Small Gage Pressure Sensor

Similar documents
Small, Gauge Pressure Sensor

Small Absolute Pressure Sensor

OEM Silicon Pressure Die

Low Pressure Sensor Amplified Analog Output SM6295-BCM-S

Medium Pressure Sensor Analog Output

SM98A Harsh Media Backside Absolute Pressure Series

IntraSense TM Series 1-French Wire-Connected Pressure Sensor SMI-1A AAUU

IntraSense TM Series 1-French Wire-Connected Pressure Sensor Standard IntraSense TM Families

V N (8) V N (7) V N (6) GND (5)

BAT54XV2 Schottky Barrier Diode

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88

NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual

BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE

FFSP0665A/D. Silicon Carbide Schottky Diode 650 V, 6 A Features. FFSP0665A Silicon Carbide Schottky Diode. Description.

FFSH2065BDN-F085. Silicon Carbide Schottky Diode, 650 V, 20 A

Features. T A =25 o C unless otherwise noted

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

FFSH15120A/D. Silicon Carbide Schottky Diode 1200 V, 15 A Features. FFSH15120A Silicon Carbide Schottky Diode. Description.

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

FFSD08120A/D. Silicon Carbide Schottky Diode 1200 V, 8 A Features. FFSD08120A Silicon Carbide Schottky Diode. Description.

S3A - S3N General-Purpose Rectifiers

NL17SV16. Ultra-Low Voltage Buffer

SN74LS157MEL. Quad 2 Input Multiplexer LOW POWER SCHOTTKY

Operating Characteristics Table 1. Operating Characteristics (V S = 3.0 Vdc, T A = 25 C unless otherwise noted, P1 > P2) Characteristic Symbol Min Typ

2N7002DW N-Channel Enhancement Mode Field Effect Transistor

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes

SN74LS157MEL LOW POWER SCHOTTKY

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

The MC10107 is a triple 2 input exclusive OR/NOR gate. P D = 40 mw typ/gate (No Load) t pd = 2.8 ns typ t r, t f = 2.

NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor

SN74LS132MEL. Quad 2 Input Schmitt Trigger NAND Gate LOW POWER SCHOTTKY

FFSH40120ADN-F155 Silicon Carbide Schottky Diode

MC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays

FFSH30120A. Silicon Carbide Schottky Diode 1200 V, 30 A

FPF1007-FPF1009 IntelliMAX Advanced Load Products

FFSH20120ADN-F085. Silicon Carbide Schottky Diode 1200 V, 20 A

onlinecomponents.com

MARKING DIAGRAMS 16 LOGIC DIAGRAM DIP PIN ASSIGNMENT TRUTH TABLE ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620 MC10173L AWLYYWW

PN2907 / MMBT2907 PNP General-Purpose Transistor

NTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)

LOW POWER SCHOTTKY. ESD > 3500 Volts. GUARANTEED OPERATING RANGES ORDERING INFORMATION V CC 8 7 GND

NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m

SN74LS125A, SN74LS126A. Quad 3 State Buffers LOW POWER SCHOTTKY. LS125A LS126A TRUTH TABLES ORDERING INFORMATION

MARKING DIAGRAMS 16 LOGIC DIAGRAM DIP PIN ASSIGNMENT CLOCKED TRUTH TABLE ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620

SN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY

NCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit

NTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon

Compound Coefficient Pressure Sensor PSPICE Models

MARKING DIAGRAMS 16 LOGIC DIAGRAM DIP PIN ASSIGNMENT CLOCKED TRUTH TABLE ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620

MMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS

NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj

SN74LS74AMEL LOW POWER SCHOTTKY

NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj

74VHC08 Quad 2-Input AND Gate

NE522 High Speed Dual Differential Comparator/Sense Amp

SN74LS147, SN74LS Line to 4 Line and 8 Line to 3 Line Priority Encoders LOW POWER SCHOTTKY

NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V

Features. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.

