EL ALFS series. Preliminary ALFS1BD-PA07001L1-AM. Features. Applications. Package:Cool White LEDs on Ceramic substrate

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EL ALFS series Preliminary Features Package:Cool White LEDs on Ceramic substrate Typ. PC Amber Wavelength:590~610 nm Typ. Luminous Flux:110 lm @ 700mA Viewing angle:cold White 120 o ESD up to 8KV MSL Level 2 Preconditioning; According to JEDEC J-STD 020D Level 1. Qualifications; According to AEC-Q101 Compliance with RoHS & REACH Applications Automotive Exterior Lighting, Headlamp, DRL,Fog lamp

Contents 1. Characteristics... 3 2. Absolute Maximum Ratings... 4 3. Characteristics Graph... 5 4. Binning Information... 10 5. Part Number... 13 6. Ordering Information... 14 7. Mechanical Dimension... 15 8. Recommended Soldering Pad... 16 9. Reflow Soldering Profile... 17 10. Packaging Information... 18 11. Handling of Silicon Resin for LEDs... 20 12. Precaution for Use... 21 2

1. Characteristics Parameter Symbol Min. Typ. Max. Unit Condition Luminous Flux [2][3][4] PC Amber Φ v 60 110 160 lm I F =700mA Forward Voltage [5] PC Amber V F 3 3.35 3.75 V I F =700mA Viewing Angle PC Amber ψ --- 120 --- deg I F =700mA Color PC Amber Bin Wd YA-YB Wd I F =700mA Thermal Resistance (Junction to Solder) Real R th JS real --- TBD --- Electrical R th JS el --- TBD --- K/W I F =700mA Notes: 1. Forward conditon by each of LED. 2. Luminous flux measurement tolerance: ±8%. 3. The data of luminous flux measured at thermal pad=25 C 4. Typical luminous flux or light output performance is operated within the condition guided by this datasheet. 5. Forward voltage measurement tolerance: ±0.05V 6. The Vf range shown in the table above indicates 99% output. 3

2. Absolute Maximum Ratings Parameter Symbol Ratings Unit Reverse Voltage V R Not designed for reverse operation V Power Dissipation P d 5.6 W Forward Current I F 50 ~ 1500 ma Junction Temperature T J 150 C Operating Temperature T opr -40 ~ +125 C Storage Temperature T stg -40 ~ +125 C ESD Sensitivity (R=1.5kΩ, C= 100pF) ESD HBM 8 KV Soldering Temperature Reflow 260 C 4

Relative Intensity DATASHEET 3. Characteristics Graph Wavelength Characteristics Relative Spectral Distribution @ Solder Pad Temperature = 25 C (PC Amber) ( Max.) V V f 1.2 1.0 PC Amber f 0.8 0.6 0.4 0.2 0.0 400 450 500 550 600 650 700 750 800 Wavelength [nm] Typical Diagram Characteristics of Radiation (PC Amber) ) V ( 0 V f Notes: 1. φ is the off axis angle from lamp centerline where the luminous intensity is 1/2 of the peak value. 2. View angle tolerance is ± 5 5

Forward Current [ma] DATASHEET 1500 Forward Current vs. Forward Voltage @ Solder Pad Temperature = 25 C I f F V F 1200 900 600 300 50 2.4 2.8 3.2 3.6 4.0 Forward Voltage [V] Relative Luminous Flux vs. Forward Current @Solder Pad Temperature = 25 C 2.0 0 V V 70 ma f I F Relative Luminous Flux 1.6 1.2 0.8 0.4 0.0 50 300 600 900 1200 1500 Forward Current [ma] 6

Relative Forward Voltage Chromaticity coordinates DATASHEET Chromaticity Coordinates vs. Forward Current @Solder Pad Temperature = 25 C 0.7 CIE x, CIE y f I F CIE x CIE y 0.6 0.5 0.4 0.3 50 300 600 900 1200 1500 Forward Current [ma] Relative Forward Voltage vs. Junction Temperature @Forward Current = 700mA 0.4 V F V F V F 25 C f T j 0.3 0.2 0.1 0.0-0.1-0.2-0.3-0.4-40 -20 0 20 40 60 80 100 120 140 Junction Temperature [C] 7

Chromaticity coordinates Relative Luminous Flux DATASHEET vrelative Luminous Flux vs. Junction Temperature @Forward Current = 700mA 1.4 V V 25 C f T j 1.2 1.0 0.8 0.6 0.4-40 -20 0 20 40 60 80 100 120 140 Junction Temperature [C] Chromaticity Coordinates Shift CIE X/Y vs. Junction Temperature @Forward Current = 700mA 0.7 0.6 CIE x, CIE y f T j CIE x CIE y 0.5 0.4 0.3-40 -20 0 20 40 60 80 100 120 140 Junction Temperature [C] 8

