TPCF84 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF84 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications Unit: mm Low drain-source ON resistance : P Channel RDS (ON) = 6 mω (typ.) N Channel RDS (ON) = 38 mω (typ.) High forward transfer admittance : P Channel Yfs =.9 S (typ.) N Channel Yfs = 6.8 S (typ.) Low leakage current : P Channel IDSS = µa (VDS = 3 V) N Channel IDSS = µa (VDS = 3 V) Enhancement mode : P Channel Vth =.8 to. V (VDS = V, ID = ma) N Channel Vth =.3 to. V (VDS = V, ID = ma) Maximum Ratings () Characteristics Symbol Rating Unit Drain-source voltage V DSS -3 3 V Drain-gate voltage (R GS = kω) V DGR -3 3 V Gate-source voltage V GSS ± ± V Drain current Drain power dissipation (t = s) (Note a) Drain power dissipation (t = s) (Note b) DC (Note ) I D -3. 4. Pulse (Note ) I DP -.8 6. Single-device operation (Note 3a) Single-device value at dual operation(note 3b) Single-device operation (Note 3a) Single-device value at dual operation(note 3b) P D ().3.3 P D ().. P D ().3.3 P D ().33.33 A W JEDEC JEITA TOSHIBA -3UB Weight:. g (typ.) Circuit Configuration 8 7 6 Single pulse avalanche energy(note 4) E AS.67.6 mj Avalanche current I AR -.6. A Repetitive avalanche energy Single-device value at dual operation (Note a, 3b, ) E AR. mj Channel temperature T ch C 3 4 Marking (Note 6) 8 Storage temperature range T stg ~ C Note: For (Note ), (Note ), (Note 3), (Note 4), (Note ) and (Note 6), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. F6B 4 3-8-8
TPCF84 Thermal Characteristics Characteristics Symbol Max Unit Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = s) (Note a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = s) (Note b) Single-device value at dual operation (Note 3b) R th (ch-a) () 9.6 R th (ch-a) ().6 R th (ch-a) () 3.8 R th (ch-a) () 378.8 C/W C/W Note : Please use devices on condition that the channel temperature is below C. Note : (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b).4.4 FR-4.4.4.8 (Unit: mm) FR-4.4.4.8 (Unit: mm) (a) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: P Channel: V DD = 4 V, T ch = C (initial), L =. mh, R G = Ω, I AR =.6 A N Channel: V DD = 4 V, T ch = C (initial), L =. mh, R G = Ω, I AR =. A Note : Repetitive rating; Pulse width limited by Max. Channel temperature. Note 6: Black round marking locates on the left lower side of parts number marking F6B indicates terminal No.. (b) 3-8-8
TPCF84 P-ch Electrical Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±6 V, V DS = V ± µa Drain cut-off current I DSS V DS = 3 V, V GS = V µa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V 3 V (BR) DSX I D = ma, V GS = V V Gate threshold voltage V th V DS = V, I D = ma.8. V Drain-source ON resistance R DS (ON) V GS = 4. V, I D =.6A 8 V GS = V, I D =.6 A 6 7 mω Forward transfer admittance Y fs V DS = V, I D =.6 A.9.9 S Input capacitance C iss 6 Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz 6 pf Output capacitance C oss 7 Switching time Rise time t r.3 V V I D =.6 A GS Turn-on time t V OUT on Fall time t f 8.4 Turn-off time t off V DD V Duty < = %, t w = µs 34 Total gate charge Q (gate-source plus gate-drain) g V DD 4 V, V GS = V, 4 Gate-source charge Q gs I D = 3. A.4 Gate-drain ( miller ) charge Q gd.7 4.7 Ω RL = 9.38Ω ns nc Source-Drain Ratings and Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note ) I DRP.8 A Forward voltage (diode) V DSF I DR = 3. A, V GS = V. V 3 3-8-8
TPCF84 N-ch Electrical Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±6 V, V DS = V ± µa Drain cut-off current I DSS V DS = 3 V, V GS = V µa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V 3 V (BR) DSX I D = ma, V GS = V Gate threshold voltage V th V DS = V, I D = ma.3. V V GS = 4. V, I D =. A 8 77 Drain-source ON resistance R DS (ON) V GS = V, I D =. A 38 V mω Forward transfer admittance Y fs V DS = V, I D =. A 3.4 6.8 S Input capacitance C iss 47 Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz 6 pf Output capacitance C oss 8 Switching time Rise time t r. V V I D =. A GS V V OUT Turn-on time t on 8.3 Fall time t f 4. V DD V Turn-off time t off Duty < = %, t w = µs 4.7 Ω RL = 7.Ω ns Total gate charge (gate-source plus gate-drain) Q g Gate source charge Q gs V DD 4 V, V GS = V, I D = 6 A.7 Gate drain ( miller ) charge Q gd.4 nc Source Drain Ratings and Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note ) I DRP 6. A Forward voltage (diode) V DSF I DR = 4. A, V GS = V. V 4 3-8-8
