HITFET BTS 7N Features Logic Level Input Input Protection (ESD) Thermal shutdown with auto restart Green product (RoHS compliant) Product Summary Drain source voltage V DS V Onstate resistance R DS(on) 5 m Nominal load current I D(Nom). Clamping energy E S 5 mj Overload protection Short circuit protection Overvoltage protection Current limitation nalog driving possible pplication ll kinds of resistive, inductive and capacitive loads in switching or linear applications µc compatible power switch for V DC applications Replaces electromechanical relays and discrete circuits VPS5 General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M HITFET Drain Current Limitation Overvoltage Protection Pin and (TB) Pin In GateDriving Unit ESD Overload Protection Overtemperature Protection Short circuit Protection Pin Source Datasheet Rev..,
HITFET BTS 7N Maximum Ratings at T j = 5 C, unless otherwise specified Parameter Symbol Value Unit Drain source voltage V DS V Supply voltage for full short circuit protection ) V bb(sc) Continuous input voltage ) V IN. )... + Continuous input current ).V V IN V V IN <.V or V IN > V I IN self limited I IN Operating temperature T j...+5 C Storage temperature T stg 55... +5 Power dissipation 5) T C = 5 C m P tot. W Unclamped single pulse inductive energy ) E S 5 mj Load dump protection V LoadDump )) = V + V S V IN = and V, t d = ms, R I =, R L = 9, V =.5 V Electrostatic discharge voltage ) (Human Body Model) according to Jedec norm EI/JESDB, Section V LD 5 V V ESD kv R thj Thermal resistance junction ambient: K/W @ min. footprint @ cm cooling area ) 5 7 junctionsoldering point: R thjs 7 K/W For input voltages beyond these limits IIN has to be limited. not subject to production test, specified by design VLoaddump is setup without the DUT connected to the generator per ISO 77 and DIN 9 Device on 5mm*5mm*.5mm epoxy PCB FR with cm (one layer, 7µm thick) copper area for drain connection. PCB mounted vertical without blown air. 5 not subject to production test, calculated by RthJ and R ds(on) For supply voltages above V the voltage drop Von has to be limited by Rsc=mohm/V Datasheet Rev..,
HITFET BTS 7N Electrical Characteristics Parameter Symbol Values Unit at T j = 5 C, unless otherwise specified min. typ. max. Characteristics Drain source clamp voltage T j =...+ 5, I D = m V DS(Z) 55 V Offstate drain current T j =...+5 C, V bb = V, V IN = V I DSS µ.5 T j = 5 C Input threshold voltage I D =. m, T j = 5 C V IN(th). V.7. I D =. m, T j = 5 C. On state input current I IN(on) µ Onstate resistance R DS(on) m V IN = 5 V, I D =., T j = 5 C V IN = 5 V, I D =., T j = 5 C Onstate resistance R DS(on) V IN = V, I D =., T j = 5 C V IN = V, I D =., T j = 5 C 5 Nominal load current 5) V DS =.5 V, T j < 5 C, V IN = V, T = 5 C Current limit (active if V DS >.5 V) ) V IN = V, V DS = V, t m = µs I D(Nom). I D(lim) 5 7.5 Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on conditi and a short circuit occurs, these values might be exceeded for max. 5 µs. 5 not subject to production test, calculated by RthJ and R ds(on) Datasheet Rev..,
HITFET BTS 7N Electrical Characteristics Parameter Symbol Values Unit at T j = 5 C, unless otherwise specified min. typ. max. Dynamic Characteristics Turnon time V IN to 9% I D : R L =.7, V IN = to V, V bb = V Turnoff time V IN to % I D : R L =.7, V IN = to V, V bb = V Slew rate on 7 to 5% V bb : R L =.7, V IN = to V, V bb = V Slew rate off 5 to 7% V bb : R L =.7, V IN = to V, V bb = V t on 5 µs t off dv DS /dt on..5 V/µs dv DS /dt off..5 Protection Functions ) Thermal overload trip temperature T jt 5 75 C Thermal hysteresis ) T jt K Input current protection mode I IN(Prot) µ T j = 5 C Unclamped single pulse inductive energy ) I D =., T j = 5 C, V bb = V E S 5 mj Inverse Diode Inverse diode forward voltage I F = 7, t m = 5 µs, V IN = V, t P = µs V SD.5 V Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. not subject to production test, specified by design Datasheet Rev..,
HITFET BTS 7N Block diagram Terms Inductive and overvoltage output clamp V IN I IN IN HITFET R L D S I D VDS V bb V Z D S HITFET Input circuit (ESD protection) Short circuit behaviour Input Gate Drive VIN Source/ Ground IIN IDS Tj Datasheet 5 Rev..,
HITFET BTS 7N Maximum allowable power dissipation P tot = f(t S ) resp. P tot = f(t ) @ R thj =7 K/W W Onstate resistance R ON = f(t j ); I D =.; V IN =V m max. Ptot 7 max. RDS(on) 7 5 5 cm 75 5 5 5 5 75 C 5 T S ;T Onstate resistance R ON = f(t j ); I D =.; V IN =5V 5 5 5 5 75 5 C 75 T j Typ. input threshold voltage V IN(th) = f(t j ); I D =. m; V DS = V 5 m max. V. RDS(on) 75 75 VGS(th).. 5 5. 75. 5. 5. 5 5 5 5 75 5 C 75 T j 5 5 5 5 75 C 5 T j Datasheet Rev..,
HITFET BTS 7N 5 Typ. transfer characteristics I D =f(v IN ); V DS =V; T Jstart =5 C Typ. short circuit current I D(lim) = f(tj); V DS =V Parameter: V IN ID 5 ID(lim) 7 Vin=V 5 5V 5 7 V V IN 7 Typ. output characteristics I D =f(v DS ); T Jstart =5 C Parameter: V IN 5 5 5 5 75 5 C 75 T j Offstate drain current I DSS = f(t j ) 7V Vin=V µ max. ID 7 5 V 5V V IDSS 9 7 V 5 typ. V V DS 5 5 5 5 75 5 C 75 T j Datasheet 7 Rev..,
HITFET BTS 7N 9 Typ. overload current I D(lim) = f(t), V bb = V, no heatsink Parameter: T jstart Typ. transient thermal impedance Z thj =f(t p ) @ cm cooling area Parameter: D=t p /T ID(lim) C 5 C 5 C ZthJ K/W D=.5...5.. 5 C.5.5.5 ms t Single pulse 7 5 s t p Determination of I D(lim) I D(lim) = f(t); t m = µs Parameter: T Jstart ID(lim) C 5 C 5 C 5 C.... ms.55 t Datasheet Rev..,
HITFET BTS 7N Package Outlines Package Outlines.5 ±. ±.. MX..±. 7±. 5 MX..5 ±. B.7 ±....5 MIN..... ±..5 M.5 M B Figure PGSOT (Plastic Green Small Outline Transistor Package) GPS55 Green Product (RoHS compliant) To meet the worldwide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHSCompliant (i.e Pbfree finish on leads and suitable for Pbfree soldering according to IPC/JEDEC JSTD). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page Products : http://www.infineon.com/products. Dimensions in mm Datasheet 9 Rev..,
HITFET BTS 7N Revision History Revision History Version Date Changes Rev.. Package information updated to SOT Rev.. 7 released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings EC icon added RoHS icon added Green product (RoHScompliant) added to the feature list Package information updated to green Green explanation added Rev.. 9 released production version Datasheet Rev..,
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