SMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U

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PNP Silicon Switching Transistors High D current gain:. ma to ma Low collectoremitter saturation voltage For SMBT96S and SMBT96U: Two (galvanic) internal isolated transistor with good matching in one package omplementary types: SMBT94...MMBT94 (NPN) SMBT94S / U: for orientation in reel see package information below Pbfree (RoHS compliant) package ) Qualified according AE Q SMBT96S/U B E 6 4 TR TR E B EHA77 Type Marking Pin onfiguration Package SMBT96/ MMBT96 sa =B =E = SOT SMBT96S sa =E =B = 4=E =B 6= SOT6 SMBT96U sa =E =B = 4=E =B 6= S74 Pbcontaining package may be available upon special request 89

Maximum Ratings Parameter Symbol Value Unit ollectoremitter voltage V EO 4 V ollectorbase voltage V BO 4 Emitterbase voltage V EBO 6 ollector current I ma Total power dissipation T S 7 T S tbd T S T S P tot mw Junction temperature T j Storage temperature T stg 6... Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs K/W SMBT96/ MMBT96 SMBT96S SMBT96U 4 4 For calculation of R thja please refer to Application Note Thermal Resistance 89

Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol Values Unit min. typ. max. D haracteristics ollectoremitter breakdown voltage I = ma, I B = V (BR)EO 4 V ollectorbase breakdown voltage I = µa, I E = Emitterbase breakdown voltage I E = µa, I = ollectorbase cutoff current V B = V, I E = D current gain ) I = µa, V E = V I = ma, V E = V I = ma, V E = V I = ma, V E = V I = ma, V E = V V (BR)BO 4 V (BR)EBO 6 I BO na h FE 6 8 6 ollectoremitter saturation voltage ) V Esat V I = ma, I B = ma. I = ma, I B = ma.4 Base emitter saturation voltage ) V BEsat I = ma, I B = ma.6.8 I = ma, I B = ma.9 Pulse test: t < µs; D < % 89

Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol Values Unit min. typ. max. A haracteristics Transition frequency f T MHz I = ma, V E = V, f = MHz ollectorbase capacitance cb. pf V B = V, f = MHz Emitterbase capacitance eb V EB =. V, f = MHz Delay time t d ns V = V, I = ma, I B = ma, V BE(off) =. V Rise time t r V = V, I = ma, I B = ma, V BE(off) =. V Storage time t stg V = V, I = ma, I B = I B = ma Fall time t f 7 V = V, I = ma, I B = I B = ma Noise figure I = µa, V E = V, f = khz, f = Hz, R S = kω F 4 db 4 89

Test circuit Delay and rise time. V 7 Ω <. ns +. V kω ns.6 V D = % <4. pf EHN9 Storage and fall time. V <. ns 7 Ω +9. V kω.9 V < t < µs t D = % N96 <4. pf EHN6 89

D current gain h FE = ƒ(i ) V E = V Saturation voltage I = ƒ(v BEsat ; V Esat ) h FE = EHP774 EHP767 ma h FE Ι V E V BE ma ollectorbase capacitance cb = ƒ(v B ) Emitterbase capacitance eb = ƒ(v EB ) Ι..4.6.8. V. V BE sat,v E sat Total power dissipation P tot = ƒ(t S ) SMBT96/ MMBT96 8 pf 6 mw VB/VEB 7 6. 6. Ptot 7 4 4. 8 4.. EB 9 6. B 4 8 6 V B / EB 4 6 7 9 T S 6 89

Total power dissipation P tot = ƒ(t S ) SMBT96S Total power dissipation P tot = ƒ(t S ) SMBT96U mw 6 mw 7 Ptot 7 Ptot 4 8 7 9 6 4 6 7 9 T S 4 6 7 9 T S Permissible Pulse Load P totmax /P totd = ƒ( ) Permissible Puls Load R thjs = ƒ ( ) SMBT96S EHP96 P P tot max tot D = D T T K/W D =....... RthJS....... D = 6 4 s 6 4 s 7 89

Permissible Pulse Load P totmax /P totd = ƒ( ) SMBT96S Permissible Puls Load R thjs = ƒ ( ) SMBT96U Ptotmax/PtotD D =....... RthJS K/W D=....... 6 4 s 6 4 s Permissible Pulse Load Delay time t d = ƒ(i ) P totmax /P totd = ƒ( ) Rise time t r = ƒ(i ) SMBT96U ns EHP77 Ptotmax /PtotD D=....... t r,t d t t r d h FE = V = V V 4 V V BE V = V 6 4 s ma Ι 8 89

Storage time t stg = ƒ(i ) Fall time t f = ƒ(i ) t s ns h FE = EHP76 t f ns EHP77 V = 4 V h FE = h FE = h FE = ma Ι ma Ι Rise time t r = ƒ(i ) t r ns EHP764 V h FE = 4 V = ma Ι 9 89

Package S74 Package Outline.9 ±. (.) B (.) +...6. MAX. Pin marking 6 4 +....9.9. M B 6x ±. ±... MAX.. M A MAX.. MAX..6 A ±. Foot Print..9.9.9 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer, June Date code (Year/Month) Pin marking Laser marking BW66H Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel For symmetric types no defined Pin orientation in reel. 4..7 8 Pin marking.. 89

Package SOT Package Outline +. ).4..9 ±..9 B.9.4 ±.. MIN. MAX. ±.. MAX....8 MAX..8.... ±. A. M B. M A Foot Print ) Lead width can be.6 max. in dambar area.8.8..9..9 Marking Layout (Example) EH s Manufacturer, June Date code (YM) Pin BW66 Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.9. 8..6 Pin.. 89

Package SOT6 Package Outline ±. +... 6 4 6x. M. MAX...9 ±. A Pin marking.6.6.±.. MIN. +... Foot Print..9.6.7.6.6 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer, June Date code (Year/Month) Pin marking Laser marking BR8S Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel For symmetric types no defined Pin orientation in reel. 4.. 8. ±.. M A Pin marking.. 89

Edition 6 Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 7. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies omponents may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 89