ONSIERTIONS ON THE FRONT- EN REOUT FOR RYOGENI PRTILE ETETORS GINLUIGI PESSIN INFN Isttuto Nazonale d Fsca Nucleare and Unversta' degl Stud d Mlano-Bcocca, Va elora 6, 033 Mlano Italy PESSIN@MI.INFN.IT
OUTLINE OF THE TLK. SIGNL TO NOISE RTIO, S/N, FOR PRTILE ETETORS;. HOIE OF THE POSSIBLE PREMPLIFIER ONFIGURTIONS; 3. EFFETS OF NOISE SOURES OF NON INTRINSI ORIGIN; 4. POSSIBLE REUTION OF NON INTRINSI EFFETS; 5. OL ELETRONI VS ROOM TEMPERTURE ELETRONI; 6. ONFIGURTION FOR THE OL ELETRONI; 7. TIVE EVIES FOR LOW TEMPERTURE OPERTION; 8. TIVE EVIES FOR ROOM TEMPERTURE OPERTION; 9. REOUT FOR RRY OF ETETORS.
. SIGNL TO NOISE RTIO FOR RYOGENI ETETORS QS T T V = Q S T O V O V O = N T T THE SIGNL TO NOISE RTIO IS: S N π 0 N Q T T S T H S N N π = d Q S T e π V O d t m d π Q 0 S V O SHWRT INEQULITY T d WHTEVER IS THE SYSTEM TRNSFER FUNTION. THE SIGN = IS VLI WHEN V O IS SENT TO THE FILTER OPTIMUM F. HVING THE TRNSFER FUNTION: * * S T t H = K e m N PRTIL SES 3
4.a THE HRGE OR URRENT SENSITIVE ONFIGURTION.a THE HRGE OR URRENT SENSITIVE ONFIGURTION - QS e V O Q S V F O = T F = THEN: π 0 H. d e S Q N S THE S/N EPENS ON THE VLUE OF THE PREMPLIFIER INPUT IMPENE THROUGH. F T F = THEN: e V F F O VIRTUL GROUN V - 0. = e V F F O IN GENERL: F >> P LET'S PUT: P =
5.b THE VOLTGE SENSITIVE ONFIGURTION.b THE VOLTGE SENSITIVE ONFIGURTION - QS z F F e z O V Q S V O = T = THEN: O e V = T = THEN: π 0 VOL. d e S Q N S LTHOUGH THE INPUT IMPENE IS BOOTSTRPPE THE S/N EPENS STILL ON IT. THE PREMPLIFIER ONFIGURTION OES NOT HVE EFFET ON THE S/N. V V F F F = P LET S LL: P =
6.c OPTIMITION OF THE PREMPLIFIER INPUT TRNSISTOR.c OPTIMITION OF THE PREMPLIFIER INPUT TRNSISTOR P = π 0 d e S Q N S THE INPUT IMPENE OF THE PREMPLIFIER IS GENERLLY WELL PPROXIMTE BY PITNE: SMLL TRNSISTOR RE: LRGER NOISE N SMLL. LRGE TRNSISTOR RE: SMLLER NOISE BUT LRGE. π 0 O O d e S Q N S π 0 O O d e S Q N S IT IS VLI THT: O e e = O = ONE THE TEHNOLOGY HS BEEN SELETE ON THE BSIS OF THE SIGNL BNWITH, IT EXISTS N OPTIMUM RE FOR THE INPUT TRNSISTOR THT MXIMIES THE S/N.
