and (f) XPS spectrum of GO nanosheets.
Figure S2. (a) Raman spectra of the PEDOT:PSS and of well dispersed PEDOT:GO composite layers. (b) The chemical structure of benzoid-quinoid transition.
Figure S3. PLEDs light-emitting characterization (a) current density vs applied voltage (J- V), (b) luminance vs the applied voltage (L-V), (c) luminous efficiency vs the applied voltage (LE-V), (d) power efficiency vs the applied voltage (PE-V), (e) external quantum efficiency vs the applied voltage (EQE-V) curves of PEDOT:PSS for different volume ratio of GO (ph3) content as hole transport layer, and (f) electroluminescence (EL) spectra of PLEDs.
Figure S4. PLEDs light-emitting characterization (a) current density vs applied voltage (J- V), (b) luminance vs the applied voltage (L-V), (c) luminous efficiency vs the applied voltage (LE-V), (d) power efficiency vs the applied voltage (PE-V), (e) external quantum efficiency vs the applied voltage (EQE-V) curves of PEDOT:PSS for different volume ratio of C-GO (ph9) content as hole transport layer, and (f) electroluminescence (EL) spectra of PLEDs.
Figure S5. J-V characteristic of PSCs with the well-dispersed PEDOT:GO composite, the aggregated PEDOT:GO composite and the PEDOT:PSS hole transport layers as HTL in the dark.
Figure S6. The log J vs. log V characteristics of hole only devices with the PEDOT:PSS and of the well-dispersed PEDOT:GO composite layers were fitted with the Mott-Gurney SCLC model ( ).
Table S1. Summarized the conductivities of the PEDOT:PSS and the well-dispersed PEDOT:GO composite films on bare glass. Device Configuration Conductivity (S/cm) Glass/PEDOT:PSS 0.0044 Glass/PEDOT:C-GO (ph9) 0.013
Table S2. Summarized device performances of PLEDs with PEDOT:PSS and PEDOT:GO (ph3) at different concentrations. Devices configuration L max [cd/m 2 ] LE max [cd/a] PE max [lm/w] EQE max [%] Turn-on Voltage [V] ITO / PEDOT:PSS/ SY / LiF / Al 52900 (11.8V) 10.73 (6.6V) 6.33 (4.0V) 3.88 (6.6V) 2.2 ITO / PEDOT:GO(1:0.005)/ SY / LiF / Al 59900 (11.6V) 11.31 (7.0V) 6.57 (4.2V) 4.06 (7.0V) 2.2 ITO / PEDOT:GO(1:0.01)/ SY / LiF / Al 57800 (11.8V) 11.83 (7.0V) 6.96 (4.0V) 4.28 (7.0V) 2.2 ITO / PEDOT:GO(1:0.05)/ SY / LiF / Al 60500 (11.6V) 13.10 (6.8V) 7.96 (4.0V) 4.69 (6.8V) 2.2 ITO / PEDOT:GO(1:0.1)/ SY / LiF / Al 65400 (11.2V) 13.62 (6.4V) 9.29 (3.6V) 4.88 (6.4V) 2.2 ITO / PEDOT:GO(1:0.5)/ SY / LiF / Al 74600 (11.2V) 14.16 (6.4V) 10.57 (3.4V) 5.06 (6.4V) 2.2 ITO / PEDOT:GO(1:1)/ SY / LiF / Al 54300 (11.8V) 13.22 (6.8V) 8.16 (3.8V) 4.81 (6.8V) 2.2 ITO / PEDOT:GO(1:2)/ SY / LiF / Al 61700 (11.2V) 11.42 (6.4V) 7.32 (3.8V) 4.08 (6.4V) 2.2
Table S3. Summarized device performances of PLEDs with PEDOT:PSS and PEDOT:C-GO (ph9) at different concentrations. Devices configuration L max [cd/m 2 ] LE max [cd/a] PE max [lm/w] EQE max [%] Turn-on Voltage [V] ITO / PEDOT:PSS/ SY / LiF / Al 78500 (12.0V) 12.04 (7.2V) 6.27 (4.2V) 4.41 (7.2V) 2.2 ITO / PEDOT:PSS:C-GO(1:0.01)/ SY / LiF / Al ITO / PEDOT:PSS:C-GO(1:0.05)/ SY / LiF / Al ITO / PEDOT:PSS:C-GO(1:0.1)/ SY / LiF / Al ITO / PEDOT:PSS:C-GO(1:0.5)/ SY / LiF / Al 72300 (12.4V) 12.95 (7.0V) 7.41 (4.0V) 4.70 (7.0V) 2.2 80700 (12.4V) 14.94 (7.0V) 7.79 (4.4V) 5.38 (7.0V) 2.2 87300 (12.0V) 16.95 (7.0V) 10.25 (4.0V) 5.97 (7.0V) 2.2 91000 (12.2V) 18.66 (7.0V) 11.45 (4.0V) 6.63 (7.0V) 2.2 ITO / PEDOT:PSS:C-GO(1:1)/ SY / LiF / Al 73300 (12.8V) 15.02 (6.8V) 8.60 (4.0V) 5.38 (6.8V) 2.2 ITO / PEDOT:PSS:C-GO(1:2)/ SY / LiF / Al 69400 (12.2V) 13.32 (7.4V) 7.67 (4.0V) 4.74 (7.4V) 2.2
Table S4. The hole mobility of different device configuration and the parameters necessary for Mott-Gurney SCLC model fitting. Device Configuration Hole mobility (cm 2 /Vs) ITO/PEDOT:PSS/SY/MoO 3 /Au 2.308 X 10-7 ITO/PEDOT:C-GO (ph9)/sy/moo 3 /Au 1.328 X 10-6