Small Signal Zener Diodes FEATURES Very sharp reverse characteristic Low reverse current level Very high stability Low noise AEC-Q qualified Compliant to RoHS Directive 22/95/EC and in accordance to WEEE 22/96/EC PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT APPLICATIONS Voltage stabilization V Z range nom. 2.4 to 75 V Test current I ZT 2.5 to 5 ma V Z specification Int. construction Pulse current Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZT55-series BZT55-series-GS8 per 3" reel /box BZT55-series BZT55-series-GS8 25 per 7" reel 2 5/box PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING QuadroMELF SOD-8 34 mg UL 94 V- MOISTURE SENSITIVITY LEVEL MSL level (according J-STD-2) SOLDERING CONDITIONS 26 C/ s at terminals ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation R thja 3 K/W P tot 5 mw Zener current I Z P V /V Z ma Junction to ambient air On PC board 5 mm x 5 mm x.6 mm R thja 5 K/W Junction temperature T j 75 C Storage temperature range T stg - 65 to + 75 C Forward voltage (max.) I F = 2 ma V F.5 V Rev..7, 22-Nov- Document Number: 85637 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) ZENER VOLTAGE RANGE () TEST REVERSE LEAKAGE DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT I R at V R Z Z at I ZT Z ZK at I ZT2 PART NUMBER V Z at I ZT I ZT I ZT2 Tamb = T amb = 25 C 5 C f = khz TK VZ V ma μa V %/K MIN. NOM. MAX. MAX. MAX. MIN. MAX. BZT55C2V4 2.28 2.4 2.56 5 < 5 < < 85 < 6 -.9 -.6 BZT55C2V7 2.5 2.7 2.9 5 < < 5 < 85 < 6 -.9 -.6 BZT55C3V 2.8 3. 3.2 5 < 4 < 4 < 9 < 6 -.8 -.5 BZT55C3V3 3. 3.3 3.5 5 < 2 < 4 < 9 < 6 -.8 -.5 BZT55C3V6 3.4 3.6 3.8 5 < 2 < 4 < 9 < 6 -.8 -.5 BZT55C3V9 3.7 3.9 4. 5 < 2 < 4 < 9 < 6 -.8 -.5 BZT55C4V3 4 4.3 4.6 5 < < 2 < 9 < 6 -.6 -.3 BZT55C4V7 4.4 4.7 5 5 <.5 < < 8 < 6 -.5.2 BZT55C5V 4.8 5. 5.4 5 <. < 2 < 6 < 55 -.2.2 BZT55C5V6 5.2 5.6 6 5 <. < 2 < 4 < 45 -.5.5 BZT55C6V2 5.8 6.2 6.6 5 <. < 2 2 < < 2.3.6 BZT55C6V8 6.4 6.8 7.2 5 <. < 2 3 < 8 < 5.3.7 BZT55C7V5 7 7.5 7.9 5 <. < 2 5 < 7 < 5.3.7 BZT55C8V2 7.7 8.2 8.7 5 <. < 2 6.2 < 7 < 5.3.8 BZT55C9V 8.5 9. 9.6 5 <. < 2 6.8 < < 5.3.9 BZT55C 9.4.6 5 <. < 2 7.5 < 5 < 7.3. BZT55C.4.6 5 <. < 2 8.2 < 2 < 7.3. BZT55C2.4 2 2.7 5 <. < 2 9. < 2 < 9.3. BZT55C3 2.4 3 4. 5 <. < 2 < 26 <.3. BZT55C5 3.8 5 5.6 5 <. < 2 < 3 <.3. BZT55C6 5.3 6 7. 5 <. < 2 2 < 4 < 7.3. BZT55C8 6.8 8 9. 5 <. < 2 3 < 5 < 7.3. BZT55C2 8.8 2 2.2 5 <. < 2 5 < 55 < 22.3. BZT55C22 2.8 22 23.3 5 <. < 2 6 < 55 < 22.4.2 BZT55C24 22.8 24 25.6 5 <. < 2 8 < 8 < 22.4.2 BZT55C27 25. 