CAT24C01/02/04/08/16. 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb CMOS Serial EEPROM DEVICE DESCRIPTION FEATURES PIN FUNCTIONS

Similar documents
CAT24C Kb I 2 C CMOS Serial EEPROM

CAT24C02, CAT24C04, CAT24C08, CAT24C16. EEPROM Serial 2/4/8/16 Kb I 2 C

CAT24C kb CMOS Serial EEPROM, Cascadable

128-Kb I 2 C CMOS Serial EEPROM

64-Kb I 2 C CMOS Serial EEPROM

CAT24C Kb I 2 C CMOS Serial EEPROM

CAT24C Kb I 2 C CMOS Serial EEPROM

SP490/SP491. Full Duplex RS-485 Transceivers. Now Available in Lead Free Packaging

CAT24C kb I 2 C CMOS Serial EEPROM

CAT24C21. 1 kb Dual Mode Serial EEPROM for VESA Plug-and-Play

SP1001 Series - 8pF 15kV Unidirectional TVS Array

CAT24C kb I 2 C CMOS Serial EEPROM

Precision Micropower 2.5V ShuntVoltage Reference

CAT93C46. 1 kb Microwire Serial EEPROM

General Purpose ESD Protection - SP1001 Series. Description. Features. Applications

CAT93C56, CAT93C57. 2-Kb Microwire Serial CMOS EEPROM. CAT93C57 Not Recommended for New Designs: Replace with CAT93C56

CAT Kb SPI Serial CMOS EEPROM

100-Tap Digitally Programmable Potentiometer (DPP )

32-Tap Digitally Programmable Potentiometer (DPP )

Low Capacitance ESD Protection - SP3003 Series. Description. Features. Applications. LCD/ PDP TVs DVD Players Desktops MP3/ PMP Digital Cameras

CAT24C Kb I 2 C CMOS Serial EEPROM

100-Tap Digitally Programmable Potentiometer (DPP )

CAT25080, CAT Kb and 16-Kb SPI Serial CMOS EEPROM

20-V N-Channel 1.8-V (G-S) MOSFET

NLX3G17. Triple Non-Inverting Schmitt-Trigger Buffer

DATA SHEET. PDTA124E series PNP resistor-equipped transistors; R1 = 22 kω, R2 = 22 kω DISCRETE SEMICONDUCTORS

NLX1G10. 3-Input NAND Gate

N57M tap Digital Potentiometer (POT)

DATA SHEET. PDTC144W series NPN resistor-equipped transistors; R1=47kΩ, R2 = 22 kω DISCRETE SEMICONDUCTORS

100-Tap Digitally Programmable Potentiometer (DPP )

Multiple RS-232 Drivers & Receivers

256K (32K x 8) OTP EPROM AT27C256R

32-Tap Digitally Programmable Potentiometer (DPP )

NLX2G00. Dual 2-Input NAND Gate

NLU2G16. Dual Non-Inverting Buffer

NLU1GT32. Single 2-Input OR Gate, TTL Level. LSTTL Compatible Inputs

NLU2G17. Dual Non-Inverting Schmitt-Trigger Buffer

NLU1GT86. Single 2-Input Exclusive OR Gate, TTL Level. LSTTL Compatible Inputs

G D S. Drain-Source Voltage 30 V Gate-Source Voltage. at T =100 C Continuous Drain Current 3

Ph.D. students Department of Electronics and Telecommunications, Politecnico di Torino

ECE602 Exam 1 April 5, You must show ALL of your work for full credit.

G D S. Drain-Source Voltage 60 V Gate-Source Voltage + 20 V. at T =100 C Continuous Drain Current 3. Linear Derating Factor 0.

