Spectroscopy of. Semiconductors. Luminescence OXFORD IVAN PELANT. Academy ofsciences of the Czech Republic, Prague JAN VALENTA

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Luminescence Spectroscopy of Semiconductors IVAN PELANT Institute ofphysics, v.v.i. Academy ofsciences of the Czech Republic, Prague JAN VALENTA Department of Chemical Physics and Optics Charles University, Prague OXFORD UNIVERSITY PRESS

1 Introduction l References 7 2 Experimental techniques of luminescence spectroscopy 9 2.1 Emission and excitation spectra 9 2.2 Types of photodetectors 15 2.3 Monochromators and spectrographs 31 2.3.1 Dispersion and resolving power 33 2.3.2 Throughput of monochromators and spectrographs 40 2.4 Signal detection methods in luminescence spectroscopy 44 2.4.1 Phase-synchronous detection 44 2.4.2 Photon counting 48 2.5 Signal-to-noise ratio in a scanning monochromator 53 2.6 Fourier luminescence spectroscopy 57 2.7 Spectral corrections 58 2.8 Influence of slit opening on the shape of emission spectra 63 2.9 Time-resolved luminescence measurements 67 2.9.1 Direct imaging of the luminescence response 68 2.9.2 Phase-shift method 70 2.9.3 Time-correlated photon counting 72 2.9.4 Boxcar integrator 73 2.9.5 Streak camera 76 2.10 Problems 78 References 80 3 Kinetic description of luminescence processes 82 3.1 Radiative and non-radiative recombination. Luminescence quantum yield 82 3.2 Monomolecular process 85 3.3 Bimolecular process 87 3.4 Stretched exponential 89 3.5 Multiple processes present simultaneously 91 3.6 Problems 96 References 96

4 Phonons and their participation in optical phenomena 98 4.1 Lattice vibrations phonons 98 4.2 Electron-phonon and exciton-phonon interactions 103 4.3 Lattice vibrations associated with point defects 110 4.4 A localized optical centre in a solid matrix the configurational coordinate model 112 4.5 The shape of absorption and emission spectra of a localized centre 116 4.6 Thermal quenching of luminescence 120 4.7 Problems 121 References 122 5 Channels of radiative recombination in semiconductors 123 5.1 Overview of luminescence processes in crystalline semiconductors 123 5.2 Recombination of free electron-hole pairs 124 5.2.1 Direct bandgap 125 5.2.2 Indirect bandgap 128 5.3 Recombination of a free electron with a neutral acceptor (e-a ) and of a free hole with a neutral donor (h-d ) 132 5.4 Recombination of donor-acceptor pairs (D -A ) 135 5.5 Luminescence excited by two-photon absorption 139 5.6 Luminescence from transition metal and rare earth ion impurities 144 5.7 Problems 146 References 147 6 Non-radiative recombination 148 6.1 Transformation of the excitation energy into heat 149 6.1.1 Multiphonon recombination 149 6.1.2 Auger and bimolecular recombination 153 6.2 Creation of lattice defects 157 6.3 Photochemical changes 158 6.4 Problems 159 References 160 7 Luminescence of excitons 161 7.1 Concept of the Wannier exciton 162 7.1.1 Absorption spectrum of the Wannier exciton 165 7.1.2 Direct bandgap: resonant luminescence of free exciton-polaritons 168 7.1.3 Direct bandgap: luminescence of free excitons with emission of optical phonons 171 7.1.4 Luminescence of free excitons in indirect-bandgap semiconductors 177 7.2 Bound excitons 180

7.2.1 Excitons bound to shallow impurities 182 7.2.2 Quantitative luminescence analysis of shallow impurities in silicon 190 7.2.3 Excitons bound to isoelectronic impurities 194 7.2.4 Self-trapped excitons 199 7.3 Problems 201 References 202 8 Highly excited semiconductors 205 8.1 Experimental considerations 206 8.2 Excitonic molecule or biexciton 207 8.2.1 Identification of the EM emission line 208 8.2.2 Determination of biexciton parameters 216 8.3 Collisions of free excitons 218 8.4 Electron-hole liquid (EHL) 220 8.4.1 Luminescence determination of EHL parameters 223 8.4.2 Identification of the EHL emission band 226 8.4.3 Coexistence of excitonic molecules with electron-hole liquid 228 8.5 Electron-hole plasma (EHP) 230 8.5.1 Mott transition 230 8.5.2 Luminescence of EHP 232 8.6 Bose-Einstein condensation of excitons 234 8.6.1 Properties of the Bose-Einstein distribution 234 8.6.2 Luminescence experiment: Bose-Einstein condensation yes or no? 236 8.7 Problems 239 References 240 9 Luminescence of disordered semiconductors 242 9.1 Densities of states in bands 242 9.2 Temperature dependence of luminescence 244 9.3 Distribution of luminescence lifetimes 248 9.4 Spectral shape of the emission band 250 9.5 Some other properties of luminescence of disordered semiconductors 255 9.5.1 Correlation effects 255 9.5.2 Non-radiative recombination 256 9.5.3 Luminescence of impurities and defects 258 9.5.4 Luminescence 'fatigue' 260 9.6 Problems 261 References 262 10 Stimulated emission 263 10.1 Spontaneous versus stimulated emission. Optical gain 263 10.2 Optical gain in semiconductors 267