. HOIE OF THE POSSIBLE PREMPLIFIER ONFIGURTION QS VOLTGE SEN. PREM. IFFERENTIL SEN. PREM. QS - HIGH INPUT IMPENE; INPUT FLOTING; OUPLING OR ; LRGE ROSS-TLK; THE OUTPUT SIGNL EPENS ON THE ETETOR IMPENE. THE SME S BOVE BUT WITH NO ROSS-TLK HRGE OR URRENT SEN. PREM. QS F LOW INPUT IMPENE; INPUT VOLTGE FIXE BY THE PREMPLIFIER INPUT EVIE; OUPLING S NTURL SOLUTION; NO ROSS-TLK; THE OUTPUT SIGNL OES NOT EPEN ON THE ETETOR IMPENE. 7
3.a EFFETS OF NOISE SOURES OF NON INTRINSI ORIGIN: MIROPHONISM MIROPHONISM IS GIVEN BY EFFETS: ETETOR FRITION; MOVEMENT OF THE ONNETING WIRES. P PO P cos O t WITH R THE ETETOR IMPENE N O THE MONOHROMTI OSILLTING FREQUENY: R V o P V P BIS sn ot P R o P MEHNIL VIBRTIONS OF WIRES N ETETOR. N, IF THE ETETOR IMPENE IS LRGE ENOUGH, R P > O : V V BIS P P sn o t P V F THE ETETOR IS OUPLE TROUGH N R > O : Q P P VBIS sn F P IN SE OF OUPLING: Q P F P P V sn o o t t >> Q 8
9 3.b EFFETS OF NOISE SOURES OF NON INTRINSI ORIGIN: ROSS-TLK H P R IF THE ETETOR IMPENE IS LRGE ENOUGH: V R V R P H P F V R V R PRE 0 H P V I PRE 0, LREY R F SINE THE YNMI INPUT PITNE PRE OF THE PREMPLIFIER IS VERY LRGE. H P HENE THE HRGE OR URRENT SENSITIVE PREMPLIFIER IS FREE FROM ROSS-TLK.
0 4.a POSSIBLE REUTION OF NON INTRINSI EFFETS: MIROPHONISM IFFERENTIL VOLTGE ONFIGURTION c P c P - THE WIRES MUST BE TIE TOGETHER FIRMLY SO NY FLUTUTION BEOMES EQUL N NELS T THE IFFERENTIL PREMPLIFIER INPUT. IFFERENTIL HRGE ONFIGURTION P F F - THE IFFERENTIL ONFIGURTION HS LRGER PREMPLIFIER INPUT NOISE, FTOR OR, EPENING ON IRUIT ONFIGURTION. P
4.b POSSIBLE REUTION OF NON INTRINSI EFFETS: ROSS-TLK IFFERENTIL VOLTGE ONFIGURTION H H c P c P c P - R c P - THE IFFERENTIL ONFIGURTION LLOWS LSO TO TO RELIE SUPPRESSION OF THE ROSS-TLK. NOW THE THE INUING SIGNL IS GENERTE BY PIR OF OUPLE WIRES N TERMINTES ON PIR OR OUPLE WIRES: IT BEOMES OMMON MOE SIGNL.
5. OL ELETRONI VS ROOM TEMPERTURE ELETRONI THE USE OF OL ELETRONI IS OF OURSE THE OPTIMUM HOIE. NEVERTHELESS THE ROOM TEMPERTURE OPTION IS BY FR MORE PRTIL N OFTEN LLOWS TO OBTIN SIMILR RESULTS. REFRIGERTOR L T B 0mK P T E 00K SELETION RULES FOR HIGH SPEE N LRGE IMPENE P MUST BE MINIMIE. FOR THIS SITUTION IT IS MUST TO LOTE THE FRONT-EN LOSE TO THE ETETOR, T LOW TEMPERTURE. OL ELETRONI PRSITI PITNE = P REFRIGERTOR T B 0mK L P P - IF THE SPEE OF RESPONSE IS SLOW ENOUGH, P N BE TOLERTE N THE ROOM TEMPERTURE ELETRONI N LLOW EQUTE RESULTS. IT IS REOMMENE TO USE IFFERENTIL ONFIGURTION. THE VOLTGE SENSITIVE ONE BEING BETTER HOIE.