27 28.9 5 <. < 2 2 < 8 < 22.4.2 BZT55C3 28 3 32 5 <. < 2 22 < 8 < 22.4.2 BZT55C33 3 33 35 5 <. < 2 24 < 8 < 22.4.2 BZT55C36 34 36 38 5 <. < 2 27 < 8 < 22.4.2 BZT55C39 37 39 4 2.5.5 <. < 5 3 < 9 < 5.4.2 BZT55C43 4 43 46 2.5.5 <. < 5 33 < 9 < 6.4.2 BZT55C47 44 47 5 2.5.5 <. < 5 36 < < 7.4.2 BZT55C5 48 5 54 2.5.5 <. < 39 < 25 < 7.4.2 BZT55C56 52 56 6 2.5.5 <. < 43 < 35 <.4.2 BZT55C62 58 62 66 2.5.5 <. < 47 < 5 <.4.2 BZT55C68 64 68 72 2.5.5 <. < 5 < 2 <.4.2 BZT55C75 7 75 79 2.5.5 <. < 56 < 25 < 5.4.2 Notes Additional measurement of voltage group 9V to 75 at 95 % V zmin. 35 na at T j 25 C () t p ms, T/t p > Rev..7, 22-Nov- 2 Document Number: 85637 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) ZENER VOLTAGE RANGE () TEST REVERSE LEAKAGE DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT I R at V R Z Z at I ZT Z ZK at I ZT2 PART NUMBER V Z at I ZT I ZT I ZT2 Tamb = T amb = 25 C 5 C f = khz TK VZ V ma μa V %/K MIN. NOM. MAX. MAX. MAX. MIN. MAX. BZT55B2V4 2.35 2.4 2.45 5 < 5 < < 85 < 6 -.9 -.6 BZT55B2V7 2.64 2.7 2.76 5 < < 5 < 85 < 6 -.9 -.6 BZT55B3V 2.94 3. 3.6 5 < 4 < 4 < 9 < 6 -.8 -.5 BZT55B3V3 3.24 3.3 3.36 5 < 2 < 4 < 9 < 6 -.8 -.5 BZT55B3V6 3.52 3.6 3.68 5 < 2 < 4 < 9 < 6 -.8 -.5 BZT55B3V9 3.82 3.9 3.98 5 < 2 < 4 < 9 < 6 -.8 -.5 BZT55B4V3 4.22 4.3 4.38 5 < < 2 < 9 < 6 -.6 -.3 BZT55B4V7 4.6 4.7 4.8 5 <.5 < < 8 < 6 -.5.2 BZT55B5V 5 5. 5.2 5 <. < 2 < 6 < 55 -.2.2 BZT55B5V6 5.48 5.6 5.72 5 <. < 2 < 4 < 45 -.5.5 BZT55B6V2 6.8 6.2 6.32 5 <. < 2 2 < < 2.3.6 BZT55B6V8 6.66 6.8 6.94 5 <. < 2 3 < 8 < 5.3.7 BZT55B7V5 7.35 7.5 7.65 5 <. < 2 5 < 7 < 5.3.7 BZT55B8V2 8.4 8.2 8.36 5 <. < 2 6.2 < 7 < 5.3.8 BZT55B9V 8.92 9. 9.28 5 <. < 2 6.8 < < 5.3.9 BZT55B 9.8.2 5 <. < 2 7.5 < 5 < 7.3. BZT55B.78.22 5 <. < 2 8.2 < 2 < 7.3. BZT55B2.76 2 2.24 5 <. < 2 9. < 2 < 9.3. BZT55B3 2.74 3 3.26 5 <. < 2 < 26 <.3. BZT55B5 4.7 5 5.3 5 <. < 2 < 3 <.3. BZT55B6 5.7 6 6.3 5 <. < 2 2 < 4 < 7.3. BZT55B8 7.64 8 8.36 5 <. < 2 3 < 5 < 7.3. BZT55B2 9.6 2 2.4 5 <. < 2 5 < 55 < 22.3. BZT55B22 2.55 22 22.45 5 <. < 2 6 < 55 < 22.4.2 BZT55B24 23.5 24 24.5 5 <. < 2 8 < 8 < 22.4.2 BZT55B27 26.4 27 27.6 5 <. < 2 2 < 8 < 22.4.2 BZT55B3 29.4 3 3.6 5 <. < 2 22 < 8 < 22.4.2 BZT55B33 32.4 33 33.6 5 <. < 2 24 < 8 < 22.4.2 BZT55B36 35.3 36 36.7 5 <. < 2 27 < 8 < 22.4.2 BZT55B39 38.2 39 39.8 2.5 <. < 5 3 < 9 < 5.4.2 BZT55B43 42. 43 43.9 2.5.5 <. < 5 33 < 9 < 6.4.2 BZT55B47 46. 47 47.9 2.5.5 <. < 5 36 < < 7.4.2 BZT55B5 5 5 52 2.5.5 <. < 39 < 25 < 7.4.2 BZT55B56 54.9 56 57. 