DISCRETE SEMICONDUCTORS DATA SHEET age M3D6 Supersedes data of 997 Jun 7 2 Dec
FEATURES PINNING - TO-92 variant Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS PIN gate 2 drain 3 source DESCRIPTION Line current interruptor in telephone sets Relay, high-speed and line transformer drivers. DESCRIPTION in a TO-92 variant package. 2 3 MAM46 g d s Fig. Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage (DC) 3 V I D drain current (DC) 3 ma P tot total power dissipation T amb 25 C W V GSO gate-source voltage open drain ±2 V R DSon drain-source on-state resistance I D = 25 ma; V GS =V 6 Ω V GSoff gate-source cut-off voltage I D = ma; V GS =V DS.8 2 V LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 634). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage (DC) 3 V V GSO gate-source voltage (DC) open drain ±2 V I D drain current (DC) 3 ma I DM peak drain current.2 A P tot total power dissipation T amb 25 C; note W T stg storage temperature 55 +5 C T j operating junction temperature 5 C Note. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum mm x mm. 2 Dec 2
THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th j-a thermal resistance from junction to ambient; note 25 K/W Note. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum mm x mm. STATIC CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage I D =µa; V GS = 3 V I GSS gate-source leakage current V GS = ±2 V; V DS = ± na V GSth gate-source threshold voltage I D = ma; V DS =V GS.8 2 V R DSon drain-source on-state resistance I D = 25 ma; V GS =V 3.7 6 Ω I D = 2 ma; V GS = 2.4 V 4.8 Ω I DSS drain-source leakage current V DS = 24 V; V GS = na Y fs transfer admittance I D = 25 ma; V DS = 25 V 2 69 ms C iss input capacitance V DS = 25 V; V GS = ; f = MHz 2 pf C oss output capacitance V DS = 25 V; V GS = ; f = MHz 2 3 pf C rss feedback capacitance V DS = 25 V; V GS =; f = MHz 5 pf Switching times (see Figs 2 and 3) t on turn-on time I D = 25 ma; V DD =5V; 6 ns V GS = to V t off turn-off time I D = 25 ma; V DD =5V; V GS =tov 46 6 ns 2 Dec 3
V DD = 5 V INPUT 9 % % V V 5 Ω I D OUTPUT 9 % % MSA63 t on t off MBB692 Fig.2 Switching times test circuit. Fig.3 Input and output waveforms..2 P tot (W) MRC238 25 C (pf) 2 MLD765.8 5.4 C iss 5 5 5 2 T amb ( C) C oss C rss 2 3 V DS (V) V GS = ; f = MHz; T j =25 C. Fig.4 Power derating curve. Fig.5 Capacitance as a function of drain-source voltage; typical values. 2 Dec 4
.2 V GS = V I D (A) 5 V 4 V 3.5 V MLD766.2 I D (A) MLD767.8 3 V.8.4 2.5 V.4 2 V 4 8 2 V DS (V) 2 4 6 8 V GS (V) T j =25 C. V DS =V;T j =25 C. Fig.6 Typical output characteristics. Fig.7 Typical transfer characteristics. 3 R DSon (Ω) V GS = 2 V 2.5 V 3 V 3.5 V MLD768 2 R DSon (Ω) 5 MLD769 2 4 V 5 V V I D (A) 5 2 4 6 8 V GS (V) T j =25 C. V DS = mv; T j =25 C. Fig.8 Drain-source on-state resistance as a function of drain current; typical values. Fig.9 Drain-source on-state resistance as a function of gate-source voltage; typical values. 2 Dec 5
3 handbook, full pagewidth MRC24 Z th j-a (K/W) 2 δ =.5.2..5.2. P t p δ = T t p t T 5 4 3 2 2 3 t p (s) Fig. Transient thermal resistance from junction to ambient as a function of pulse time. I D (A) () MLD77 t p = µs µs ms ms 2 P t p δ = T DC ms s 3 t p T t 2 V DS (V) 3 δ =.; T amb =25 C. () R DSon limitation. Fig. SOAR curve. 2 Dec 6
2 k.5 () (2) MLD77.25 k MLD772.75.5.5.25 5 5 5 T j ( C) -5 5 5 T j ( C) R DS( on) at T j k = --------------------------------------------. R DS( on) at 25 C Typical R DSon ; () I D = 25 ma; V GS = V. (2) I D = 2 ma; V GS = 2.4 V. V GS( th) at T j k = -------------------------------------------. V GS( th) at 25 C Fig.2 Temperature coefficient of drain-source on-state resistance; typical values. Fig.3 Temperature coefficient of gate-source threshold voltage; typical values. 2 Dec 7
PACKAGE OUTLINES Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant c L 2 E d A L b D 2 e e 3 b L 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b c D d E e e L L () max L 2 max mm 5.2 5..48.4.66.56.45.4 4.8 4.4.7.4 4.2 3.6 2.54.27 4.5 2.7 2.5 2.5 Notes. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT54 variant TO-92 variant SC-43 98-3-26 2 Dec 8
DATA SHEET STATUS DATA SHEET STATUS () PRODUCT STATUS (2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-65A. Notes. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 634). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify for any damages resulting from such application. Right to make changes reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2 Dec 9
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