NPN Silicon RF Transistor* For broadband amplifiers up to GHz and fast nonsaturated switches at collector currents from 0.5 ma to 0 ma Complementary type: BFT9 (PNP) * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR9P GFs =B =E =C SOT Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO 5 V Collectoremitter voltage V CES 0 Collectorbase voltage V CBO 0 Emitterbase voltage V EBO.5 Collector current I C 45 ma Base current I B 4 Total power dissipation T S 48 C P tot 80 mw Junction temperature T j 50 C Ambient temperature T A 65... 50 Storage temperature T stg 65... 50 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 65 K/W For calculation of RthJA please refer to Application Note Thermal Resistance 005
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO 5 V I C = ma, I B = 0 Collectoremitter cutoff current I CES µa V CE = 0 V, V BE = 0 Collectorbase cutoff current I CBO 0 na V CB = V, I E = 0 Emitterbase cutoff current I EBO 0 µa V EB =.5 V, I C = 0 DC current gain I C = 5 ma, V CE = 8 V, pulse measured h FE 70 0 40 005
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T.5 5 GHz I C = 5 ma, V CE = 8 V, f = 500 MHz Collectorbase capacitance V CB = V, f = MHz, V BE = 0, emitter grounded C cb 0.9 0.55 pf Collector emitter capacitance V CE = V, f = MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = MHz, V CB = 0, collector grounded Noise figure I C = ma, V CE = 6 V, Z S = Z Sopt, f = 900 MHz I C = ma, V CE = 6 V, Z S = Z Sopt, f =.8 GHz C ce 0. C eb 0.64 F.4 db Power gain, maximum available ) G ma I C = 5 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz 6 I C = 5 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f =.8 GHz.5 Transducer gain S e db I C = 5 ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 900 MHz I C = 5 ma, V CE = 8 V, Z S = Z L = 50 Ω, f =.8 MHz 7.5 Gma = S e / S e (k(k²) / ), 005
SPICE Parameter (GummelPoon Model, BerkleySPICE G.6 Syntax): Transitor Chip Data: IS = 0. fa VAF = 0 V NE =.905 VAR = 4.599 V NC =.7 RBM = 7.845 Ω CJE =.46 ff TF = 6.796 ps ITF = 4.460 ma VJC = 0.84079 V TR =.744 ns MJS = 0 XTI = BF = 94.7 IKF = 0.467 A BR =.79 IKR = 0.0 A RB = 4.998 Ω RE = 0.9088 VJE = 0.7068 V XTF = 0.87 PTF = 0 deg MJC = 0.4085 CJS = 0 ff XTB = 0 FC = 0.99545 NF =.0947 ISE = 9.55 fa NR = 0.898 ISC = 0.75557 fa IRB = 0.065 ma RC = 0.79 Ω MJE = 0.4686 VTF = 0.86 V CJC = 946.47 ff XCJC = 0.464 VJS = 0.75 V EG =. ev TNOM 00 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = 0.85 nh L BO = 0.5 nh L EI = 0.69 nh L EO = 0.6 nh L CI = 0 nh L CO = 0.49 nh C BE = 7 ff C CB = 84 ff C CE = 65 ff Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CDROM or see Internet: http//www.infineon.com/silicondiscretes 4 005
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 00 mw K/W Ptot 00 RthJS 50 0 50 0.5 0. 0. 0.05 0.0 0.0 0.005 D = 0 0 0 0 40 60 80 0 0 C 50 T S 7 6 5 4 s 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D = 0 0.005 0.0 0.0 0.05 0. 0. 0.5 0 7 6 5 4 s 0 t p 5 005
Package SOT BFR9P Package Outline +0. ) 0.4 0.05.9 ±0..9 B C 0.95.4 ±0.5 0.5 MIN. MAX. ±0. 0. MAX. 0...8 MAX. 0.08...0.5. ±0. A 0.5 M BC 0. M A Foot Print ) Lead width can be 0.6 max. in dambar area 0.8 0.8. 0.9. 0.9 Marking Layout Manufacturer s Date code (Year/Month) EH s 7 00, July Pin Type code BCW66 Example Standard Packing Reel ø80 mm =.000 Pieces/Reel Reel ø0 mm =.000 Pieces/Reel 4 0.9 0. 8..65 Pin.5.5 6 005
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