Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from V source Suitable for switching regulator, DC-DC converter Outline DPAK-2 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source 4. Drain S
Absolute Maximum Ratings (Ta = 2 C) Item Symbol Ratings Unit Drain to source voltage V DSS V Gate to source voltage V GSS ±20 V Drain current I D A Drain peak current I D(pulse) * 1 40 A Body to drain diode reverse drain current I DR A Channel dissipation Pch* 2 20 W Channel temperature Tch C Storage temperature Tstg to + C Notes 1. PW µs, duty cycle 1% 2. Value at T C = 2 C 2
Electrical Characteristics (Ta = 2 C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown V (BR)DSS V I D = ma, V GS voltage Gate to source breakdown voltage V (BR)GSS ±20 V I G = ±0 µa, V DS Gate to source leak current I GSS ± µa V GS = ±16 V, V DS Zero gate voltage drain current I DSS 0 µa V DS = 16 V, V GS Gate to source cutoff voltage V GS(off) 1.0 2. V I D = 1 ma, V DS = Static drain to source on state R DS(on) 0.0 0.08 Ω I D = A, V GS = * 1 resistance 0.09 0.14 Ω I D = A, V GS = 4 V* 1 Forward transfer admittance y fs 6 9 S I D = A, V DS = * 1 Input capacitance Ciss 730 pf V DS =, V GS, f = 1 MHz Output capacitance Coss 680 pf Reverse transfer capacitance Crss 260 pf Turn-on delay time t d(on) 13 ns I D = A, V GS =, R L = 2 Ω Rise time t r 1 ns Turn-off delay time t d(off) 90 ns Fall time t f 1 ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test V DF 1.2 V I F = A, V GS t rr 0 µs I F = A, V GS, di F /dt A/µs 3
20 Power vs. Temperature Derating Channel Dissipation Pch (W) 1 0 30 3 0 1 0 0 200 Case Temperature Tc ( C) Maximum Safe Operation Area Operation in This Area is Limited by R DS(on) µs D.C Operation (Tc = 2 C) 0 µs 1 ms 0.3 PW = ms Ta = 2 C (1shot) 0.1 0.1 0.3 1 3 30 0 Drain to Source Voltage V DS (V) 16 12 8 4 Typical Output Characteristics 6 V 4 V 3. V 3 V V GS = 2. V 0 2 4 6 8 Drain to Source Voltage V (V) DS 4
Typical Tranfer Characteristics 16 12 8 4 V DS = 7 C Tc = 2 C 2 C Drain to Source Voltage V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage I D = A A 2 A 0 2 4 6 8 Gate to Source Voltage V (V) GS 0. 0.2 0.1 0.0 0.02 Static Drain to Source on State Resistance vs. Drain Current 1 V GS = 4 V 0.01 0. 1 2 0
Static Drain to Source on State Resistance R DS(on) ( Ω ) Forward Transfer Admittance y fs (S) Static Drain to Source on State Resistance vs. Temperature 0.20 0.16 0.12 0.08 0.04 V GS = 4 V V GS = I D = A A A 2 A A 2 A 0 40 0 40 80 120 160 Case Temperature Tc ( C) 0 20 2 Forward Transfer Admittance vs. Drain Current Tc = 2 C 2 C 7 C 1 V DS = 0. 0.2 0. 1 2 00 Body Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 200 0 0 20 di / dt = 20 A / µs V GS, 0.1 0.2 0. 1.0 2 Reverse Drain Current I DR (A) 6
000 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pf) 00 0 Ciss Coss Crss Drain to Source Voltage V DS (V) V GS f = 1 MHz 0 4 8 12 16 0 30 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS V DD = V V V DD = V V V GS 40 I D = A 0 0 8 16 24 32 40 Gate Charge Qg (nc) 0 4 8 12 16 Gate to Source Voltage V GS (V) Switching Time t (ns) 00 200 0 0 20 t f t d(off) Switching Characteristics V GS =, V DD = PW = 2 µs, duty < 1 % t r t d(on) 0.1 0.2 0. 1 2 7
Reverse Drain Current I DR (A) 16 12 8 4 Reverse Drain Current vs. Source to Drain Voltage V V GS, V 0 0.4 0.8 1.2 1.6 Source to Drain Voltage V SD (V) 3 Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 1 0.3 0.1 0.03 D = 1 0. 0.2 0.01 0.1 0.0 0.02 1 shot Pulse 0.01 µ 0 µ 1 m m Pulse Width θ ch c(t) = γ s (t) θ ch c θch c = 6.2 C/W, Tc = 2 C PDM PW T Tc = 2 C D = PW T 0 m 1 PW (S) Switching Time Test Circuit Waveforms Vin Monitor D.U.T. R L Vout Monitor Vin % 90% Vin - V 0Ω VDD. =. V 90% 90% Vout % % td(on) tr td(off) t f 8
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