NLSV2T Bit Dual-Supply Inverting Level Translator

1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES VOLTS

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

74AC00, 74ACT00 Quad 2-Input NAND Gate

MARKING DIAGRAMS LOGIC DIAGRAM DIP PIN ASSIGNMENT TRUTH TABLE ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620 MC10161L AWLYYWW

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V

MARKING DIAGRAMS LOGIC DIAGRAM DIP PIN ASSIGNMENT ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620 MC10138L AWLYYWW

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS

Is Now Part of To learn more about ON Semiconductor, please visit our website at

FFS50120AF-DIE. Silicon Carbide Schottky Diode 1200 V, 50 A

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

FDG6322C Dual N & P Channel Digital FET

SN74LS151MEL. 8 Input Multiplexer LOW POWER SCHOTTKY

NGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj

NGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

NL17SZ08. Single 2-Input AND Gate

RS1A - RS1M Fast Rectifiers

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209. Silicon Tuning Diodes pf, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES

NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features

Is Now Part of To learn more about ON Semiconductor, please visit our website at

MC Bit Magnitude Comparator

NL17SH02. Single 2-Input NOR Gate

NTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.)

LV5217GP. Specifications. Bi-CMOS IC 3ch LED Driver. Absolute Maximum Ratings at Ta = 25 C. Ordering number : ENA0833A.

MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS

MMBT2369A NPN Switching Transistor

LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION

FDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET

SN74LS138MEL LOW POWER SCHOTTKY

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

NGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj

Features. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D

Transcription:

Small Gage Pressure Sensor FEATURES Improved stability with integrated field shields Small SO8 surface-mount package 90 millivolt output Constant current or constant voltage drive Ported configuration Wide operating temperature range (-40 to +125 C) DESCRIPTION The GGG Series is a small outline SO8 packaged pressure sensor that incorporates SMI s new SM3020 MEMS piezoresistive pressure sensing die. The GGG Series has been optimized to provide the highest possible accuracy for a package of this size. Performance is achieved through careful resistor placement and mechanical configuration along with advanced MEMS processing. The GGG Series is in a ported package. Itcan be used to sense pressure in a manifold configuration with an O-ring seal. TheGGGSeriesisshipped intape&reel. The packaged sensor is intended for high volume applications where cost is a critical factor, such as industrial and medical products. Samples of the GGG Series are available as a gage pressure sensors in several pressure ranges. It is designed to be surface-mounted on ceramic or PC board substrates by high-volume OEM manufacturers. Industrial Consumer Medical Handheld Meters Sports Equipment Wound Therapy Pneumatic Gauges Appliances Health Monitoring Pressure Switches Blood Pressure Bioreactors Page 1

ABSOLUTE MAXIMUM RATING TABLE All parameters are specified at V DD = 5.00 V DC SUPPLY at 25 o C, unless otherwise noted. No. Characteristic Symbol Minimum Typical Maximum Units 1 Supply Voltage V DD 0.0 10 V 2 Operating Temperature Range T OP -40 +125 C 3 Storage Temperature Range T STG -40 - +125 C No. Product Number Operating Pressure 4a SM5G-GGG-T-100M-000 0-1.5 PSI 4b SM5G-GGG-T-005S-000 0-5 PSI 4c SM5G-GGG-T-015S-000 0-15 PSI 4d SM5G-GGG-T-030S-000 0-30 PSI 4e SM5G-GGG-T-080S-000 0-80 PSI Proof Pressure (P PROOF ) TBD Burst Pressure (B BURST ) TBD OPERATING CHARACTERISTICS TABLE All parameters are specified at V DD = 5.0 V DC SUPPLY at 25 C, unless otherwise noted. No. Characteristic Symbol Minimum Typical Maximum Units 5 Span 1.5, 5, 15, 80 PSI (a, b) V SPAN 60 90 120 mv 30 PSI 55 80 105 mv 6 Zero Offset V ZERO -25 10 45 mv 7 TC Span (a, c, d) TCS -0.240-0.19-0.155 %FS/ o C 8 TC Zero Offset (a, c, d) TCZ -75-75 μv/ o C 9 TC Resistance (a, c, d ) TCR 0.24 0.275 0.33 %R B / C 10 Linearity (a, d) NL -0.3-0.3 %FS 11 Bridge Resistance R B 4.0 5.0 6.0 KΩ Notes: a. Tested on a sample basis b. The device can only be driven with the supply voltage connected to the pins as shown. c. Determined by measurements taken at -40 C and 125 C. d. Defined as best fit straight line. Page 2

