NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 ma to 80 ma Power amplifier for DECT and PCN systems f T = 7.5 GHz, F = 1.3 db at 900 MHz Pbfree (RoHS compliant) package 1) Qualified according AEC Q1 * Short term description 3 4 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package RIs 1 = E 2 = C 3 = E 4 = B SOT343 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO 12 V Collectoremitter voltage V CES 20 Collectorbase voltage V CBO 20 Emitterbase voltage V EBO 2 Collector current I C 150 ma Base current I B 15 Total power dissipation 2) T S 69 C P tot 700 mw Junction temperature T j 150 C Ambient temperature T A 55... 150 Storage temperature T stg 55... 150 Thermal Resistance Parameter Symbol Value Unit Junction soldering point 3) R thjs 115 K/W 1 Pbcontaining package may be available upon special request 2 T S is measured on the collector lead at the soldering point to the pcb 3 For calculation of R thja please refer to Application Note Thermal Resistance 1
Electrical Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO 12 V I C = 1 ma, I B = 0 Collectoremitter cutoff current I CES 0 µa V CE = 20 V, V BE = 0 Collectorbase cutoff current I CBO 0 na V CB = V, I E = 0 Emitterbase cutoff current I EBO 1 µa V EB = 1 V, I C = 0 DC current gain I C = 50 ma, V CE = 8 V, pulse measured h FE 70 0 140 2
Electrical Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 5 7.5 GHz I C = 70 ma, V CE = 8 V, f = 500 MHz Collectorbase capacitance V CB = V, f = 1 MHz, V BE = 0, emitter grounded C cb 0.86 1.3 pf Collector emitter capacitance V CE = V, f = 1 MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = 1 MHz, V CB = 0, collector grounded Noise figure I C = 20 ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz I C = 20 ma, V CE = 8 V, Z S = Z Sopt, f = 1.8 GHz C ce 0.4 C eb 3.9 F 1.3 2.3 db Power gain, maximum available 1) G ma I C = 50 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz 19 I C = 50 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 1.8 GHz 12.5 Transducer gain S 21e 2 db I C = 50 ma, V CE = 8 V, Z S = Z L = 50Ω, f = 900 MHz 13 I C = 50 ma, V CE = 8 V, Z S = Z L = 50Ω, f = 1.8 GHz 7 1 G ma = S 21 / S 12 (k(k²1) 1/2 ) 3
SPICE Parameter (GummelPoon Model, BerkleySPICE 2G.6 Syntax): Transistor Chip Data: IS = 1.7264 fa VAF = 20 V NE = 1.1766 VAR = 3.8128 V NC = 0.88299 RBM = 1 Ω CJE = 13.325 ff TF = 23.994 ps ITF = 1.9775 ma VJC = 0.73057 V TR = 2.2413 ns MJS = 0 XTI = 3 BF = 125 IKF = 0.4294 A BR =.584 IKR = 0.019551 A RB = 1.2907 Ω RE = 0.753 VJE = 0.7308 V XTF = 0.44322 PTF = 0 deg MJC = 0.3289 CJS = 0 ff NK = 0 FC = 0.50922 NF = 0.80012 ISE = 119.22 fa NR = 0.94288 ISC = 4.8666 fa IRB = 0.084011 ma RC = 0.27137 Ω MJE = 0.33018 VTF = 0.1 V CJC = 1667 ff XCJC = 0.29998 VJS = 0.75 V EG = 1.11 ev TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = 0.43 nh L BO = 0.47 nh L EI = 0.26 nh L EO = 0.12 nh L CI = 0.06 nh L CO = 0.36 nh C BE = 68 ff C CB = 46 ff C CE = 232 ff Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CDROM or see Internet: http://www.infineon.com 4
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 800 3 mw K/W 600 Ptot 500 RthJS 2 400 300 200 0 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 0 0 20 40 60 80 0 120 C 150 T S 0 7 6 5 4 3 2 s 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) 2 Ptotmax/PtotDC 1 D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 7 6 5 4 3 2 s 0 t p 5
Package SOT343 Package Outline 4 2 ±0.2 1.3 3 0.1 MAX. 0.1 0.9 ±0.1 A 0.3 +0.1 0.05 4x 0.1 M 0.15 1 2 +0.1 0.6 0.05 2.1 ±0.1 0.1 MIN. 0.2 M Foot Print 0.6 Marking Layout (Example) 2005, June Date code (YM) BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm =.000 Pieces/Reel 4 0.2 2.3 8 1.6 0.8 A 0.15 +0.1 0.05 1.25 ±0.1 1.15 0.9 Manufacturer Pin 1 Pin 1 2.15 1.1 6
Edition 20060201 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7
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