Small Signal Zener Diodes DESIGN SUPPORT TOOLS click logo to get started FEATURES Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise V Z - tolerance ± 5 % AEC-Q qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Models Available PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 2.4 to 75 V Test current I ZT.7 to 2 ma V Z specification Circuit configuration Thermal equilibrium Single APPLICATIONS Voltage stabilization ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY TZQ522B to TZQ5267-series-GS8 (per 3" reel) /box -series-gs8 25 (per 7" reel) 2 5/box PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING QuadroMELF (SOD-8) 34 mg UL 94 V- MOISTURE SENSITIVITY LEVEL MSL level (according J-STD-2) SOLDERING CONDITIONS 26 C/ s at terminals ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation R thja 3 K/W P tot 5 mw Zener current I Z P tot /V Z ma Junction to ambient air On PC board 5 mm x 5 mm x.6 mm R thja 5 K/W Junction temperature, maximum T j 75 C Storage temperature range T stg -65 to +75 C Forward voltage (max.) I F = 2 ma V F.5 V Rev..9, 22-Feb-8 Document Number: 8562 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) ZENER VOLTAGE RANGE TEST CURRENT REVERSE LAEKAGE CURRENT DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT PART NUMBER V Z at I ZT I ZT I ZT2 I R at V R Z Z at I ZT Z ZK at I ZT2 TK VZ V ma μa V %/K NOM. TZQ522B 2.4 2.25 < < 3 < 2 < -.85 TZQ5222B 2.5 2.25 < < 3 < 25 < -.85 TZQ5223B 2.7 2.25 < 75 < 3 < 3 < -.8 TZQ5224B 2.8 2.25 < 75 < 3 < 4 < -.8 TZQ5225B 3 2.25 < 5 < 29 < 6 < -.75 TZQ5226B 3.3 2.25 < 25 < 28 < 6 < -.7 TZQ5227B 3.6 2.25 < 5 < 24 < 7 < -.65 TZQ5228B 3.9 2.25 < < 23 < 9 < -.6 TZQ5229B 4.3 2.25 < 5 < 22 < 2 < ±.55 TZQ523B 4.7 2.25 < 5 2 < 9 < 9 < ±.3 TZQ523B 5. 2.25 < 5 2 < 7 < 6 < ±.3 TZQ5232B 5.6 2.25 < 5 3 < < 6 < +.38 TZQ5233B 6 2.25 < 5 3.5 < 7 < 6 < +.38 TZQ5234B 6.2 2.25 < 5 4 < 7 < < +.45 TZQ5235B 6.8 2.25 < 3 5 < 5 < 75 < +.5 TZQ5236B 7.5 2.25 < 3 6 < 6 < 5 < +.58 TZQ5237B 8.2 2.25 < 3 6.5 < 8 < 5 < +.62 TZQ5238B 8.7 2.25 < 3 6.5 < 8 < 6 < +.65 TZQ5239B 9. 2.25 < 3 7 < < 6 < +.68 TZQ524B 2.25 < 3 8 < 7 < 6 < +.75 TZQ524B 2.25 < 2 8.4 < 22 < 6 < +.76 TZQ5242B 2 2.25 < 9. < 3 < 6 < +.77 TZQ5243B 3 9.5.25 <.5 9.9 < 3 < 6 < +.79 TZQ5244B 4 9.25 <. < 5 < 6 < +.82 TZQ5245B 5 8.5.25 <. < 6 < 6 < +.82 TZQ5246B 6 7.8.25 <. 2 < 7 < 6 < +.83 TZQ5247B 7 7.4.25 <. 3 < 9 < 6 < +.84 TZQ5248B 8 7.25 <. 4 < 2 < 6 < +.85 TZQ5249B 9 6.6.25 <. 4 < 23 < 6 < +.86 TZQ525B 2 6.2.25 <. 5 < 25 < 6 < +.86 TZQ525B 22 5.6.25 <. 7 < 29 < 6 < +.87 TZQ5252B 24 5.2.25 <. 8 < 33 < 6 < +.88 TZQ5253B 25 5.25 <. 9 < 35 < 6 < +.89 TZQ5254B 27 4.6.25 <. 2 < 4 < 6 < +.9 TZQ5255B 28 4.5.25 <. 2 < 44 < 6 < +.9 TZQ5256B 3 4.2.25 <. 