2.5.5 <. < 43 < 35 <.4.2 BZT55B62 6.8 62 63.2 2.5.5 <. < 47 < 5 <.4.2 BZT55B68 66.6 68 69.4 2.5.5 <. < 5 < 2 <.4.2 BZT55B75 73.5 75 76.5 2.5.5 <. < 56 < 25 < 5.4.2 Notes Additional measurement of voltage group 9V to 75 at 95 % V zmin. 35 na at T j 25 C () t p ms, T/t p > Rev..7, 22-Nov- 3 Document Number: 85637 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) P tot - Total Power Dissipation (mw) 6 5 4 3 2 4 8 2 6 2 95 962 T amb - Ambient Temperature ( C) Fig. - Total Power Dissipation vs. Ambient Temperature TK VZ - Temperature Coefficient of V Z ( -4 /K) 95 96 5 5 I Z = 5 ma - 5 2 3 4 5 Fig. 4 - Temperature Coefficient of V Z vs. Z-Voltage 2 V Z - Voltage Change (mv) I Z = 5 ma C D - Diode Capacitance (pf) 5 5 V R = 2 V 95 9598 5 5 2 25 95 96 5 5 2 25 Fig. 2 - Typical Change of Working Voltage under Operating Conditions at T amb =25 C Fig. 5 - Diode Capacitance vs. Z-Voltage V Ztn - Relative Voltage Change.3 V Ztn = V Zt /V Z (25 C).2 TK VZ = x -4 /K 8 x -4 /K 6 x -4 /K. 4 x -4 /K 2 x -4 /K. - 2 x -4 /K - 4 x.9-4 /K.8-6 6 2 8 24 95 9599 T j - Junction Temperature ( C) I F - Forward Current (ma)....2.4.6.8 95 965 V F - Forward Voltage (V). Fig. 3 - Typical Change of Working Voltage vs. Junction Temperature Fig. 6 - Forward Current vs. Forward Voltage Rev..7, 22-Nov- 4 Document Number: 85637 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
I Z - Z-Current (ma) 8 6 4 2 P tot = 5 mw T amb = 25 C 4 6 8 2 2 95 964 r Z - Differential Z-Resistance (Ω) I Z = ma 5 ma ma 5 5 2 95 966 25 Fig. 7 - Z-Current vs. Z-Voltage Fig. 9 - Differential Z-Resistance vs. Z-Voltage 5 I Z - Z-Current (ma) 4 3 2 P tot = 5 mw T amb = 25 C 95 967 5 2 25 3 35 Fig. 8 - Z-Current vs. Z-Voltage Z thp - Thermal Resistance for Pulse Cond. (KW) t p /T =.5 t p /T =.2 Single Pulse R thja = 3 K/W T = T jmax - T amb t p /T =. t p /T =. t p /T =.2 t p /T =.5 i ZM = (- V Z + (V 2 Z + 4r zj x T/Z thp ) /2 )/(2r zj ) - 2 t p - Pulse Length (ms) 95 963 Fig. - Thermal Response Rev..7, 22-Nov- 5 Document Number: 85637 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-8 Cathode identification.7 (.67) glass.6 (.63).4 (.55).47 (.9) max. > R3 (R.8) glass 3.7 (.46) 3.3 (.3) The gap between plug and glass can be either on cathode or anode side Foot print recommendation:.25 (.49) min. 2.5 (.98) max. 2 (.79) min. 5 (.97) ref. 96 27 Rev..7, 22-Nov- 6 Document Number: 85637 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
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