TPCF84 P-ch - -4-3 - - -6-4. - I D V DS -3. -3. -.8 -.7 -.6 -. VGS = -.3 - -8-6 -4 - - -3. -3. -4. -6 I D V DS -.8 -.7 -.6 -. VGS = -.3 V -. -.4 -.6 -.8 -. - - -3-4 - Drain-source voltage VDS Drain-source voltage VDS I D V GS -8 VDS = - V -6-4 - Ta = C - - -3-4 - -. -.6 -. -.8 -.4 -.8 V DS V GS -.6 Ta= ID = -3.A - -4-6 -8 - Gate-source voltage VGS Gate-source voltage VGS Forward transfer admittance Yfs (S) VDS = - V Y fs I D Ta = C Drain-source ON resistance RDS (ON) (mω) R DS (ON) I D VGS = -4. V - -. -.3 - -3 -. - - 3-8-8
TPCF84 P-ch R DS (ON) Ta I DR V DS Drain-source ON resistance RDS (ON) (mω) 9 6 3 8 ID = -.8A, -.A, -4.A VGS = -4.V ID = -.8A, -.A, -4.A VGS = -V 4 4 8 6 Drain reverse current IDR (A) 3..3. - -3. -. -. VGS = V.3.6.9.. Capacitance V DS -. V th Ta Capacitance C (pf) Ciss Coss Crss VGS = V f = MHz -. - -3 - - -3 - - Gate threshold voltage Vth -. -. -. VDS = - V ID = -ma 8 4 4 8 6 Drain power dissipation PD (W) P D Ta. Device mounted on a glass-epoxy board (a) (Note a) ()Single-device operation (Note 3a) ()Single-device value at dual operation (Note 3b).6 Device mounted on a glass-epoxy board (b) (Note b) () (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) s. ().8 (3).4 (4) 4 8 6-3 - - - - - VDS - -6 VDD = -4V Dynamic input/output characteristics -4 4 8 VDD = -6V - VGS - - Common - source ID = -3. A 6 Gate-source voltage VGS Total gate charge Qg (nc) 6 3-8-8
TPCF84 P-ch r th t w Single pulse (4) (3) Transient thermal impedance rth ( /W). () () Device mounted on a glass-epoxy board (a) (Note a) ()Single-device operation (Note 3a) ()Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b).. Pulse width tw (s) - Safe operating area ID max (pulseed) * - - -. -. * Single pulse ms * Curves must be derated linearly with increase in temperature. ms * VDSS max - - - 7 3-8-8
TPCF84 N-ch 4 3 8. I D V DS 4. 3.8 6. 3. 3. 3. 8 6 4 8. 6. 4. I D V DS 3.8 3. 3. VGS =.8 V 3..8...4.6 VGS =.8 V 4 3 Drain-source voltage VDS Drain-source voltage VDS 8 I D V GS. V DS V GS 6 4 VDS = V Pulse tset Ta = C.6..8.4 Ta= ID = 4A 4 3 8 4 6 Gate-source voltage VGS Gate-source voltage VGS Forward transfer admittance Yfs (S) Y fs I D VDS = V Ta = C..3 3 Drain-source ON resistance RDS (ON) (mω) 3 R DS (ON) I D VGS = V. 4. 8 3-8-8
TPCF84 N-ch Drain-source ON resistance RDS (ON) (m Ω) 8 6 4 R DS (ON) Ta ID = 4A A VGS = 4.V A VGS = V ID = 4,, A Drain reverse current IDR (A) 3..3 I DR V DS. 3.. VGS = V 8 4 4 8 6. -. -.4 -.6 -.8 -. -. Capacitance V DS 3 V th Ta Ciss Capacitance C (pf) VGS = V f = MHz Coss Crss Gate threshold voltage Vth VDS = V ID = ma..3 3 3 8 4 4 8 6 Drain power dissipation PD (W)..6..8.4 () () (3) (4) P D Ta Device mounted on a glass-epoxy board (a) (Note a) ()Single-device operation (Note 3a) ()Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) s 3 6 VDS VDD = 4V Dynamic input/output characteristics 4 VDD = 6V VGS ID = 4.A Gate-source voltage VGS 4 8 6 4 8 6 total gate charge Qg (nc) 9 3-8-8
TPCF84 N-ch r th t w Single Pulse (4) (3) Transient thermal impedance rth ( /W). () () Device mounted on a glass-epoxy board (a) (Note a) ()Single-device operation (Note 3a) ()Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b).. Pulse width tw (s) Safe operating area ID max (Pulsed) * * Single pulse ms * ms *.. Curves must be derated linearly with increase in temperature. VDSS max 3-8-8
TPCF84 RESTRICTIONS ON PRODUCT USE TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 77EAA 3-8-8