2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK. Outline. Base UMT3. Base. Package size (mm) Taping code

CAT25010, CAT25020, CAT Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM

REFLECTIVE OBJECT SENSOR

DUAL P-CHANNEL MATCHED MOSFET PAIR

DATA SHEET. PDTA124E series PNP resistor-equipped transistors; R1 = 22 kω, R2 = 22 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTC114Y series NPN resistor-equipped transistors; R1 = 10 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

2/12/2013. Overview. 12-Power Transmission Text: Conservation of Complex Power. Introduction. Power Transmission-Short Line

MA 262, Spring 2018, Final exam Version 01 (Green)

Design Guidelines for Quartz Crystal Oscillators. R 1 Motional Resistance L 1 Motional Inductance C 1 Motional Capacitance C 0 Shunt Capacitance

Random Access Techniques: ALOHA (cont.)

Physical Organization

Item. Recommended LC Driving Voltage for Standard Temp. Modules

First derivative analysis

7WB Bit Bus Switch. The 7WB3306 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

Chapter 6 Folding. Folding

IXTT3N200P3HV IXTH3N200P3HV

Definition1: The ratio of the radiation intensity in a given direction from the antenna to the radiation intensity averaged over all directions.

512K (64K x 8) OTP EPROM AT27C512R

Searching Linked Lists. Perfect Skip List. Building a Skip List. Skip List Analysis (1) Assume the list is sorted, but is stored in a linked list.

MCE503: Modeling and Simulation of Mechatronic Systems Discussion on Bond Graph Sign Conventions for Electrical Systems

Problem Set #2 Due: Friday April 20, 2018 at 5 PM.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD )

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

General Notes About 2007 AP Physics Scoring Guidelines

N-Channel 40-V (D-S) MOSFET

ph People Grade Level: basic Duration: minutes Setting: classroom or field site

TEMASEK JUNIOR COLLEGE, SINGAPORE. JC 2 Preliminary Examination 2017

Differential Equations

Aim To manage files and directories using Linux commands. 1. file Examines the type of the given file or directory

Three-wire Serial EEPROMs AT93C46 AT93C56 (1) AT93C66 (2)

P-Channel 1.8-V (G-S) MOSFET

IXBT22N300HV IXBH22N300HV

4. (5a + b) 7 & x 1 = (3x 1)log 10 4 = log (M1) [4] d = 3 [4] T 2 = 5 + = 16 or or 16.

P-Channel 30-V (D-S) MOSFET

Continuous probability distributions

CAT93C86B. 16-Kb Microwire Serial EEPROM

Computing and Communications -- Network Coding

EEO 401 Digital Signal Processing Prof. Mark Fowler

Higher order derivatives

20 V N-Channel 1.8 V (G-S) MOSFET

Unfired pressure vessels- Part 3: Design

Chip Monolithic Ceramic Capacitor

Difference -Analytical Method of The One-Dimensional Convection-Diffusion Equation

Image Filtering: Noise Removal, Sharpening, Deblurring. Yao Wang Polytechnic University, Brooklyn, NY11201

What are those βs anyway? Understanding Design Matrix & Odds ratios

Addition of angular momentum

The Transmission Line Wave Equation

SPI Serial EEPROMs AT25128 AT Features. Description. Pin Configurations. 128K (16,384 x 8) 256K (32,768 x 8)

Tap Changer Type MHZ Specification, Assembly and Materials

Answer Homework 5 PHA5127 Fall 1999 Jeff Stark

Transitional Probability Model for a Serial Phases in Production

Outline. Thanks to Ian Blockland and Randy Sobie for these slides Lifetimes of Decaying Particles Scattering Cross Sections Fermi s Golden Rule

BINOMIAL COEFFICIENTS INVOLVING INFINITE POWERS OF PRIMES. 1. Statement of results

CAT93C46B. 1-Kb Microwire Serial EEPROM

Y 0. Standing Wave Interference between the incident & reflected waves Standing wave. A string with one end fixed on a wall

Transcription:

