NGTB4N3IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Features Extremely Efficient Trench with Fieldstop Technology 3 V Breakdown Voltage Optimized for Low Losses in IH Cooker Application Reliable and Cost Effective Single Die Solution These are PbFree Devices 4 A, 3 V V CEsat =.4 V E off =.3 mj C Typical Applications Inductive Heating Consumer Appliances Soft Switching ABSOLUTE MAXIMUM RATINGS G E Rating Symbol Value Unit Collectoremitter voltage V CES 3 V Collector current @ TC = C @ TC = C Pulsed collector current, T pulse limited by T Jmax, s Pulse, V GE = V Diode forward current @ TC = C @ TC = C Diode pulsed current, T pulse limited by T Jmax, s Pulse, V GE = V Gateemitter voltage Transient Gateemitter Voltage (T pulse = s, D <.) Power Dissipation @ TC = C @ TC = C Operating junction temperature range I C 8 4 A I CM A I F 8 4 A I FM A V GE ± P D 394 97 V W T J 4 to +7 C Storage temperature range T stg to +7 C Lead temperature for soldering, /8 from case for seconds T SLD 6 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. G C E A Y WW G TO47 CASE 34AL ORDERING INFORMATION Device Package Shipping NGTB4N3IHRWG MARKING DIAGRAM 4N3IHR AYWWG = Assembly Location = Year = Work Week = PbFree Package TO47 (PbFree) 3 Units / Rail Semiconductor Components Industries, LLC, 4 January, 4 Rev. Publication Order Number: NGTB4N3IHR/D
NGTB4N3IHRWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase R JC.38 C/W Thermal resistance junctiontoambient R JA 4 C/W ELECTRICAL CHARACTERISTICS (T J = C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, gateemitter shortcircuited V GE = V, I C = A V (BR)CES 3 V Collectoremitter saturation voltage V GE = V, I C = 4 A V GE = V, I C = 4 A, T J = 7 C V CEsat.4.8.7 V Gateemitter threshold voltage V GE = V CE, I C = A V GE(th) 4.. 6. V Collectoremitter cutoff current, gate emitter shortcircuited V GE = V, V CE = 3 V V GE = V, V CE = 3 V, T J = 7 C I CES.. ma Gate leakage current, collectoremitter shortcircuited V GE = V, V CE = V I GES na DYNAMIC CHARACTERISTIC Input capacitance C ies 9 pf Output capacitance V CE = V, V GE = V, f = MHz C oes 4 Reverse transfer capacitance C res Gate charge total Q g 34 nc Gate to emitter charge V CE = 6 V, I C = 4 A, V GE = V Q ge 39 Gate to collector charge Q gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnoff delay time T J = C t d(off) ns Fall time V CC = 6 V, I C = 4 A R g = t f 3 Turnoff switching loss V GE = V/ V E off.3 mj Turnoff delay time T J = C t d(off) 6 ns Fall time V CC = 6 V, I C = 4 A R g = t f 9 Turnoff switching loss V GE = V/ V E off.6 mj DIODE CHARACTERISTIC Forward voltage V GE = V, I F = 4 A V GE = V, I F = 4 A, T J = 7 C V F.3 3.7.7 V
NGTB4N3IHRWG TYPICAL CHARACTERISTICS T J = C V GE = to V 3 4 3 V 6 V V 9 V 8 V 7 V 7 8 T J = C 3 V GE = to V 3 V V V 9 V 8 V 7 V 4 6 7 8 V CE, COLLECTOREMITTER VOLTAGE (V) V CE, COLLECTOREMITTER VOLTAGE (V) Figure. Output Characteristics Figure. Output Characteristics V GE = to V 3 V V V 9 V 7 V T J = 4 C 8 V 3 4 6 7 8 6 4 8 6 4 T J = C T J = C 3 4 6 7 8 9 3 V CE, COLLECTOREMITTER VOLTAGE (V) V GE, GATEEMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics V CE, COLLECTOREMITTER VOLTAGE (V) 4. 4. I C = 8 A 3. C ies 3. I C = 4 A. I C = A. C oes. C res.. T J = C. 7 7 7 3 4 6 7 8 9 T J, JUNCTION TEMPERATURE ( C) V CE, COLLECTOREMITTER VOLTAGE (V) Figure. V CE(sat) vs. T J Figure 6. Typical Capacitance C, CAPACITANCE (pf) 3