23 < 49 < 6 < +.9 TZQ5257B 33 3.8.25 <. 25 < 58 < 7 < +.92 TZQ5258B 36 3.4.25 <. 27 < 7 < 7 < +.93 TZQ5259B 39 3.2.25 <. 3 < 8 < 8 < +.94 TZQ526B 43 3.25 <. 33 < 93 < 9 < +.95 TZQ526B 47 2.7.25 <. 36 < 5 < < +.95 TZQ5262B 5 2.5.25 <. 39 < 25 < < +.96 TZQ5263B 56 2.2.25 <. 43 < 5 < 3 < +.96 TZQ5264B 6 2..25 <. 46 < 7 < 4 < +.97 TZQ5265B 62 2.25 <. 47 < 85 < 4 < +.97 TZQ5266B 68.8.25 <. 52 < 23 < 6 < +.97 TZQ5267B 75.7.25 <. 56 < 27 < 7 < +.98 Note Based on DC measurement at thermal equilibrium; case temperature maintained at 3 C ± 2 C Rev..9, 22-Feb-8 2 Document Number: 8562 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) P tot - Total Power Dissipation (mw) 6 5 4 3 2 4 8 2 6 2 95 962 T amb - Ambient Temperature ( C) Fig. - Total Power Dissipation vs. Ambient Temperature TK VZ - Temperature Coefficient of V Z ( -4 /K) 95 96 5 5 I Z = 5 ma - 5 2 3 4 5 Fig. 4 - Temperature Coefficient of V Z vs. Z-Voltage 2 V Z - Voltage Change (mv) I Z = 5 ma C D - Diode Capacitance (pf) 5 5 V R = 2 V T j = 25 C 95 9598 5 5 2 25 95 96 5 5 2 25 Fig. 2 - Typical Change of Working Voltage under Operating Conditions at T amb = 25 C Fig. 5 - Diode Capacitance vs. Z-Voltage V Ztn - Relative Voltage Change.3 V Ztn = V Zt /V Z (25 C).2 TK VZ = x -4 /K 8 x -4 /K 6 x -4 /K. 4 x -4 /K 2 x -4 /K. - 2 x -4 /K - 4 x.9-4 /K.8-6 6 2 8 24 95 9599 T j - Junction Temperature ( C) I F - Forward Current (ma) T j = 25 C....2.4.6.8 95965 V F - Forward Voltage (V). Fig. 3 - Typical Change of Working Voltage vs. Junction Temperature Fig. 6 - Forward Current vs. Forward Voltage Rev..9, 22-Feb-8 3 Document Number: 8562 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
I Z - Z-Current (ma) 8 6 4 2 P tot = 5 mw T amb = 25 C 4 6 8 2 2 95 964 r Z - Differential Z-Resistance (Ω) I Z = ma 5 ma ma T j = 25 C 5 5 2 95 966 25 Fig. 7 - Z-Current vs. Z-Voltage Fig. 9 - Differential Z-Resistance vs. Z-Voltage 5 I Z - Z-Current (ma) 4 3 2 P tot = 5 mw T amb = 25 C 95 967 5 2 25 3 35 Fig. 8 - Z-Current vs. Z-Voltage hp - Thermal Resistance for Pulse Cond. (K/W) t p /T =.5 t p /T =.2 Single Pulse R thja = 3 K/W T = T j max. - T amb t p /T =. t p /T =. t p /T =.2 t p /T =.5 i ZM = (- V Z + (V 2 Z + 4r zj x T/Z thp ) /2 )/(2r zj ) - 2 Fig. - Thermal Response Rev..9, 22-Feb-8 4 Document Number: 8562 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-8 Cathode identification.7 (.67) glass.6 (.63).4 (.55).47 (.9) max. > R3 (R.8) glass 3.7 (.46) 3.3 (.3) The gap between plug and glass can be either on cathode or anode side Foot print recommendation:.25 (.49) min. 2.5 (.98) max. 2 (.79) min. 5 (.97) ref. 96 27 Rev..9, 22-Feb-8 5 Document Number: 8562 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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