2401/02/04/08/16 1-, 2-, 4-, 8- and 16- MO rial PROM FUR upports tandard and Fast I 2 Protocol 1.8 V to 5.5 V upply Voltag Rang 16-Byt Pag Writ Buffr Hardwar Writ Protction for ntir mmory chmitt riggrs and Nois upprssion Filtrs on I 2 Bus Inputs ( and ). ow powr MO tchnology 1,000,000 program/ras cycls 100 yar data rtntion Industrial tmpratur rang RoH-compliant 8-lad PIP, OI, and OP, 8-pad FN and 5-lad O-23 packags. For Ordring Information dtails, s pag 17. VI RIPION h 2401/02/04/08/16 ar 1-, 2-, 4-, 8- and 16- rspctivly MO rial PROM dvics organizd intrnally as 8/16/32/64 and 128 pags rspctivly of 16 yts ach. ll dvics support oth th tandard (100 khz) as wll as Fast (400 khz) I 2 protocol. ata is writtn y providing a starting addrss, thn loading 1 to 16 contiguous yts into a Pag Writ Buffr, and thn writing all data to non-volatil mmory in on intrnal writ cycl. ata is rad y providing a starting addrss and thn shifting out data srially whil automatically incrmnting th intrnal addrss count. xtrnal addrss pins mak it possil to addrss up to ight 2401 or 2402, four 2404, two 2408 and on 2416 dvic on th sam us. PIN ONFIGURION FUNION YMBO PIP () OI (W) OP (Y) FN (VP2) O-23 () V 2416 / 08 / 04 / 02 / 01 N / N / N / 0 / 0 N / N / 1 / 1 / 1 N / 2 / 2 / 2 / 2 V 1 2 3 4 8 7 6 5 V WP V 1 2 3 5 4 WP V 2, 1, 0 24xx For th location of Pin 1, plas consult th corrsponding packag drawing. WP PIN FUNION 0, 1, 2 WP V V N vic ddrss Inputs rial ata Input/Output rial lock Input Writ Protct Input Powr upply Ground No onnct V * atalyst carris th I 2 protocol undr a licns from th Philips orporation. 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic 1 oc. No. 1115, Rv. B

2401/02/04/08/16 BOU MXIMUM RING (1) torag mpratur Voltag on ny Pin with Rspct to Ground (2) -65 to +150-0.5 V to +6.5 V RIBIIY HRRII (3) ymol Paramtr Min Units N (4) N nduranc 1,000,000 Program/ ras ycls R ata Rtntion 100 Yars.. OPRING HRRII V = 1.8 V to 5.5 V, = -40 to 85, unlss othrwis spcifid. ymol Paramtr st onditions Min Max Units I R Rad urrnt Rad, f = 400 khz 1 m I W Writ urrnt Writ, f = 400 khz 1 m I B tandy urrnt ll I/O Pins at GN or V 1 μ I I/O Pin akag Pin at GN or V 1 μ V I Input ow Voltag -0.5 V x 0.3 V V IH Input High Voltag V x 0.7 V + 0.5 V V O1 Output ow Voltag V 2.5 V, I O = 3.0 m 0.4 V V O2 Output ow Voltag V < 2.5 V, I O = 1.0 m 0.2 V PIN IMPN HRRII V = 1.8 V to 5.5 V, = -40 to 85, unlss othrwis spcifid. ymol Paramtr onditions Max Units (3) IN I/O Pin apacitanc V IN = 0 V 8 pf (3) IN Input apacitanc (othr pins) V IN = 0 V 6 pf I (5) WP WP Input urrnt V IN < V IH, V = 5.5 V 200 V IN < V IH, V = 3.3 V 150 V IN < V IH, V = 1.8 V 100 V IN > V IH 1 μ Not: (1) trsss aov thos listd undr solut Maximum Ratings may caus prmannt damag to th dvic. hs ar strss ratings only, and functional opration of th dvic at ths or any othr conditions outsid of thos listd in th oprational sctions of this spcification is not implid. xposur to any asolut maximum rating for xtndd priods may affct dvic prformanc and rliaility. (2) h input voltag on any pin should not lowr than -0.5 V or highr than V + 0.5 V. uring transitions, th voltag on any pin may undrshoot to no lss than -1.5 V or ovrshoot to no mor than V + 1.5 V, for priods of lss than 20 ns. (3) hs paramtrs ar tstd initially and aftr a dsign or procss chang that affcts th paramtr according to appropriat -Q100 and J tst mthods. (4) Pag Mod, V = 5 V, 25 (5) Whn not drivn, th WP pin is pulld down to GN intrnally. For improvd nois immunity, th intrnal pull-down is rlativly strong; thrfor th xtrnal drivr must al to supply th pull-down currnt whn attmpting to driv th input HIGH. o consrv powr, as th input lvl xcds th trip point of th MO input uffr (~ 0.5 x V ), th strong pull-down rvrts to a wak currnt sourc. oc. No. 1115, Rv. B 2 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic

2401/02/04/08/16.. HRRII (1) V = 1.8 V to 5.5 V, = -40 to 85. tandard Fast ymol Paramtr Min Max Min Max Units F lock Frquncy 100 400 khz t H: R ondition Hold im 4 0.6 μs t OW ow Priod of lock 4.7 1.3 μs t HIGH High Priod of lock 4 0.6 μs t U: R ondition tup im 4.7 0.6 μs t H: ata In Hold im 0 0 μs t U: ata In tup im 250 100 ns t R and Ris im 1000 300 ns t (2) F and Fall im 300 300 ns t U:O OP ondition tup im 4 0.6 μs t BUF Bus Fr im Btwn OP and R 4.7 1.3 μs t ow to ata Out Valid 3.5 0.9 μs t H ata Out Hold im 100 100 ns (2) i Nois Puls Filtrd at and Inputs 100 100 ns t U:WP WP tup im 0 0 μs t H:WP WP Hold im 2.5 2.5 μs t WR Writ ycl im 5 5 ms t (2, 3) PU Powr-up to Rady Mod 1 1 ms Not: (1) st conditions according to.. st onditions tal. (2) std initially and aftr a dsign or procss chang that affcts this paramtr. (3) t PU is th dlay twn th tim V is stal and th dvic is rady to accpt commands... ONIION Input vls Input Ris and Fall ims Input Rfrnc vls Output Rfrnc vls Output oad 0.2 x V to 0.8 x V 50 ns 0.3 x V, 0.7 x V 0.5 x V urrnt ourc: I O = 3 m (V 2.5 V); I O = 1 m (V < 2.5 V); = 100 pf 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic 3 oc No. 1115, Rv. B