3 6.a ONFIGURTION FOR THE OL ELETRONI: OL STGE THE TYPIL SOLUTION IS THE SIMPLER ONE: SOURE FOLLOWER, THT LLOWS TO HVE THE MINIML POWER ISSIPTION INSIE THE REFRIGERTOR. REFRIGERTOR R L V S IIS ET. BIS LOW NOISE II STGE VOL. GIN JFET BIS OPTIMITION GIN = Room Tem. x V R V OUT THE OPTIMITION OF THE GIN IS ME T ROOM TEMPERTURE BY BOOTSTRPPING TION ON BOTH THE SOURE N THE RIN OF THE OL JFET. old V EE R S x R S G.PESSIN, et all, TO BE PUBLISHE ON IEEE TR. ON NU.IENE
4 6.b ONFIGURTION FOR THE OL ELETRONI: II STGE T ROOM THE II STGE IS OMPOSE OF THE PRLLELING ONNETION OF 4 LOW SERIES NOISE OPERTIONL MPLIFIER, LT08 THE SERIES NOISE OF THIS PREMPLIFIER IS EXTREMELY LOW, BELOW nv/ Hz. F.GTTI ET LL, NIM 444, p.9, 000 OUPLING. THE OFFSET UE TO THE JFET V GS MUST BE IVIE BY THE FULL GIN. PRLLEL NOISE MY BE PROBLEM T LOW FREQUENY: T 0 Hz, IT N ONTRIBUTE WITH BOUT nv/ Hz.
6.c ONFIGURTION FOR THE OL ELETRONI: II STGE T ROOM REFRIGERTOR V S nv/ Hz 0. NOISE @ Hz:.6 nv/ Hz WHITE NOISE, FEEBK INLUE: nv/ Hz Hz 0 00 000 0000 00000 V EE INPUT BIS URRENT < 00 p. Parallel NOISE < 6 f/ Hz. VOLTGE GIN = 000 OWN TO 0.5 Hz. VOLTGE GIN = G.PESSIN, et all, TO BE PUBLISHE ON IEEE TR. ON NU.IENE THE MONITORING OF THE BSELINE N BE ME URTELY N THE OFFSET IS ESILY TO BE JUSTE. 5
6.c ONFIGURTION FOR THE OL ELETRONI: EXMPLES STJ SQUI ROOM VSP STJ SQUI RTFE: FEEBK ETIL M.J.van UUREN, et all, LT7, p.98..e.mrtin, et all, WOLTW4, p.87, 000 TES SQUI ROOM VSP P.ollng, et all, NIM 354, p.408, 995. SQUI RRY ROOM SP SQUI RRY SQUI ROOM VSP..E.MRTIN, et all, REW. SIE.INSTR., 7, p.3543, 000 6
7 7.a TIVE EVIES FOR LOW TEMPERTURE OPERTION MNY EVIES RE BLE TO WORK T RYOGENI TEMPERTURE. THE ONLY ONE THT IS NOT EQUTE FOR THIS PPLITION IS THE S BIPOLR TRNSISTOR. HERE THERE IS THE LIST OF THE POSSIBLE HOIE: EVIE SI MOS S JFET Ge JFET Gas MESFET l X Ga -X s HEMT SGe HBJT MINIMUM TEMPERTURE OF OPERTION LHe LN N BELOW LHe LHe LHe LHe OPTIMUM TEMPERTURE OF OPERTION 00 50 K 60 70 K LHe LHe NO T EH EVIE HS ITS OWN TEMPERTURE OF OPERTION N NOISE PERFORMNE.
7.a TIVE EVIES FOR LOW TEMPERTURE OPERTION: PHYSIS ONUTION BN FREE ELETRON ELETRONS RE FREE IN THE ONUTION BN. VLENE BN E d ONORS THERML ENERGY NEES TO ELETRONS TO JUMP FROM THE ONOR LEVEL TO THE ONUTION BN. IF THE ONOR LEVEL IS NON-EGENERTE, I.E. << THN THE VILBLE STTES IN THE ONUTION BN, THE POPULTION OF ELETRON IN THE ONUTION BN T LOW TEMPERTURE IS PROPORTIONL TO: TTENUTION Ed K BT e SEMI. E d mev TTENUTION TTENUTIO @ 70 K N @ 0 K Gas 6 0.6 0 - Ge 9 0.5 0-3 S 45 0-0 - SILION TENS TO OMPLETE FREEE-OUT T LOW TEMPERTURE, LTHOUGH THE PPLIE ELETRI FIEL HELPS IN EXTRTING ELETRONS FROM ONORS ENTERS. 8
