查询 TPCS89 供应商 TPCS89 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS89 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 9 mω (typ.) High forward transfer admittance: Yfs = 9. S (typ.) Low leakage current: IDSS = µa (max) (VDS = V) Enhancement-mode: Vth =.~. V (VDS = V, ID = µa) Maximum Ratings (Ta = C) Characteristics Symbol Rating Unit Drain-source voltage V DSS V Drain-gate voltage (R GS = kω) V DGR V Gate-source voltage V GSS ± V Drain current Drain power dissipation (t = s) (Note a) Drain power dissipation (t = s) (Note b) DC (Note ) I D Pulse (Note ) I DP Single-device operation (Note a) Single-device value at dual operation (Note b) Single-device operation (Note a) Single-device value at dual operation (Note b) P D (). P D ().7 P D (). P D (). A W W JEDEC JEITA TOSHIBA -RE Weight:. g (typ.) Circuit Configuration 8 7 Single pulse avalanche energy (Note ) E AS. mj Avalanche current I AR A Repetitive avalanche energy Single-device value at dual operation (Note a, b, ) E AR.7 mj Channel temperature T ch C Storage temperature range T stg ~ C Note: (Note ), (Note ), (Note ), (Note ), (Note ) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution. --7
TPCS89 Thermal Characteristics Characteristics Symbol Max Unit Single-device operation (Note a) Thermal resistance, channel to ambient (t = s) (Note a) Single-device value at dual operation (Note b) Single-device operation (Note a) Thermal resistance, channel to ambient (t = s) (Note b) Single-device value at dual operation (Note b) R th (ch-a) () R th (ch-a) () 7 R th (ch-a) () 8 R th (ch-a) () 7 C/W C/W Marking (Note ) Type S89 Note : Please use devices on condition that the channel temperature is below C. Note : a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-...8 (Unit: mm) FR-...8 (Unit: mm) (a) (b) Note : a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note : V DD = V, T ch = C (initial), L =. mh, R G = Ω, I AR = A Note : Repetitive rating; pulse width limited by max channel temperature. Note : on lower right of the marking indicates Pin. * shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively) --7
TPCS89 Electrical Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ± V, V DS = V ± µa Drain cut-off current I DSS V DS = V, V GS = V µa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V V V (BR) DSX I D = ma, V GS = V 8 Gate threshold voltage V th V DS = V, I D = µa.. V V GS =. V, I D =. A Drain-source ON resistance R DS (ON) V GS =. V, I D =. A mω V GS =. V, I D =. A 9 Forward transfer admittance Y fs V DS = V, I D =. A. 9. S Input capacitance C iss 8 Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz pf Output capacitance C oss Switching time Rise time t r. V V I D =. A GS Turn-ON time t on V V OUT Fall time t f 7. Turn-OFF time t off V DD V Duty < = %, t w = µs Total gate charge (gate-source plus gate-drain) Q g Gate-source charge Q gs V DD V, V GS = V, I D = A. Gate-drain ( miller ) charge Q gd..7 Ω RL = Ω ns nc Source-Drain Ratings and Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note ) I DRP A Forward voltage (diode) V DSF I DR = A, V GS = V. V --7
TPCS89.8.9 I D V DS.7 Ta = C.. 8.9 I D V DS Ta = C.8.7. VGS =. V. VGS =. V..8... 8 I D V GS Ta = C VDS = V Drain-source voltage VDS (V)...8... V DS V GS Ta = C ID = A 8 Gate-source voltage V GS (V) Gate-source voltage V GS (V) Y fs I D R DS (ON) I D Forward transfer admittance Yfs (S) Ta = C VDS = V Drain-source ON resistance RDS (ON) (mω) VGS = V. Ta = C.. Drain current I D (A) Drain current I D (A) --7
TPCS89 R DS (ON) Ta I DR V DS Drain-source ON resistance RDS (ON) (mω) ID =,.,. A ID = A. ID =,.,. A. VGS =. V VGS =. V VGS =. V Drain reverse current IDR (A).. VGS = V Ta = C.....8 Ambient temperature Ta ( C) Capacitance C (pf). Ta = C f = MHz VGS = V Capacitance V DS Ciss Coss Crss Gate threshold voltage Vth (V)...8... V th Ta VDS = V ID = µa Ambient temperature Ta ( C) Drain power dissipation PD (W)..8... () () () () P D Ta Device mounted on a glass-epoxy board (a) (Note a) () Single-device operation (Note a) () Single-device value at dual operation (Note b) Device mounted on a glass-epoxy board (b) (Note b) () Single-device operation (Note a) () Single-device value at dual operation (Note b) t = s Drain-source voltage VDS (V) Dynamic input/output characteristics ID = A Ta = C VDS = V VGS 8 Gate-source voltage VGS (V) 8 8 Ambient temperature Ta ( C) Total gate charge Q g (nc) --7
TPCS89 Device mounted on a glass-epoxy board (a) (Note a) r th t w Normalized transient thermal impedance rth ( C/W).. () Single-device operation (Note a) () () Single-device value at dual operation (Note b) Device mounted on a glass-epoxy board (b) (Note b) () () Single-device operation (Note a) () () Single-device value at dual operation (Note b) () Single pulse.... Pulse width t w (S) ID max (pulse) * Safe operating area Single-device value at dual operation (Note b) ms *..... * Single pulse Ta = C Curves must be derated linearly with increase in temperature. ms * VDSS max..... --7
TPCS89 RESTRICTIONS ON PRODUCT USE 77EAA TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 7 --7