2401/02/04/08/16 POWR-ON R (POR) ach 24xx* incorporats Powr-On Rst (POR) circuitry which protcts th intrnal logic against powring up in th wrong stat. 24xx dvic will powr up into tandy mod aftr V xcds th POR triggr lvl and will powr down into Rst mod whn V drops low th POR triggr lvl. his i-dirctional POR fatur protcts th dvic against rown-out failur following a tmporary loss of powr. * For common faturs, th 2401/02/04/08/16 will rfrd to as 24xx PIN RIPION : h rial lock input pin accpts th rial lock gnratd y th Mastr. : h rial ata I/O pin rcivs input data and transmits data stord in PROM. In transmit mod, this pin is opn drain. ata is acquird on th positiv dg, and is dlivrd on th ngativ dg of. 0, 1 and 2: h ddrss inputs st th dvic addrss whn cascading multipl dvics. Whn not drivn, ths pins ar pulld OW intrnally. WP: h Writ Protct input pin inhiits all writ oprations, whn pulld HIGH. Whn not drivn, this pin is pulld OW intrnally. FUNION RIPION h 24xx supports th Intr-Intgratd ircuit (I 2 ) Bus data transmission protocol, which dfins a dvic that snds data to th us as a transmittr and a dvic rciving data as a rcivr. ata flow is controlld y a Mastr dvic, which gnrats th srial clock and all R and OP conditions. h 24xx acts as a lav dvic. Mastr and lav altrnat as ithr transmittr or rcivr. I 2 BU PROOO h I 2 us consists of two wirs, and. h two wirs ar connctd to th V supply via pull-up rsistors. Mastr and lav dvics connct to th 2- wir us via thir rspctiv and pins. h transmitting dvic pulls down th lin to transmit a 0 and rlass it to transmit a 1. ata transfr may initiatd only whn th us is not usy (s.. haractristics). uring data transfr, th lin must rmain stal whil th lin is HIGH. n transition whil is HIGH will intrprtd as a R or OP condition (Figur 1). h R condition prcds all commands. It consists of a HIGH to OW transition on whil is HIGH. h R acts as a wak-up call to all rcivrs. snt a R, a lav will not rspond to commands. h OP condition complts all commands. It consists of a OW to HIGH transition on whil is HIGH. vic ddrssing h Mastr initiats data transfr y crating a R condition on th us. h Mastr thn roadcasts an 8-it srial lav addrss. For normal Rad/Writ oprations, th first 4 its of th lav addrss ar fixd at 1010 (h). h nxt 3 its ar usd as programmal addrss its whn cascading multipl dvics and/or as intrnal addrss its. h last it of th slav addrss, R/W, spcifis whthr a Rad (1) or Writ (0) opration is to prformd. h 3 addrss spac xtnsion its ar assignd as illustratd in Figur 2. 2, 1 and 0 must match th stat of th xtrnal addrss pins, and a 10, a 9 and a 8 ar intrnal addrss its. cknowldg ftr procssing th lav addrss, th lav rsponds with an acknowldg () y pulling down th lin during th 9 th clock cycl (Figur 3). h lav will also acknowldg th addrss yt and vry data yt prsntd in Writ mod. In Rad mod th lav shifts out a data yt, and thn rlass th lin during th 9 th clock cycl. s long as th Mastr acknowldgs th data, th lav will continu transmitting. h Mastr trminats th sssion y not acknowldging th last data yt (No) and y issuing a OP condition. Bus timing is illustratd in Figur 4. oc. No. 1115, Rv. B 4 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic

2401/02/04/08/16 Figur 1. R/OP onditions R ONIION OP ONIION Figur 2. lav ddrss Bits 1 0 1 0 2 1 0 R/W 2401 and 2402 1 0 1 0 2 1 a 8 R/W 2404 1 0 1 0 2 a 9 a 8 R/W 2408 1 0 1 0 a10 a9 a8 R/W 2416 Figur 3. cknowldg iming BU R Y (RNMIR) BU R Y (RIVR) FROM MR 1 8 9 OUPU FROM RNMIR OUPU FROM RIVR R Y ( t) UP ( t U: ) Figur 4. Bus iming t F t HIGH t R t OW t OW t U: t H: t H: t U: t U:O IN t t H t BUF OU 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic 5 oc No. 1115, Rv. B

2401/02/04/08/16 WRI OPRION Byt Writ In Byt Writ mod, th Mastr snds th R condition and th lav addrss with th R/W it st to zro to th lav. ftr th lav gnrats an acknowldg, th Mastr snds th yt addrss that is to writtn into th addrss pointr of th 24xx. ftr rciving anothr acknowldg from th lav, th Mastr transmits th data yt to writtn into th addrssd mmory location. h 24xx dvic will acknowldg th data yt and th Mastr gnrats th OP condition, at which tim th dvic gins its intrnal Writ cycl to nonvolatil mmory (Figur 5). Whil this intrnal cycl is in progrss (t WR ), th output will tri-statd and th 24xx will not rspond to any rqust from th Mastr dvic (Figur 6). Hardwar Writ Protction With th WP pin hld HIGH, th ntir mmory is protctd against Writ oprations. If th WP pin is lft floating or is groundd, it has no impact on th opration of th 24xx. h stat of th WP pin is strod on th last falling dg of immdiatly prcding th first data yt (Figur 8). If th WP pin is HIGH during th stro intrval, th 24xx will not acknowldg th data yt and th Writ rqust will rjctd. livry tat h 24xx is shippd rasd, i.., all yts ar FFh. Pag Writ h 24xx writs up to 16 yts of data in a singl writ cycl, using th Pag Writ opration (Figur 7). h Pag Writ opration is initiatd in th sam mannr as th Byt Writ opration, howvr instad of trminating aftr th data yt is transmittd, th Mastr is allowd to snd up to fiftn additional yts. ftr ach yt has n transmittd th 24xx will rspond with an acknowldg and intrnally incrmnts th four low ordr addrss its. h high ordr its that dfin th pag addrss rmain unchangd. If th Mastr transmits mor than sixtn yts prior to snding th OP condition, th addrss countr wraps around to th ginning of pag and prviously transmittd data will ovrwrittn. Onc all sixtn yts ar rcivd and th OP condition has n snt y th Mastr, th intrnal Writ cycl gins. t this point all rcivd data is writtn to th 24xx in a singl writ cycl. cknowldg Polling h acknowldg () polling routin can usd to tak advantag of th typical writ cycl tim. Onc th stop condition is issud to indicat th nd of th host s writ opration, th 24xx initiats th intrnal writ cycl. h polling can initiatd immdiatly. his involvs issuing th start condition followd y th slav addrss for a writ opration. If th 24xx is still usy with th writ opration, No will rturnd. If th 24xx has compltd th intrnal writ opration, an will rturnd and th host can thn procd with th nxt rad or writ opration. oc. No. 1115, Rv. B 6 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic

2401/02/04/08/16 Figur 5. Byt Writ qunc BU IVIY: MR R V R R a7 a0 d7 d0 O P P V * For th 2401 a7 = 0 Figur 6. Writ ycl iming 8 th Bit Byt n t WR OP ONIION R ONIION R Figur 7. Pag Writ qunc BU IVIY: MR R V R R n n+1 n+p O P P V n = 1 P 15 Figur 8. WP iming R 1 8 9 1 8 a7 a0 d7 d0 tu:wp WP th:wp 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic 7 oc No. 1115, Rv. B

2401/02/04/08/16 R OPRION Immdiat Rad Upon rciving a lav addrss with th R/W it st to 1, th 24xx will intrprt this as a rqust for data rsiding at th currnt yt addrss in mmory. h 24xx will acknowldg th lav addrss, will immdiatly shift out th data rsiding at th currnt addrss, and will thn wait for th Mastr to rspond. If th Mastr dos not acknowldg th data (No) and thn follows up with a OP condition (Figur 9), th 24xx rturns to tandy mod. lctiv Rad lctiv Rad oprations allow th Mastr dvic to slct at random any mmory location for a rad opration. h Mastr dvic first prforms a dummy writ opration y snding th R condition, slav addrss and yt addrss of th location it wishs to rad. ftr th 24xx acknowldgs th yt addrss, th Mastr dvic rsnds th R condition and th slav addrss, this tim with th R/W it st to on. h 24xx thn rsponds with its acknowldg and snds th rqustd data yt. h Mastr dvic dos not acknowldg th data (No) ut will gnrat a OP condition (Figur 10). quntial Rad If during a Rad sssion, th Mastr acknowldgs th 1 st data yt, thn th 24xx will continu transmitting data rsiding at susqunt locations until th Mastr rsponds with a No, followd y a OP (Figur 11). In contrast to Pag Writ, during quntial Rad th addrss count will automatically incrmnt to and thn wrap-around at nd of mmory (rathr than nd of pag). In th 2401, th intrnal addrss count will not wrap around at th nd of th 128 yt mmory spac. oc. No. 1115, Rv. B 8 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic

2401/02/04/08/16 Figur 9. Immdiat Rad qunc and iming BU IVIY: MR R V R N O O P P V 8 9 8th Bit OU NO OP Figur 10. lctiv Rad qunc BU IVIY: MR R V R R R V R N O O P P V Figur 11. quntial Rad qunc BU IVIY: MR V R N O O P P V n n+1 n+2 n+x 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic 9 oc No. 1115, Rv. B