9 7.b TIVE EVIES FOR LOW TEMPERTURE OPERTION MOS TRNSISTORS RE THE MORE STUIE T LOW TEMPERTURE. T THE SME TIME THEY RE LSO THE LESS USE S LOW NOISE FRONT-EN, EXEPT FOR FEW MONOLITHI PPLITIONS FOR HIGH FREQUENY EVIES. MOS EVIES O NOT SUFFER FREEE-OUT LTHOUGH ME OF SILION. S oxde n p-sub G n THE ELETRI FIEL IS HIGH N IS BLE TO EXTRT ELETRON FROM THE SUBSTRTE, LTHOUGH THE PRESENE OF FREEE-OUT. UE TO THE ELETRI FIEL EFFET THEY RE BLE TO WORK OWN TO 4. K; THEY SHOW LRGE /f FREQUENY NOISE; p-mos RE GENERLLY LESS NOISY THN n-mos UE TO OXIE TRPPING ETRPPING MEHNISM;
7.c TIVE EVIES FOR LOW TEMPERTURE OPERTION: MOS EXMPLE OF NOISE FOR n-mos N p-mos TRNSISTOR FROM 5 K TO 300 K. n-mos p-mos UNKNOWN RE 0 K 5 K E..HENRIKS, et all, PHYSI V.47B, P.9 E.SIMOEN, et all, PRO. OF NOIS IN PHYSIL SYSTEM, P.57, 997 T = 4. K = 0. pf ESTIMTE FROM THE PPER. NOISE @ Hz: 630 nv/ Hz. 50 K 300 K g m = 00 µ/v THE PRMETER H f, THE PROUT OF THE /f NOISE OEFFIIENT N THE INPUT PITNE OF THE TRNSISTOR RESULTS IN: 4.5 nv/ Hz WHITE H f = f = 8 X 0-6 J. MOS HVING 5 pf HS: H f / = 6 nv/ Hz @ Hz. 0
7.d TIVE EVIES FOR LOW TEMPERTURE OPERTION: O MOS ONE ESILY WY TO USE MOS TRNSISTORS IS WITH MOS OPERTIONL MPLIFIER. T LEST ONE, IS BLE TO WORK: TL 0. NOISE IMPROVES T 77 K, NO T WERE PRESENTE BELOW. ROOM G.LOMBRI, et all, WOLTE3, p.85, 998. ROOM 00 Hz 77 K 00 Hz 8.9 nv/ Hz 5. nv/ Hz ROOM 0K Hz 77 K 0 KHz 8 nv/ Hz 3.3 nv/ Hz
7.e TIVE EVIES FOR LOW TEMPERTURE OPERTION: Ge JFET TWO GROUPS RE EVELOPING Ge JFET FOR LOW TEMPERTURE PPLITION. THE TRNSISTORS WORK WELL OWN TO LOW TEMPERTURE, BUT /f NOISE SEEMS NOT YET THE WISHE FOR. 4. K ROOM 77 K THE INPUT PITNE IS BETWEEN 0 pf N 40 pf. THE NOISE @ Hz IS 000 nv/ Hz T 4. K. THIS ORRESPON TO N H f = X 0-3 J. H f = X 0-5 J @ 77 K. N..S, et all, SOL. ST. ELE., 44, p.937, 000. OPTIMUM TEMPERTURE ROUN 60 K. 60 pf < < 00 pf H f =.5 X 0-5 J. WHITE NOISE LOSE TO nv/ Hz. R.R.WR, et all, WOLTE4, p.05, 000.
3 7.f TIVE EVIES FOR LOW TEMPERTURE OPERTION: Gas MESFET ET THE Gas MESFET PRESENTS LRGE /f NOISE, WHIH LOWERS T RYOGENI TEMPERTURES. = 7 pf THE NOISE T Hz FOR THIS EVIE IS BOUT 80 nv/ Hz. THIS ORRESPONS TO PRMETER H f OF: H f =.6 X 0-5 J G.PESSIN, et all, IEEE TR. NU. SI., 4, p. 60, 994. HRTERISTI OF Gaa MESFET IS THE STRONG VRIBILITY OF /f NOISE FROM WFER TO WFER. SMPLES PURHSE T IFFERENT TIMES N SHOW VER IFFERENT NOISE. G.PESSIN, et all, JPN. J. PPL. PHYS., 37, p. 5, 998.