I F Forward Current [ma] DATASHEET Forward Current Derating Curve @ Soldering Temperature I f F T S 1800 1500 1200 900 600 300 0 0 25 50 75 100 125 150 T s Solder Pad Temperature [C] 9

4. Binning Information Luminous Intensity Bins [ Cool White ] Group A B Minimum Maximum Bin Photometric Photometric Flux (lm) Flux (lm) 8 60 80 9 80 100 1 100 120 2 120 140 3 140 160 Notes: 1. Luminous flux measurement tolerance: ±8%. 2. Highlighted Black Box is available bins. 10

Forward Voltage Bins Group Minimum Forward Maximum Forward Voltage(V) Voltage(V) 1A 3.00 3.25 1B 3.25 3.50 1C 3.50 3.75 Notes: 1. Forward Voltage measurement tolerance: ±0.1V. 11

CIE y DATASHEET PC Amber Color Bin Structure ECE White Bin Structure CIE x PC Amber Bin Coordinates Bin CIE x CIE y Bin CIE x CIE y 0.5680 0.4315 0.5763 0.4054 YA 0.5634 0.4269 0.5833 0.4075 YB 0.5833 0.4075 0.5634 0.4269 0.5901 0.4094 0.5557 0.4192 Notes: Color coordinates measurement allowance: ±0.005. 12

5. Part Number Part number is designated with below details. ALFS = product family name. 1 = chip number B = Product type D = Device PA= color [1] 0700 = test current [ma] 1 = internal code L1 = Brightness Level AM = automotive application Note [1] Color: Symbol C0 PA Description No CRI restriction PC Amber 13

6. Ordering Information ALFS1BD-C007001L1- ABCDEFGHIJKLMN-OP-AM Order code contains information with below details: ABCDEF = min/max wavelength or CCT GHIJ = min./max. luminous flux in [lm] or luminous intensity in [mcd] KLMN = min./max. Forward Voltage OP = Packing quantity (Minimum package) Part Number of the ALFS Order Code ALFS1BD- PA07001L1-64D53AA8B31A1C-2T-AM 14

7. Mechanical Dimension Notes: 1. Dimensions are in millimeters. 2. Tolerances unless mentioned are ± 0.1mm. 3. The thermal pad is electrically connected to the Anode soldering pad. 15

8. Recommended Soldering Pad We recommend Cu area like below drawing. You can use this recommendation when you draw your module design. (MCPCB information; Cu thickness 35um, dielectric layer 100um, 2W/mK, Al thickness 1.5mm) Ts point Thermal pad (+) (-) Cu open area Cu pattern 16

9. Reflow Soldering Profile Soldering Condition (Reference: IPC/JEDEC J-STD-020D) Profile Feature Pb-Free Assembly Unit Einheit Ramp-up rate to preheat 25 C to 150 C 3 C /sec Time of soaking zone 150 C to 200 C 120 sec Ramp-up rate to peak 3 C /sec Liquidus temperature 217 C Time above liquidus temperature 100 sec Peak temperature (max.) 260 C Time within 5 C of the specified peak temperature 30 sec Ramp-down Rate (max.) 6 C /sec 17

10. Packaging Information Product Labeling CPN:Customer s Product Number P/N:Everlight Part Number LOT NO:Lot Number QTY:Packing Quantity HUE:Color Bin CAT:Luminous Flux (Brightness) Bin REF:Forward Voltage Bin Moisture Resistant Packing Process Label Aluminum Aluminum moisture-proof moistue-proof bag bag Desiccant Label 18

Carrier Tape Dimensions as the following: Reel: 200pcs, MOQ> 100pcs (has to be a multiple of 100pcs) Feed Direction (+) (-) Reel Dimensions Notes: 1. Dimensions are in millimeters. 2. Tolerances unless mentioned are ±0.2mm. 19

11. Handling of Silicon Resin for LEDs Do not put mechanical stress on the LED. When handling the product, do not apply direct pressure on the optical surface. The LED surface could be damaged, which could affect the optical performance of the LED. In low-humidity work environment, please keep handling the LEDs with appropriate ESD grounding. It is recommended to handle the LED with powder-less latex gloves. Do not touch the resin with tweezers to avoid scratching or other damage. 20

12. Precaution for Use Before the package is opened, the LEDs should be stored at 30 C or less and 60%RH or less after being shipped from Everlight and the storage life limits are 12 months. After opening the package, all unused LEDs are recommended to be stored in moisture proof packages. If the moisture absorbent material (silica gel) has exceeded effectiveness or the LEDs have exceeded the storage time, baking treatment should be performed using the following conditions. Baking treatment: 60±5 C for 24 hours. 21