TPC85 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications (P Channel U MOS IV/N Channel U-MOS III) TPC85 Unit: mm Low drain-source ON resistance : P Channel RDS (ON) = 25 mω (typ.) N Channel RDS (ON) = 2 mω (typ.) High forward transfer admittance : P Channel Yfs = 2S (typ.) N Channel Yfs = S (typ.) Low leakage current : P Channel IDSS = µa (VDS = 3 V) N Channel IDSS = µa (VDS = 3 V) Enhancement-mode : P Channel Vth =.8~ 2. V (VDS = V, ID = ma) N Channel Vth =.3~2.5 V (VDS = V, ID = ma) Maximum Ratings () Characteristics Symbol Rating P Channel N Channel Unit Drain-source voltage V DSS 3 3 V Drain-gate voltage (R GS = 2 kω) V DGR 3 3 V Gate-source voltage V GSS ±2 ±2 V JEDEC JEITA TOSHIBA 2-6JE Drain current DC (Note ) I D.5 6 Pulse (Note ) I DP 8 2 A Weight:.8 g (typ.) Drain power dissipation (t = s) (Note 2a) Drain power dissipation Single-device operation Single-device value at dual Single-device operation P D ().5.5 P D (2).. P D ().75.75 W Circuit Configuration (t = s) (Note 2b) Single-device value at dual P D (2).5.5 Single pulse avalanche energy E AS 3.2 (Note a) 23. (Note b) mj Avalanche current I AR.5 6 A Repetitive avalanche energy Single-device value at operation (Note 2a, 3b, 5) E AR. mj Channel temperature T ch 5 C Storage temperature range T stg 55~5 C Note: For Notes to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. 2-9-2
TPC85 Thermal Characteristics Characteristics Symbol Max Unit Single-device operation Thermal resistance, channel to ambient (t = s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, channel to ambient (t = s) (Note 2b) Single-device value at dual operation (Note 3b) R th (ch-a) () 83.3 R th (ch-a) (2) R th (ch-a) () 67 R th (ch-a) (2) 278 C/W Marking TPC85 Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb)-free package or lead (Pb)-free finish. Note : Ensure that the channel temperature does not exceed 5 C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR- 25. 25..8 (unit: mm) FR- 25. 25..8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is applied to one device only.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is evenly applied to both devices.) Note : a) V DD = 2 V, T ch = 25 C (initial), L =.5 mh, R G = 25 Ω, I AR =.5 A b) V DD = 2 V, T ch = 25 C (initial), L =.5 mh, R G = 25 Ω, I AR = 6. A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: on the lower left of the marking indicates Pin. Weekly code: (Three digits) Week of manufacture ( for the first week of the year, continuing up to 52 or 53) Year of manufacture (the last digit of the calendar year) 2 2-9-2
TPC85 P-ch Electrical Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±6 V, V DS = V ± µa Drain cut-off current I DSS V DS = 3 V, V GS = V µa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V 3 V (BR) DSX I D = ma, V GS = 2 V 5 Gate threshold voltage V th V DS = V, I D = ma.8 2. V Drain-source ON resistance R DS (ON) V GS =.5 V, I D = 2.2 A 32 2 R DS (ON) V GS = V, I D = 2.2 A 25 33 Forward transfer admittance Y fs V DS = V, I D = 2.2 A 6 2 S Input capacitance C iss 5 Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz 22 Output capacitance C oss 25 Rise time t r 5. V mω pf Switching time Turn-ON time t on 3 Fall time t f 35 ns Turn-OFF time t off 25 Total gate charge (Gate-source plus gate-drain) Q g Gate-source charge Q gs V DD 2 V, V GS = V, I D =.5 A. Gate-drain ( miller ) charge Q gd 8.2 nc Source-Drain Ratings and Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note ) I DRP 8 A Forward voltage (diode) V DSF I DR =.5 A, V GS = V.2 V 3 2-9-2
TPC85 N-ch Electrical Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±6 V, V DS = V ± µa Drain cut-off current I DSS V DS = 3 V, V GS = V µa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V 3 V (BR) DSX I D = ma, V GS = 2 V 5 Gate threshold voltage V th V DS = V, I D = ma.3 2.5 V Drain-source ON resistance R DS (ON) V GS =.5 V, I D = 3 A 25 33 R DS (ON) V GS = V, I D = 3 A 2 26 Forward transfer admittance Y fs V DS = V, I D = 3 A 7 S Input capacitance C iss 2 Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz 8 Output capacitance C oss 23 Rise time t r.5 V mω pf Switching time Turn-ON time t on 2.5 Fall time t f 6.6 ns Turn-OFF time t off 33 Total gate charge (Gate-source plus gate-drain) Q g 27 Gate-source charge Q gs V DD 2 V, V GS = V, I D = 6 A 3.9 Gate-drain ( miller ) charge Q gd 7. nc Source-Drain Ratings and Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note ) I DRP 2 A Forward voltage (diode) V DSF I DR = 6 A, V GS = V.2 V 2-9-2
