NPN Silicon RF Transistor For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 ma to 30 ma 3 1 2 Pbfree (RoHS compliant) package Qualified according AEC Q1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package R2s 1=B 2=E 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO 12 V Collectoremitter voltage V CES 20 Collectorbase voltage V CBO 20 Emitterbase voltage V EBO 2 Collector current I C 90 ma Base current I B 9 Total power dissipation 1) T S 4 C P tot 300 mw Junction temperature T J 150 C Ambient temperature T A 65... 150 Storage temperature T Stg 65... 150 Thermal Resistance Parameter Symbol Value Unit Junction soldering point 2) R thjs 155 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thja please refer to Application Note AN077 Thermal Resistance 1
Electrical Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO 12 V I C = 1 ma, I B = 0 Collectoremitter cutoff current I CES 0 µa V CE = 20 V, V BE = 0 Collectorbase cutoff current I CBO 0 na V CB = V, I E = 0 Emitterbase cutoff current I EBO µa V EB = 2 V, I C = 0 DC current gain I C = 30 ma, V CE = 8 V, pulse measured h FE 70 0 140 2
Electrical Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 4.5 6 GHz I C = 30 ma, V CE = 8 V, f = 500 MHz Collectorbase capacitance V CB = V, f = 1 MHz, V BE = 0, emitter grounded C cb 0.58 0.8 pf Collector emitter capacitance V CE = V, f = 1 MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = 1 MHz, V CB = 0, collector grounded Minimum noise figure I C = 5 ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz I C = 5 ma, V CE = 8 V, Z S = Z Sopt, f = 1.8 GHz C ce 0.3 C eb 1.9 NF min 1.5 2.6 db Power gain, maximum available 1) G ma I C = 30 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz 15.5 I C = 30 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 1.8 GHz.5 Transducer gain S 21e 2 db I C = 30 ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 900 MHz 13 I C = 30 ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 1.8 MHz 7.5 1 G ma = S 21e / S 12e (k(k²1) 1/2 ) 3
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 400 3 mw K/W 300 Ptot 250 RthJS 2 200 150 0 50 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 0 0 20 40 60 80 0 120 C 150 T S 0 7 6 5 4 3 2 s 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) 2 Ptotmax/PtotDC 1 D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 7 6 5 4 3 2 s 0 t p 4
SPICE Parameter For the SPICE Gummel Poon (GP) model as well as for the Sparameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. 5
Package SOT323 Package Outline 2 ±0.2 0.3 +0.1 0.05 3 3x 0.1 M 0.1 MAX. 0.1 0.9 ±0.1 A 1 2 0.65 0.65 2.1±0.1 0.1 MIN. 0.15 +0.1 0.05 1.25 ±0.1 0.2 M A Foot Print 0.6 Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm =.000 Pieces/Reel 4 0.2 2.3 8 0.8 1.6 0.65 0.65 Manufacturer 2005, June Date code (YM) Pin 1 BCR8W Type code Pin 1 2.15 1.1 6
Datasheet Revision History: 9 August 20 This datasheet replaces the revision from 26 April 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revision 26 April 2007 Page Subject (changes since last revision) 1 Datasheet has final status 2,3 Bias conditions for I EBO and f T corrected 4 SPICE model parameters removed from the datasheet, respective link to the internet site added 7
Edition 20091116 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8