UvA-DARE (Digital Academic Repository) Different nanocrystal systems for carrier multiplication Nguyen, X.C. Link to publication Citation for published version (APA): Nguyen, X. C. (2017). Different nanocrystal systems for carrier multiplication General rights It is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), other than for strictly personal, individual use, unless the work is under an open content license (like Creative Commons). Disclaimer/Complaints regulations If you believe that digital publication of certain material infringes any of your rights or (privacy) interests, please let the Library know, stating your reasons. In case of a legitimate complaint, the Library will make the material inaccessible and/or remove it from the website. Please Ask the Library: http://uba.uva.nl/en/contact, or a letter to: Library of the University of Amsterdam, Secretariat, Singel 425, 1012 WP Amsterdam, The Netherlands. You will be contacted as soon as possible. UvA-DARE is a service provided by the library of the University of Amsterdam (http://dare.uva.nl) Download date: 23 Feb 2019
DIFFERENT NANOCRYSTAL SYSTEMS FOR CARRIER MULTIPLICATION Nguyen Xuan Chung - 2017 DIFFERENT NANOCRYSTAL SYSTEMS FOR CARRIER MULTIPLICATION Nguyen Xuan Chung - 2017
Dierent nanocrystal systems for carrier multiplication ACADEMISCH PROEFSCHRIFT ter verkrijging van de graad van doctor aan de Universiteit van Amsterdam op gezag van de Rector Magnicus prof. dr. ir. K.I.J. Maex ten overstaan van een door het College voor Promoties ingestelde commissie, in het openbaar te verdedigen in de Agnietenkapel op woensdag 26 april 2017, te 12:00 uur door Nguyen Xuan Chung geboren te Nam Dinh, Vietnam
Promotiecommisie: Promotor: Prof. dr. T. Gregorkiewicz Universiteit van Amsterdam Overige leden: Prof. dr. L.D.A. Siebbeles Technische Universiteit Delft Prof. dr. W.C. Sinke Universiteit van Amsterdam Dr. D.T.X. Thao Hanoi University of Mining and Geology Prof. dr. P. Schall Universiteit van Amsterdam Dr. A. de Visser Universiteit van Amsterdam Faculteit der Natuurwetenschappen, Wiskunde en Informatica. c 2017 by Nguyen Xuan Chung Email contact: xuanchung83@gmail.com. The research described in this thesis has been conducted in the Van der Waals - Zeeman Institute (WZI), University of Amsterdam (UvA), the Netherlands. For rst 3 years, the project was funded by the Vietnamese government scholarship - projects No. 322 and 911 and supported by the Stichting voor Fundamenteel Onderzoek der Materie (FOM) nanced by De Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO). The remaining 2 years were nanced by Stichting Voor de Technische Wetenschappen (STW).
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Contents 1 Introduction 1 1.1 Quantum dots............................... 1 1.1.1 Introduction............................ 1 1.1.2 Quantum connement...................... 2 1.2 Nanocrystal systems in this study.................... 3 1.2.1 Silicon nanocrystals....................... 4 1.2.2 Carbon quantum dots...................... 7 1.3 Carrier multiplication.......................... 10 1.3.1 Denition............................. 10 1.3.2 Recent studies.......................... 10 1.3.3 Auger recombination and carrier multiplication processes.. 10 1.3.4 Carrier multiplication for applications............. 12 1.4 This thesis................................. 13 2 Methodology for investigations of carrier multiplication 15 2.1 Absolute photoluminescence quantum yield.............. 15 2.1.1 Denition of the absolute photoluminescence quantum yield. 15 2.1.2 Absolute photoluminescence quantum yield measurements.. 16 2.1.3 Experimental procedure..................... 17 2.1.4 Possible artifacts in the PL QY measurement, and solutions to avoid them........................... 20 2.2 Relative photoluminescence quantum yield measurements...... 23 2.2.1 Using an integrating sphere in combination with a Ge detector 24 2.2.2 Setup without the integrating sphere.............. 26 2.3 Induced absorption spectroscopy and relative photoluminescence quantum yield................................. 28 2.3.1 Illustration of an experimental setup for induced absorption spectroscopy........................... 28 2.3.2 Relation between induced absorption and the relative photoluminescence quantum yield................... 30 2.4 Estimation of errors in photoluminescence quantum yield determination 31 2.4.1 The absolute photoluminescence quantum yield measurement 31 2.4.2 The relative photoluminescence quantum yield measurement. 32 2.5 Conclusion................................. 33
ii Contents 3 Photoluminescence quantum yield of silicon nanocrystals 35 3.1 Introduction................................ 35 3.2 Exploratory study: the role of the excess silicon concentration.... 36 3.2.1 Samples.............................. 36 3.2.2 Results and discussion...................... 36 3.3 Investigation of excitation energy dependence of photoluminescence quantum yield in the Si nanocrystal layers............... 39 3.3.1 Sample preparation........................ 39 3.3.2 Experimental methods...................... 41 3.3.3 Experimental results....................... 41 3.3.4 Discussion............................. 44 3.3.5 Additional remarks........................ 50 3.3.6 Conclusions............................ 55 3.3.7 Summary............................. 56 4 Co-doped silicon nanocrystals and carrier multiplication 57 4.1 Introduction................................ 57 4.2 Preliminary study: A ngerprint of carrier multiplication in induced absorption spectroscopy......................... 58 4.2.1 Samples.............................. 58 4.2.2 Experiment............................ 58 4.2.3 Results and discussion...................... 59 4.2.4 Conclusions............................ 62 4.3 Detailed investigation of carrier multiplication in phosphor and boron co-doped silicon nanocrystals...................... 62 4.3.1 Experiments............................ 62 4.3.2 Results and discussion...................... 64 4.3.3 Induced absorption and carrier multiplication......... 68 4.3.4 Comparision of carrier generation quantum yield as determined from photoluminescence and induced absorption.... 72 4.4 Conclusions................................ 77 5 Carbon dots - notable material for optoelectronics 79 5.1 Introduction................................ 79 5.2 Experimentals............................... 81 5.2.1 Samples.............................. 81 5.2.2 Characterization techniques................... 83 5.3 Results and discussion.......................... 85 5.3.1 Rapid pyrolysis of organic precursors hosted within rod-shaped mesoporous silica templates and morpho-chemical characterization of undoped and N-doped CNDs............. 85
Contents iii 5.3.2 Optical characterization of colloidal undoped and N-doped CNDs............................... 89 5.3.3 Comparative optical behavior of colloidal and solid state CNDs 91 5.4 Conclusions................................ 95 Summary 97 Samenvatting 99 Acknowledgement 101 List of publications 103 Bibliography 105
Abbreviation list Abbreviation AM AR BE CCD CM CMOS CND e-h FTIR HRTEM IA II MEG NC NIR ND OPA OPO PL PLE PMT PV QC QCE QD QY RF SEM SSQC TEM UV VIS XPS Description Air mass Auger recombination Binding energy Charge-coupled device Carrier multiplication Complementary metal oxide semiconductor Carbon nanodot Electron-hole Fourier transform infrared High-resolution transmission electron microscopy Induced absorption Impact ionization Multiple-exciton generation Nanocrystal Near infrared Neutral density Optical parametric amplier Optical parametric oscillators Photoluminescence Photoluminescence excitation Photomultiplier tube Photovoltaics Quantum connement Quantum connement eect Quantum dot Quantum yield Radio frequency Scanning electron microscopy Space-separated-quantum cutting Transmission electron microscope Ultraviolet Visible X-ray photoelectron spectroscopy