TPC85 P-ch 8 6 2 8 I D V DS 6 3.2 2.8 2.6 2. 2.3 2.2 2. VGS = 2 V 8 6 5 2 9 6 3 3.2 I D V DS 2.8 2.6 2. 2.3 2.2 2..2..6.8. VGS = 2 V 2 3 5 8 5 2 9 6 3 VDS = V 25 Ta = 55 C I D V GS Drain source voltage VDS (V).6.5..3.2..3 V DS V GS ID =.5 A 2.2 2 3 5 Gate source voltage V GS (V) 2 6 8 2 Gate source voltage V GS (V) Y fs I D R DS (ON) I D Forward transfer admittance Yfs (S) VDS = V Ta = 55 C 25 Drain source ON resistance RDS (ON) (mω) VGS =.5 V. Drain current I D (A). Drain current I D (A) 5 2-9-2
TPC85 P-ch Drain source ON resistance RDS (ON) (mω) 5 3 2 R DS (ON) Ta ID =.3 A, 2.2 A,.5 A VGS =.5 V ID =.3 A, 2.2 A,.5 A VGS = V Drain reverse current IDR (A) I DR V DS 5 3 VGS = V 8 8 2 6..2..6.8..2 Capacitance C (pf) VGS = V f = MHz C V DS. Ciss Coss Crss Gate threshold voltage Vth (V) 2..6.2.8. V th Ta VDS = V ID = ma 8 8 2 6 Drain power dissipation PD (W) 2..6 ().2 (2).8 (3) (). P D Ta Device mounted on a glass-epoxy board (a) (Note 2a) () Single-device operation (2) Single-device value at dual Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation () Single-device value at dual t = s Drain source voltage VDS (V) 3 2 ID =.5 A VDS VGS Dynamic input/output characteristics 6 2 VDD = 2 V 6 2 8 Gate source voltage VGS (V) 5 5 2 2 3 5 Total gate charge Q g (nc) 6 2-9-2
TPC85 P-ch Transient thermal impedance rth ( C/W) Single pulse r th t w Device mounted on a glass-epoxy board (a) (Note 2a) () Single-device operation (2) Single-device value at dual Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation () Single-device value at dual t = s.... () (3) (2) () Pulse width t w (s) Safe operating area Single-device value at dual ID max (Pulse)* ms* ms* *: Single nonrepetitive pulse Curves must be derated linearly with increase in temperature VDSS max.. 7 2-9-2
TPC85 N-ch 8 6 2 3.8 3.6 3. 6 I D V DS 3.3.2..6.8. 3.2 3. 3 2.9 2.8 2.7 VGS = 2.6 V 2 3.6 6 3.8 6 2 8 I D V DS 3. 3.3 3.2 3. 2 3 5 3 2.9 2.8 2.7 VGS = 2.6 V 2 6 2 8 VDS = V 25 I D V GS Ta = 55 C Drain source voltage VDS (V).6.5..3.2..5 V DS V GS ID = 6 A 3 2 3 5 6 Gate source voltage V GS (V) 2 6 8 2 Gate source voltage V GS (V) Forward transfer admittance Yfs (S) VDS = V 55 C Y fs I D 25 C Ta = C Drain source ON resistance RDS (ON) (mω) R DS (ON) I D VGS =.5 V VGS = V.. Drain current I D (A) Drain current I D (A) 8 2-9-2
TPC85 N-ch Drain source On resistance RDS (ON) (mω) 5 3 2 R DS (ON) Ta ID =.5 A ID = 2.2 A ID =.3 A VGS =.5 V ID =.5 A ID = 2.2 A ID =.3 A VGS = V Drain reverse current IDR (A) I DR V DS 5 3 VGS = V 8 8 2 6..2..6.8..2 Capacitance C (pf) C V DS Ciss Coss Crss VGS = V f = MHz. Gate threshold voltage Vth (V) V th Ta 5 VDS = V ID = ma 3 2 8 8 2 6 Drain power dissipation PD (W) 2..6 ().2 (2).8 (3) (). P D Ta Device mounted on a glass-epoxy board (a) (Note 2a) () Single-device operation (2) Single-device value at dual Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation () Single-device value at dual t = s Drain source voltage VDS (V) 3 2 ID = 6 A VDS Dynamic input/output characteristics VGS 6 2 VDD = 2 V 6 2 8 Gate source voltage VGS (V) 5 5 2 2 3 Total gate charge Q g (nc) 9 2-9-2
TPC85 N-ch Transient thermal impedance rth ( C/W) Single pulse r th t w Device mounted on a glass-epoxy board (a) (Note 2a) () Single-device operation (2) Single-device value at dual Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation () Single-device value at dual t = s.... () (3) (2) () Pulse width t w (s) Safe operating area Single-device value at dual ID max (Pulse) * ms* *: Single nonrepetitive pulse Curves must be derated ms* linearly with increase in temperature.. VDSS max 2-9-2
TPC85 RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. 369EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 2-9-2