10.3 Spectral shape of the optical gain 271 10.4 Stimulated emission in an indirect-bandgap semiconductor 278 10.5 Participation of excitons in stimulated emission 282 10.6 Experimental techniques for measuring the optical gain 287 10.6.1 Variable stripe length (VSL) technique 287 10.6.2 Pump and probe (P&P) method 295 10.7 Problems 299 References 300 11 Electroluminescence 302 11.1 Historical notes 302 11.2 High-field electroluminescence 304 11.2.1 Experimental considerations 304 11.2.2 Mechanisms of high-field electroluminescence 308 11.2.3 Intensity, spectral and temporal characteristics 316 11.3 Injection electroluminescence 321 11.3.1 Electrical properties of a p-n junction 322 11.3.2 Intensity, spectral and temporal characteristics of LEDs 327 11.4 Electroluminescence of a p-n junction biased in the reverse direction 333 11.5 Problems 336 References 337 12 Electronic structure and luminescence of low-dimensional semiconductors 339 12.1 Basic types of low-dimensional semiconductors 340 12.1.1 Semiconductor heterostructures 340 12.1.2 Basic types of quantum-well heterostructures 342 12.2 Density of states in low-dimensional semiconductors 344 12.3 Quantum wells (layers) two-dimensional semiconductors 347 12.3.1 Single quantum well with infinite barriers 347 12.3.2 Quantum well with finite barriers 351 12.3.3 Excitons in a quantum well 353 12.3.4 Optical transitions in a quantum well 355 12.3.5 Luminescence of quantum wells 357 12.4 Quantum wires 359 12.5 Quantum dots nanocrystals 363 12.5.1 Quantum dot with spherically symmetric potential 363 12.5.2 Types of quantum dots according to the strength of the quantum confinement effect 365 12.5.3 Luminescence of quantum dots 368 12.6 Exciton-phonon interaction. Phonon bottleneck 371 12.7 Some special phenomena 374 12.8 Problems 378 References 379

13 Effects of high excitation in low-dimensional structures 381 13.1 Excitonic molecule (biexciton) in a quantum well 382 13.2 Trions in a quantum well 384 13.3 Collisions of free excitons in a quantum well 386 13.4 Electron-hole plasma (EHP) and electron-hole liquid (EHL) in 2D structures 387 13.5 Biexcitons, EHP, and EHL in quantum wires 392 13.6 Effects of high excitation in quantum dots (nanocrystals) 395 13.7 Problems 398 References 399 14 Stimulated emission and losing in low-dimensional structures 400 14.1 Stimulated emission in quantum wells 400 14.1.1 Localized excitons 401 14.1.2 Radiative decay of an exciton with emission of an LO-phonon (X-LO) 404 14.1.3 Stimulated emission in electron-hole plasma (EHP) 405 14.2 Stimulated emission in quantum wires 408 14.3 Stimulated emission in nanocrystals 410 14.3.1 Nanocrystals dispersed in a matrix 410 14.3.2 Heterostructures with ordered quantum dots 416 14.4 Random lasing 418 14.5 Problems 420 References 421 15 Silicon nanophotonics 423 15.1 Silicon nanocrystals 424 15.2 Optical gain in silicon nanocrystals 426 15.3 Active planar waveguides made of silicon nanocrystals 428 15.4 Electroluminescence of silicon nanocrystals 431 15.5 Silicon nanocrystals combined with Ei?+ ions 434 15.6 Biological applications of silicon nanocrystals 437 15.7 Problems 438 References 439 16 Photonic structures 441 16.1 Photonic crystals 441 16.1.1 Spontaneous emission 443 16.1.2 Stimulated emission 446 16.2 Microresonators 447 16.3 Microcavities 449 16.4 Single photon sources 451

16.5 Problems 453 References 454 17 Spectroscopy of single semiconductor nanocrystals 455 17.1 Basic principles 456 17.2 Experimental techniques 457 17.2.1 Wide-field micro-spectroscopy 458 17.2.2 Scanning techniques 460 17.3 Preparation of samples 465 17.3.1 Electron-and ion-beam lithography 465 17.3.2 Colloidal dispersions 466 17.4 Experimental observation of luminescence from individual nanocrystals 467 17.4.1 Hidden fine structure of luminescence spectra 467 17.4.2 Changes in spectra: jumps, shifts, blinking 469 17.4.3 Stark effect 470 17.4.4 Luminescence polarization 472 17.4.5 Luminescence intermittency blinking 478 17.5 Nanocrystals as sources of non-classical photon flux 485 17.5.1 Measuring photon statistics 485 17.5.2 Experimental manifestation of non-classical light emitted by a single nanocrystal 487 17.6 Problems 490 References 491 Appendices 493 A Convolution 493 B Emission spectrum of free excitons including phonon broadening 495 C Luminescence of an excitonic molecule 497 D Kinetic model of exciton condensation 502 E Bose-Einstein condensation 503 F Emission band due to strong electron-phonon interaction 505 G Fitting the optical gain spectral shape in the model of k-relaxation 507 H Reabsorption of luminescence in semiconductors 511 I Oscillator strength 513 J Fitting with a double exponential (Kocka's summation) 514 K Absolute quantum yield of luminescent materials 515 L Basic description of statistics of light from classical and non-classical sources 521 M Behaviour of multi-component spectral mixtures: the isostilbic point 526 Subject index 530 Material index 538