NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 9 GHz, F = db at GHz Pbfree (RoHS compliant) package ) Qualified according AEC Q0 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package RK = B = E = C TSLP Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO 0 V Collectoremitter voltage V CES 0 Collectorbase voltage V CBO 0 Emitterbase voltage V EBO.5 Collector current I C 50 ma Base current I B 5 Total power dissipation ) T S 0 C P tot 50 mw Junction temperature T j 50 C Ambient temperature T A 65... 50 Storage temperature T stg 65... 50 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 95 K/W Pbcontaining package may be available upon special request T S is measured on the collector lead at the soldering point to the pcb For calculation of R thja please refer to Application Note Thermal Resistance 007046
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO 0 V I C = ma, I B = 0 Collectoremitter cutoff current I CES 00 µa V CE = 0 V, V BE = 0 Collectorbase cutoff current I CBO 00 na V CB = 0 V, I E = 0 Emitterbase cutoff current I EBO 0. µa V EB = V, I C = 0 DC current gain I C = 5 ma, V CE = 6 V, pulse measured h FE 00 40 80 007046
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 7 9 GHz I C = 5 ma, V CE = 6 V, f = GHz Collectorbase capacitance V CB = 0 V, f = MHz, V BE = 0, emitter grounded C cb 0.5 0.4 pf Collector emitter capacitance V CE = 0 V, f = MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = MHz, V CB = 0, collector grounded Noise figure I C = 5 ma, V CE = 6 V, Z S = Z Sopt, f = GHz I C = ma, V CE = 8 V, Z S = Z Sopt, f =.8 GHz C ce 0.5 C eb 0.7 F..5 db Power gain ) I C = 0 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz Power gain, maximum available ) I C = 0 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f =.8 GHz Transducer gain I C = 5 ma, V CE = 6 V, Z S = Z L = 50Ω, f = GHz I C = 0 ma, V CE = 8 V, Z S = Z L = 50Ω, f =.8 GHz G ms.5 G ma 5.5 db S e db 4 7 G ma = S / S (k(k²) / ), G ms = S / S 007046
Package TSLP Package Outline Top view Bottom view 0.05 MAX. 0.4 +0. 0.6 ±0.05 ) 0.5 ±0.05 0.65 ±0.05 ) 0.5 ±0.05 ±0.05 Pin marking ) Dimension applies to plated terminal 0.5 ±0.05 ) x0.5 ±0.05 Foot Print For board assembly information please refer to Infineon website "Packages" 0.5 0.5 Copper Solder mask Stencil apertures Marking Layout (Example) BFR9L Type code Pin marking Laser marking Standard Packing Reel ø80 mm = 5.000 Pieces/Reel 4 0.5.6 8 ) x0.5 ±0.05 0.6 0.5 0.5 0. 0.5 0.945 0.45 0.75 0.55 0. R0. 0. 0.7 0.5 Pin marking 0.76 4 007046
Edition 00600 Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 5 007046