Diagrams & Dimensions Page 3

Pin 1 Pin 8 Pin 2 Pin 7 Pin 3 Pin 6 Pin 4 Pin 5 Typical Operation Pin No. Description Type Value 2 +Sig Analog Out - 4 Gnd Gnd 0 V 6 -Sig Analog Out - 8 +Vexc Power +5 V Pin-Out PIN Description 1 NC 2 +Sig 3 NC 4 Gnd 5 NC 6 -Sig 7 NC 8 +Vexc Page 4

Ordering Information Order Code Pressure Type Full-Scale Pressure Range Cap Configuration Shipping Configuration SM5G-GGG-T-100M-000 1.5 PSI SM5G-GGG-T-005S-000 5 PSI SM5G-GGG-T-015S-000 Gage 15 PSI Port Tape & Reel SM5G-GGG-T-030S-000 30 PSI SM5G-GGG-T-080S-000 80 PSI Part Number Legend Qualification Standards REACH compliant RoHS compliant PFOS/PFOA compliant For qualification specifications please contact Sales at sales@si-micro.com Page 5

Silicon Microstructures Warranty and Disclaimer: Silicon Microstructures, Inc. reserves the right to make changes without further notice to any products herein and to amendthecontentsofthisdatasheetatanytimeandatitssolediscretion. Information in this document is provided solely to enable software and system implementers to use Silicon Microstructures, Inc. products and/or services. No express or implied copyright licenses are granted hereunder to design or fabricate any silicon-based microstructures based on the information in this document. Silicon Microstructures, Inc. makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Silicon Microstructures, Inc. assume any liability arising out of the application or use of any product or silicon-based microstructure, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Silicon Microstructure s data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. Silicon Microstructures, Inc. does not convey any license under its patent rights nor the rights of others. Silicon Microstructures, Inc. makes no representation that the circuits are free of patent infringement. Silicon Microstructures, Inc. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Silicon Microstructures, Inc. product could create a situation where personal injury or death may occur. Should Buyer purchase or use Silicon Microstructures, Inc. products for any such unintended or unauthorized application, Buyer shall indemnify and hold Silicon Microstructures, Inc. and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Silicon Microstructures, Inc. was negligent regarding the design or manufacture of the part. Silicon Microstructures, Inc. warrants goods of its manufacture as being free of defective materials and faulty workmanship. Silicon Microstructures, Inc. standard product warranty applies unless agreed to otherwise by Silicon Microstructures, Inc. in writing; please refer to your order acknowledgement or contact Silicon Microstructures, Inc. directly for specific warranty details. If warranted goods are returned to Silicon Microstructures, Inc. during the period of coverage, Silicon Microstructures, Inc. will repair or replace, at its option, without charge those items it finds defective. The foregoing is buyer s sole remedy and is in lieu of all warranties, expressed or implied, including those of merchantability and fitness for a particular purpose. In no event shall Silicon Microstructures, Inc. be liable for consequential, special, or indirect damages. While Silicon Microstructures, Inc. provides application assistance personally, through its literature and the Silicon Microstructures, Inc. website, it is up to the customer to determine the suitability of the product for its specific application. The information supplied by Silicon Microstructures, Inc. is believed to be accurate and reliable as of this printing. However, Silicon Microstructures, Inc. assumes no responsibility for its use. Silicon Microstructures, Inc. assumes no responsibility for any inaccuracies and/or errors in this publication and reserves the right to make changes without further notice to any products or specifications herein Silicon Microstructures, Inc.TM and the Silicon Microstructures, Inc. logo are trademarks of Silicon Microstructures, Inc. All other service or product names are the property of their respective owners.. Page 6