4 7.g TIVE EVIES FOR LOW TEMPERTURE OPERTION: Gas MESFET 000 00 Seres nput nose of the Voltage fferental Preamplfer nv/ Hz 0 T=4k Vcc=3V Vee=-V f Hz 0 00 000 0000 V OUT OUT- V Q 7 Q 4 Q 6 Q 3 R R Q Q 5 R Q 8 IN Q Q I B R B S R B Q IN- R R O R V S R G O B V EE
5 B4 400/3 B 400/ 00 VO R IN 500 B5 400/ R BW B 4000/3 BM4 R F B99 BM5 RM B B9 V R6 B6 400/ OUT B9 B8 R3 Seres Nose ensty [nv/hz] 00 0 0.58 0.3 Whte Nose T = 87 K = 50 pf LPM NM B70 B7 NL 40Kž VSS 0, 0 4 0 5 0 6 0 7 0 8 Frequency [Hz]
7.d TIVE EVIES FOR LOW TEMPERTURE OPERTION: O MOS ONE ESILY WY TO USE MOS TRNSISTORS IS WITH MOS OPERTIONL MPLIFIER. T LEST ONE, IS BLE TO WORK: TL 0. NOISE IMPROVES T 77 K, NO T WERE PRESENTE BELOW. ROOM G.LOMBRI, et all, WOLTE3, p.85, 998. ROOM 00 Hz 77 K 00 Hz 8.9 nv/ Hz 5. nv/ Hz ROOM 0K Hz 77 K 0 KHz 8 nv/ Hz 3.3 nv/ Hz
7.e TIVE EVIES FOR LOW TEMPERTURE OPERTION: Ge JFET TWO GROUPS RE EVELOPING Ge JFET FOR LOW TEMPERTURE PPLITION. THE TRNSISTORS WORK WELL OWN TO LOW TEMPERTURE, BUT /f NOISE SEEMS NOT YET THE WISHE FOR. 4. K ROOM 77 K THE INPUT PITNE IS BETWEEN 0 pf N 40 pf. THE NOISE @ Hz IS 000 nv/ Hz T 4. K. THIS ORRESPON TO N H f = X 0-3 J. H f = X 0-5 J @ 77 K. N..S, et all, SOL. ST. ELE., 44, p.937, 000. OPTIMUM TEMPERTURE ROUN 60 K. 60 pf < < 00 pf H f =.5 X 0-5 J. WHITE NOISE LOSE TO nv/ Hz. R.R.WR, et all, WOLTE4, p.05, 000.
3 7.f TIVE EVIES FOR LOW TEMPERTURE OPERTION: Gas MESFET ET THE Gas MESFET PRESENTS LRGE /f NOISE, WHIH LOWERS T RYOGENI TEMPERTURES. = 7 pf THE NOISE T Hz FOR THIS EVIE IS BOUT 80 nv/ Hz. THIS ORRESPONS TO PRMETER H f OF: H f =.6 X 0-5 J G.PESSIN, et all, IEEE TR. NU. SI., 4, p. 60, 994. HRTERISTI OF Gaa MESFET IS THE STRONG VRIBILITY OF /f NOISE FROM WFER TO WFER. SMPLES PURHSE T IFFERENT TIMES N SHOW VER IFFERENT NOISE. G.PESSIN, et all, JPN. J. PPL. PHYS., 37, p. 5, 998.
4 7.g TIVE EVIES FOR LOW TEMPERTURE OPERTION: Gas MESFET 000 00 Seres nput nose of the Voltage fferental Preamplfer nv/ Hz 0 T=4k Vcc=3V Vee=-V f Hz 0 00 000 0000 V OUT OUT- V Q 7 Q 4 Q 6 Q 3 R R Q Q 5 R Q 8 IN Q Q I B R B S R B Q IN- R R O R V S R G O B V EE
5 B4 400/3 B 400/ 00 VO R IN 500 B5 400/ R BW B 4000/3 BM4 R F B99 BM5 RM B B9 V R6 B6 400/ OUT B9 B8 R3 Seres Nose ensty [nv/hz] 00 0 0.58 0.3 Whte Nose T = 87 K = 50 pf LPM NM B70 B7 NL 40Kž VSS 0, 0 4 0 5 0 6 0 7 0 8 Frequency [Hz]