2401/02/04/08/16 8-300 MI WI PI IP () 1 2 1 B 2 YMBO 4.57 1 0.38 2 3.05 3.81 2 1 B MIN NOM MX 0.36 1.14 0.46 0.56 1.77 9.02 7.62 6.09 7.87 6.35 10.16 8.25 7.11 2.54 B 7.87 0.115 0.130 9.65 0.150 2416_8-_IP_(300P).ps Nots: 1. ll dimnsions ar in millimtrs. 2. omplis with J tandard M001. 3. imnsioning and tolrancing pr NI Y14.5M-1982 oc. No. 1115, Rv. B 10 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic

2401/02/04/08/16 8-150 MI WI OI (W) 1 h x 45 θ1 1 YMBO 1 1 h MIN 0.10 1.35 0.33 0.19 4.80 5.80 3.80 0.25 0.40 NOM 1.27 B MX 0.25 1.75 0.51 0.25 5.00 6.20 4.00 0.50 1.27 θ1 0 8 2416_8-_OI.ps For currnt ap and Rl information, download th PF fil from: http://www.catsmi.com/documnts/tapandrl.pdf. Nots: 1. ll dimnsions ar in millimtrs. 2. omplis with J spcification M-012 dimnsions. 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic 11 oc No. 1115, Rv. B

2401/02/04/08/16 8- OP (Y) 8 5 I c 1 /2 1 4 GG PN PIN #1 IN. 2 θ1 I ING PN 0.25 1 YMBO 1 2 c 1 θ1 MIN NOM 0.05 0.80 0.90 0.19 0.09 2.90 3.00 6.30 6.4 4.30 4.40 0.65 B 0.50 MX 1.20 0.15 1.05 0.30 0.20 3.10 6.50 4.50 0.60 0.75 0.00 8.00 For currnt ap and Rl information, download th PF fil from: http://www.catsmi.com/documnts/tapandrl.pdf. Nots: 1. ll dimnsions ar in millimtrs. 2. omplis with J spcification MO-153. oc. No. 1115, Rv. B 12 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic

2401/02/04/08/16 8-P FN 2X3 PG (VP2) PIN 1 INX R 1 2 2 3 YMBO MIN NOM MX 1 2 3 2 2 0.70 0.00 0.45 0.75 0.02 0.55 0.20 RF 0.25 2.00 0.80 0.05 0.65 0.20 1.90 1.30 1.40 0.30 2.10 1.50 2.90 1.20 3.00 1.30 0.50 YP 3.10 1.40 0.20 0.30 0.40 2 PIN 1 I 3 x For currnt ap and Rl information, download th PF fil from: http://www.catsmi.com/documnts/tapandrl.pdf. FN2X3 (03).ps Nots: 1. ll dimnsions ar in millimtrs. 2. omplis with J spcification MO-229. 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic 13 oc No. 1115, Rv. B

2401/02/04/08/16 5-ad O-23 () 1 1 1 2 c GUG PN 1 1 2 θ YMBO 1 2 c 1 1 1 2 θ MIN 0.01 0.80 0.30 0.12 0.30 0 NOM 0.05 0.87 0.15 2.90 B 2.80 B 1.60 B 0.95 B 1.90 B 0.40 0.60 RF 0.25 B MX 1.0 0.1 0.9 0.45 0.20 0.50 8 For currnt ap and Rl information, download th PF fil from: http://www.catsmi.com/documnts/tapandrl.pdf. Nots: 1. ll dimnsions ar in millimtrs. 2. omplis with J spcification MO-193. oc. No. 1115, Rv. B 14 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic

2401/02/04/08/16 PG MRING 8-ad PIP 8-ad OI 24XXI FYYWWR 24XXWI FYYWWR I = atalyst miconductor, Inc. XX = vic od (s Marking od tal low) I = mpratur Rang YY = Production Yar WW = Production Wk R = Product Rvision (s Marking od tal low) F = ad Finish 4 = NiPdu 3 = Matt-in I = atalyst miconductor, Inc. XX = vic od (s Marking od tal low) I = mpratur Rang YY = Production Yar WW = Production Wk R = Product Rvision (s Marking od tal low) F = ad Finish 4 = NiPdu 3 = Matt-in 8-ad OP YMRF 24XXI Y = Production Yar M = Production Month R = i Rvision (s Marking od tal low) XX = vic od (s Marking od tal low) I = mpratur Rang WW = Production Wk F = ad Finish 4 = NiPdu 3 = Matt-in vic od XX Marking ods Product Rvision R 2401 01 G 2402 02 G 2404 04 J 2408 08 H 2416 16 G Not: (1) h circl on th packag marking indicats th location of Pin 1. 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic 15 oc No. 1115, Rv. B

2401/02/04/08/16 PG MRING 8-Pad FN 5-ad O X X N N N N XXYM Y M XX = N = Y = M = vic od Matt-in NiPdu 2401 Rv. G P 2402 Rv. G R B 2404 Rv. J 2408 Rv. H 2416 Rv. G U Z racal od Production Yar Production Month XX = Y = M = vic od Matt-in NiPdu 2401 Rv. G R MM 2402 Rv. G RB MN 2404 Rv. J R MP 2408 Rv. H R MR 2416 Rv. G R M Production Yar Production Month Nots: (1) h circl on th packag marking indicats th location of Pin 1. (2) For FN and OP packags, th Product Rvision marking is includd in th vic od (XX). oc. No. 1115, Rv. B 16 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic

2401/02/04/08/16 XMP OF ORRING INFORMION Prfix vic # uffix 2416 Y I G 3 ompany I Product Numr 2401 2402 2404 2408 2416 Packag : PIP W: OI, J Y: OP VP2: FN : O mpratur Rang I = Industrial (-40 to +85 ) ad Finish G: NiPdu Blank: Matt-in : ap & Rl 3: 3000/Rl Nots: (1) ll packags ar RoH-compliant (ad-fr, Halogn-fr). (2) h standard lad finish is NiPdu pr-platd (PPF) lad frams. (3) h dvic usd in th aov xampl is a 2416YI-G3 (OP, Industrial mpratur, NiPdu, ap & Rl). (4) For additional packag and tmpratur options, plas contact your narst atalyst miconductor als offic. 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic 17 oc No. 1115, Rv. B

RVIION HIORY at Rvision ommnts 07/18/06 omin 5 data shts into on data sht. 07/31/06 B Updat Packag Marking opyrights, radmarks and Patnts radmarks and rgistrd tradmarks of atalyst miconductor includ ach of th following: PP 2 MiniPot atalyst miconductor has n issud U.. and forign patnts and has patnt applications pnding that protct its products. Y MIONUOR M NO WRRNY, RPRNION OR GURN, XPR OR IMPI, RGRING H UIBIIY OF I PROU FOR NY PRIUR PURPO, NOR H H U OF I PROU WI NO INFRING I INU PROPRY RIGH OR H RIGH OF HIR PRI WIH RP O NY PRIUR U OR PPIION N PIFIY IIM NY N IBIIY RIING OU OF NY UH U OR PPIION, INUING BU NO IMI O, ONQUNI OR ININ MG. atalyst miconductor products ar not dsignd, intndd, or authorizd for us as componnts in systms intndd for surgical implant into th ody, or othr applications intndd to support or sustain lif, or for any othr application in which th failur of th atalyst miconductor product could crat a situation whr prsonal injury or dath may occur. atalyst miconductor rsrvs th right to mak changs to or discontinu any product or srvic dscrid hrin without notic. Products with data shts lald dvanc Information or Prliminary and othr products dscrid hrin may not in production or offrd for sal. atalyst miconductor adviss customrs to otain th currnt vrsion of th rlvant product information for placing ordrs. ircuit diagrams illustrat typical smiconductor applications and may not complt. atalyst miconductor, Inc. orporat Hadquartrs 2975 tndr Way anta lara, 95054 Phon: 408.542.1000 Fax: 408.542.1200 www.catsmi.com Pulication #: 1115 Rvison: B Issu dat: 07/31/06