NPN Silicon RF Transistor For lownoise, high gain broadband amplifiers at collector currents from ma to 0 ma Pbfree (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package Rs =B =E =C SOT Maximum Ratings at T A = 5 C, unless otherwise specified Parameter Symbol Value Unit Collectoremitter voltage V CEO V Collectoremitter voltage V CES 0 Collectorbase voltage V CBO 0 Emitterbase voltage V EBO Collector current I C 90 ma Base current I B 9 Total power dissipation ) T S 06 C P tot 00 mw Junction temperature T J 50 C Ambient temperature T A 65... 50 Storage temperature T Stg 65... 50 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 45 K/W T S is measured on the collector lead at the soldering point to the pcb For calculation of R thja please refer to Application Note AN077 (Thermal Resistance Calculation) 0065
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V I C = ma, I B = 0 Collectoremitter cutoff current I CES 00 µa V CE = 0 V, V BE = 0 Collectorbase cutoff current I CBO 00 na V CB = 0 V, I E = 0 Emitterbase cutoff current I EBO 0 µa V EB =.5 V, I C = 0 DC current gain I C = 0 ma, V CE = 8 V, pulse measured h FE 70 00 40 0065
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency I C = 0 ma, V CE = 8 V, f = 500 MHz f T 4.5 6 GHz Collectorbase capacitance V CB = 0 V, f = MHz, V BE = 0, emitter grounded Collector emitter capacitance V CE = 0 V, f = MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = MHz, V CB = 0, collector grounded C cb 0.54 0.8 pf C ce 0.5 C eb.9 Minimum noise figure NF min db I C = 5 ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz.5 I C = 5 ma, V CE = 8 V, Z S = Z Sopt, f =.8 GHz.6 Power gain, maximum available ) G ma I C = 0 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz 4.5 I C = 0 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f =.8 GHz 9.5 Transducer gain S e db I C = 0 ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 900 MHz.5 I C = 0 ma, V CE = 8 V, Z S = Z L = 50 Ω, f =.8 MHz 7 Gma = Se / Se (k(k²) / ) 0065
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 400 0 mw K/W 00 Ptot 50 RthJS 0 00 50 00 50 0 0.5 0. 0. 0.05 0.0 0.0 0.005 D = 0 0 0 5 0 45 60 75 90 05 0 C 50 T S 0 0 0 7 0 6 0 5 0 4 0 0 s 0 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) 0 Ptotmax/PtotDC 0 D = 0 0.005 0.0 0.0 0.05 0. 0. 0.5 0 0 0 7 0 6 0 5 0 4 0 0 s 0 0 t p 4 0065
Package SOT Package Outline +0. ) 0.4 0.05.9 ±0..9 B C 0.95.4 ±0.5 0.5 MIN. 0 MAX. ±0. 0. MAX. 0...8 0 MAX. 0.08...0.5. ±0. A 0.5 M BC 0. M A Foot Print ) Lead width can be 0.6 max. in dambar area 0.8 0.8. 0.9. 0.9 Marking Layout (Example) EH s Manufacturer 005, June Date code (YM) Pin BCW66 Type code Standard Packing Reel ø80 mm =.000 Pieces/Reel Reel ø0 mm = 0.000 Pieces/Reel 4 0.9 0. 8..65 Pin.5.5 5 0065
Edition 0096 Published by Infineon Technologies AG 876 Munich, Germany 009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 0065