NGTB4N3IHRWG TYPICAL CHARACTERISTICS 7 6 I F, FORWARD CURRENT (A) 6 4 3.. T J = C... T J = C 3. 3. 4. V GE, GATEEMITTER VOLTAGE (V) 4 8 6 4 V CE = 6 V V GE = V I C = 4 A V F, FORWARD VOLTAGE (V) Q G, GATE CHARGE (nc) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge. SWITCHING LOSS (mj).. 4 6 8 E off V CE = 6 V V GE = V I C = 4 A Rg = 4 6 SWITCHING TIME (ns) t d(off) t f V CE = 6 V V GE = V I C = 4 A Rg = 4 6 8 4 6 T J, JUNCTION TEMPERATURE ( C) Figure 9. Switching Loss vs. Temperature T J, JUNCTION TEMPERATURE ( C) Figure. Switching Time vs. Temperature SWITCHING LOSS (mj) 7 6 4 3 V CE = 6 V V GE = V T J = C Rg = E off 3 6 8 Figure. Switching Loss vs. I C SWITCHING TIME (ns) V CE = 6 V V GE = V T J = C Rg = t d(off) 3 6 8 Figure. Switching Time vs. I C t f 4
NGTB4N3IHRWG TYPICAL CHARACTERISTICS 4 SWITCHING LOSS (mj) 3. 3... 3 4 E off 6 V CE = 6 V V GE = V T J = C I C = 4 A 7 8 SWITCHING TIME (ns) V CE = 6 V V GE = V T J = C I C = 4 A 3 4 t d(off) 6 7 8 t f R g, GATE RESISTOR ( ) R g, GATE RESISTOR ( ) Figure 3. Switching Loss vs. R g Figure 4. Switching Time vs. R g 3. 3 SWITCHING LOSS (mj)... 3 3 4 4 E off I C = 4 A V GE = V T J = C Rg = 6 6 7 7 8 SWITCHING TIME (ns) t d(off) I C = 4 A V GE = V T J = C Rg = 3 3 4 t f 4 6 6 7 7 8 V CE, COLLECTOREMITTER VOLTAGE (V) V CE, COLLECTOREMITTER VOLTAGE (V) Figure. Switching Loss vs. V CE Figure 6. Switching Time vs. V CE.. dc operation Single Nonrepetitive Pulse T C = C Curves must be derated linearly with increase in temperature ms s s V CE, COLLECTOREMITTER VOLTAGE (V) Figure 7. Safe Operating Area V GE = V, T C = C V CE, COLLECTOREMITTER VOLTAGE (V) Figure 8. Reverse Bias Safe Operating Area
NGTB4N3IHRWG TYPICAL CHARACTERISTICS 4 T C = 8 C 6 6 Ipk (A) 8 6 4 T C = C V CE = 6 V, T J 7 C, R gate =, V GE = / V, T case = 8 C or C (as noted), D =... FREQUENCY (khz) Figure 9. Collector Current vs. Switching Frequency V (BR)CES (V) 4 4 3 3 4 3 6 8 3 T J, JUNCTION TEMPERATURE ( C) Figure. Typical V (BR)CES vs. Temperature % Duty Cycle R JC =.38 R(t) ( C/W). % R i ( C/W) i (sec) % Junction R R R n Case.77.74..884.73.398 %.643.97 C i = i /R i.639.646. %.486.6 C C C n.9..94.988 Duty Factor = t /t.783.93 Single Pulse.689.397 Peak T J = P DM x Z JC + T C.873.3364....... PULSE TIME (sec) Figure. IGBT Transient Thermal Impedance 6
NGTB4N3IHRWG Figure. Test Circuit for Switching Characteristics 7
NGTB4N3IHRWG Figure 3. Definition of Turn On Waveform 8
NGTB4N3IHRWG Figure 4. Definition of Turn Off Waveform 9
NGTB4N3IHRWG PACKAGE DIMENSIONS TO47 CASE 34AL ISSUE A E/ NOTE 4 D L X b NOTE 4 E 3 e A Q E NOTE 3 L NOTE c b4 3X b. M B A M A B A NOTE 7 SEATING PLANE S P.63 M B A M 4 NOTE 6 NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.M, 994.. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED.3 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L. 6. P SHALL HAVE A MAXIMUM DRAFT ANGLE OF. TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.9. 7. DIMENSION A TO BE MEASURED IN THE REGION DEFINED BY L. MILLIMETERS DIM MIN MAX A 4.7.3 A..6 b..4 b.6.3 b4.6 3.4 c.4.8 D.3.4 E. 6. E 4.3.49 e.4 BSC L 9.8.8 L 3. 4. P 3. 3.6 Q.4 6. S 6. BSC ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 63, Denver, Colorado 87 USA Phone: 33677 or 8344386 Toll Free USA/Canada Fax: 336776 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8898 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 4 33 79 9 Japan Customer Focus Center Phone: 8387 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGTB4N3IHR/D