PNP Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBTA / MMBTA (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AE Q1 Type Marking Pin onfiguration Package sf 1 = B = E = SOT Maximum Ratings Parameter Symbol alue Unit ollectoremitter voltage EO 6 ollectorbase voltage BO 6 Emitterbase voltage EBO ollector current I 6 ma Base current I B Peak base current I BM Total power dissipation T S 77 P tot mw Junction temperature T j 1 Storage temperature T stg 6... 1 Thermal Resistance Parameter Symbol alue Unit Junction soldering point ) R thjs K/W 1 Pbcontaining package may be available upon special request For calculation of R thja please refer to Application Note Thermal Resistance 1 746
Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol alues Unit min. typ. max. D haracteristics ollectoremitter breakdown voltage I = ma, I B = (BR)EO 6 ollectorbase breakdown voltage I = µa, I E = Emitterbase breakdown voltage I E = µa, I = ollectorbase cutoff current B =, I E = B =, I E =, T A = 1 Emitterbase cutoff current EB =, I = D current gain 1) I = µa, E = I = 1 ma, E = I = ma, E = I = 1 ma, E = I = ma, E = (BR)BO 6 (BR)EBO I BO.1 µa I EBO na h FE 7 ollectoremitter saturation voltage 1) Esat I = 1 ma, I B = 1 ma.4 I = ma, I B = ma 1.6 Base emitter saturation voltage 1) BEsat I = 1 ma, I B = 1 ma 1. I = ma, I B = ma.6 1 Puls test: t µs, D = % 746
Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol alues Unit min. typ. max. A haracteristics Transition frequency f T MHz I = ma, E =, f = MHz ollectorbase capacitance cb 8 pf B =, f = 1 MHz Emitterbase capacitance eb EB =., f = 1 MHz Delay time t d ns =, I = 1 ma, I B1 = 1 ma, BE(off) =. Rise time t r 4 =, I = 1 ma, I B1 = 1 ma, BE(off) =. Storage time t stg 8 =, I = 1 ma, I B1 = I B = 1mA Fall time =, I = 1 ma, I B1 = I B = 1mA t f 746
Test circuit Delay and rise time Input Z = t r < ns 16 Ω 1 kω Ω Ω Osc. t r < ns ns EHN Storage and fall time Input Z = t < ns r Ω 1 kω Ω +1 1 kω Ω Osc. t r < ns ns EHN69 Oscillograph: R >, < 1pF, t r < ns 4 746
D current gain h FE = ƒ(i ) E = Saturation voltage I = ƒ( BEsat ; Esat ) h FE = SMBT 97/A EHP74 SMBT 97/A EHP7 ma h FE 1 E BE 1 1 ma 1 1 Transition frequency f T = ƒ(i ) E = 1..4.6.8 1. 1. 1.6 BE sat, E sat ollectorbase capacitance cb = ƒ( B ) Emitterbase capacitance eb = ƒ( EB ) MHz SMBT 97/A EHP749 pf f T B(EB) 6 4 18 16 14 1 8 6 EB 1 ma 1 4 B 4 8 1 16 B(EB 746
ollectorbase capacitance B = ƒ ( B ) f = 1MHz Total power dissipation P tot = ƒ(t S ) pf SMBT 97/A EHP747 6 mw cb 7 Ptot 4 1 18 1 9 6 1 1 Permissible Pulse Load P totmax /P totd = ƒ(t p ) B 1 4 6 7 9 1 T S Delay time t d = ƒ(i ) Rise time t r = ƒ(i ) SMBT 97/A EHP748 SMBT 97/A EHP71 P P tot max tot D t p = D T t p T t, r t d ns BE BE =, =, =, = 1 D =..1...1.. t r t d 6 4 s t p 1 1 ma 6 746
Storage time t stg = ƒ(i ) Fall time t f = ƒ(i ) SMBT 97/A EHP7 SMBT 97/A EHP7 t stg ns t f ns = h FE = h FE = h FE = h FE = 1 1 ma 1 ma 7 746
Package SOT Package Outline +.1 1).4..9 ±.1 1.9 1 B.9.4 ±.1.1 MIN. MAX. 1±.1.1 MAX....8 MAX..8...1 1. ±.1 A. M B. M A Foot Print 1) Lead width can be.6 max. in dambar area.8.8 1..9 1..9 Marking Layout (Example) EH s Manufacturer, June Date code (YM) Pin 1 BW66 Type code Standard Packing Reel ø18 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.9. 8.1.6 Pin 1.1 1.1 8 746
Edition 61 Published by Infineon Technologies AG 8176 München, Germany Infineon Technologies AG 7. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies omponents may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 746