BFN4, BFN6 NPN Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collectoremitter saturation voltage Complementary type: BFN7 (PNP) Pbfree (RoHS compliant) package Qualified according AEC Q Type Marking Pin Configuration Package BFN4 BFN6 FHs FJs =B =B =E =E =C =C SOT SOT Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage BFN4 BFN6 Collectorbase voltage BFN4 BFN6 V CEO V CBO V Emitterbase voltage V EBO 6 Collector current I C ma Peak collector current, t p ms I CM Base current I B Peak base current I BM Total power dissipation P tot 6 mw T S 74 C Junction temperature T j C Storage temperature T stg 6... 9
BFN4, BFN6 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs K/W Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V I C = ma, I B =, BFN4 I C = ma, I B =, BFN6 Collectorbase breakdown voltage V (BR)CBO I C = µa, I E =, BFN4 I C = µa, I E =, BFN6 Emitterbase breakdown voltage I E = µa, I C = Collectorbase cutoff current V CB = V, I E =, BFN4 V CB = V, I E =, BFN6 V CB = V, I E =, T A = C, BFN4 V CB = V, I E =, T A = C, BFN6 V (BR)EBO 6 I CBO.. µa Emitterbase cutoff current V EB = V, I C = DC current gain ) I C = ma, V CE = V I C = ma, V CE = V I C = ma, V CE = V, BFN4 I C = ma, V CE = V, BFN6 I EBO na h FE 4 4 Collectoremitter saturation voltage ) I C = ma, I B = ma, BFN4 I C = ma, I B = ma, BFN6 Base emitter saturation voltage ) I C = ma, I B = ma V CEsat.4. V BEsat.9 V For calculation of R thja please refer to Application Note AN77 (Thermal Resistance Calculation) Pulse test: t < µs; D < % 9
BFN4, BFN6 Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency f T 7 MHz I C = ma, V CE = V, f = MHz Collectorbase capacitance V CB = V, f = MHz C cb. pf 9
BFN4, BFN6 DC current gain h FE = ƒ(i C ) V CE = V Operating range I C = ƒ(v CEO ) T A = C, D = BFN 4/6 EHP67 ma h FE µs IC µs ms DC ma Collector current I C = ƒ(v BE ) V CE = V Ι C V V CE Collector cutoff current I CBO = ƒ(t A ) V CB = V ma BFN 4/6 EHP6 na 4 BFN 4/6 EHP66 Ι C Ι CB max typ.. V. C V BE T A 4 9
BFN4, BFN6 Transition frequency f T = ƒ(i C ) V CE = parameter in V, f = GHz Collectorbase capacitance C cb = ƒ(v CB ) Emitterbase capacitance C eb = ƒ(v EB ) BFN 4/6 EHP6 9 MHz pf f T CCB(CEB) 7 6 4 CEB ma Total power dissipation P tot = ƒ(t S ) Ι C CCB 4 8 6 V V CB (V EB Permissible Pulse Load R thjs = ƒ(t p ) 4 mw K/W Ptot RthJS D=....... 4 6 7 9 C T S 6 4 s t p 9
BFN4, BFN6 Permissible Pulse Load P totmax /P totdc = ƒ(t p ) P P tot max tot DC BFN 4/6 t p = D T t p T EHP6 D =....... 6 4 s t p 6 9
Package SOT BFN4, BFN6 Package Outline +. ).4..9 ±..9 B C.9.4 ±.. MIN. MAX. ±.. MAX....8 MAX..8.... ±. A. M BC. M A Foot Print ) Lead width can be.6 max. in dambar area.8.8..9..9 Marking Layout (Example) EH s Manufacturer, June Date code (YM) Pin BCW66 Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.9. 8..6 Pin.. 7 9
BFN4, BFN6 Edition 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 9