NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, F = 0.9 db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according AEC Q0 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package RHs =B =E =C SOT Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO V Collectoremitter voltage V CES 0 Collectorbase voltage V CBO 0 Emitterbase voltage V EBO Collector current I C 65 ma Base current I B 5 Total power dissipation ) T S 56 C P tot 450 mw Junction temperature T j 50 C Ambient temperature T A 65... 50 Storage temperature T stg 65... 50 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 0 K/W Pbcontaining package may be available upon special request T S is measured on the collector lead at the soldering point to the pcb For calculation of R thja please refer to Application Note Thermal Resistance 00700
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V I C = ma, I B = 0 Collectoremitter cutoff current I CES 00 µa V CE = 0 V, V BE = 0 Collectorbase cutoff current I CBO 00 na V CB = 0 V, I E = 0 Emitterbase cutoff current I EBO µa V EB = V, I C = 0 DC current gain I C = 5 ma, V CE = 8 V, pulse measured h FE 70 00 40 00700
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 6 8 GHz I C = 5 ma, V CE = 8 V, f = 500 MHz Collectorbase capacitance V CB = 0 V, f = MHz, V BE = 0, emitter grounded C cb 0.46 0.7 pf Collector emitter capacitance V CE = 0 V, f = MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = MHz, V CB = 0, collector grounded Noise figure I C = 5 ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz I C = 5 ma, V CE = 8 V, Z S = Z Sopt, f =.8 GHz C ce 0.4 C eb F 0.9.4 db Power gain, maximum stable ) I C = 5 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz Power gain, maximum available ) I C = 5 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f =.8 GHz Transducer gain I C = 5 ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 900 MHz I C = 5 ma, V CE = 8 V, Z S = Z L = 50 Ω, f =.8 MHz G ms 8.5 db G ma db S e db 5 9.5 G ms = S / S G ma = S e / S e (k(k²) / ), 00700
SPICE Parameter (GummelPoon Model, BerkleySPICE G.6 Syntax): Transistor Chip Data: IS =.045 fa VAF = 4.77 V NE =.49 VAR =.476 V NC = 0.85 RBM =.0 Ω CJE =.077 ff TF =.746 ps ITF =.877 ma VJC =.967 V TR =.055 ns MJS = 0 XTI = BF = 5.98 IKF = 0.456 A BR = 0.06 IKR = 0.048 A RB =.546 Ω RE =.45 VJE =.079 V XTF = 0.68 PTF = 0 deg MJC = 0. CJS = 0 ff XTB = 0 FC = 0.5485 NF = 0.80799 ISE = 6.88 fa NR = 0.9954 ISC =.559 fa IRB = 0.480 ma RC = 0.0486 Ω MJE = 0.4554 VTF = 0.50905 V CJC = 460. ff XCJC = 0.058 VJS = 0.75 V EG =. ev TNOM 00 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = 0.57 nh L BO = 0.4 nh L EI = 0.4 nh L EO = 0.5 nh L CI = 0 nh L CO = 0.4 nh C BE = 6 ff C CB = 0 ff C CE = 75 ff Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CDROM or see Internet: http://www.infineon.com 4 00700
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 500 mw 0 K/W Ptot 400 50 00 RthJS 0 50 00 50 00 50 0 0 0 0.5 0. 0. 0.05 0.0 0.0 0.005 D = 0 0 0 0 40 60 80 00 0 C 50 T S 0 0 6 0 5 0 4 0 0 s 0 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) 0 Ptotmax/PtotDC 0 0 D = 0 0.005 0.0 0.0 0.05 0. 0. 0.5 0 0 0 6 0 5 0 4 0 0 s 0 0 t p 5 00700
Package SOT Package Outline ±0. 0. +0. 0.05 x 0. M 0. MAX. 0. 0.9 ±0. A.±0. 0. MIN. 0.5 +0. 0.05.5 ±0. 0. M A Foot Print 0.6 Marking Layout (Example) Standard Packing Reel ø80 mm =.000 Pieces/Reel Reel ø0 mm = 0.000 Pieces/Reel 4 0.. 8 0.8.6 Manufacturer 005, June Date code (YM) Pin BCR08W Type code Pin.5. 6 00700
Edition 00600 Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 00700