In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). All rights reserved or Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

Rev. 2 3 July 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Q11 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Automotive and general purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j 25 C; T j 175 C - - 1 V I D drain current V GS =1V; T mb =25 C; - - 23 A see Figure 1 and 3 P tot total power dissipation T mb = 25 C; see Figure 2 - - 99 W Avalanche ruggedness E DS(AL)S non-repetitive drain-source avalanche energy Static characteristics R DSon drain-source on-state resistance I D =14A; V sup 1 V; R GS =5Ω; V GS =1V; T j(init) = 25 C; unclamped V GS =1V; I D =13A; T j = 175 C; see Figure 12 and 13 V GS =1V; I D =13A; T j = 25 C; see Figure 12 and 13 - - 1 mj - - 187 mω - 64 75 mω

2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 2 D drain mb 3 S source mb D mounting base; connected to G drain mbb76 D S 3. Ordering information 1 2 3 SOT78A (TO-22AB) Table 3. Type number Ordering information Package Name Description Version TO-22AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78A TO-22AB _2 Product data sheet Rev. 2 3 July 29 2 of 13

4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 6134). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage T j 25 C; T j 175 C - 1 V V DGR drain-gate voltage R GS =2kΩ - 1 V V GS gate-source voltage -2 2 V I D drain current T mb =25 C; V GS =1V; see Figure 1 and 3-23 A T mb =1 C; V GS = 1 V; see Figure 1-16.2 A I DM peak drain current T mb =25 C; t p 1 µs; pulsed; see Figure 3-92 A P tot total power dissipation T mb =25 C; see Figure 2-99 W T stg storage temperature -55 175 C T j junction temperature -55 175 C Source-drain diode I S source current T mb =25 C - 23 A I SM peak source current t p 1 µs; pulsed; T mb =25 C - 92 A Avalanche ruggedness E DS(AL)S non-repetitive drain-source avalanche energy I D =14A; V sup 1 V; R GS =5Ω; V GS =1V; T j(init) = 25 C; unclamped - 1 mj 12 3aa24 12 3na19 I der (%) P der (%) 8 8 4 4 5 1 15 2 T mb ( C) 5 1 15 2 T mb ( C) Fig 1. Normalized continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature _2 Product data sheet Rev. 2 3 July 29 3 of 13

1 3 I D (A) P 3nb34 t p δ = T 1 2 R DSon = V DS /I D t p T t t p = 1 us 1 1 us D.C. 1 ms 1 ms 1 ms 1 1 1 1 2 1 3 V DS (V) Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage _2 Product data sheet Rev. 2 3 July 29 4 of 13

5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-mb) thermal resistance from junction to mounting base see Figure 4 - - 1.5 K/W R th(j-a) thermal resistance from junction to ambient - 6 - K/W 1 3nb35 Z th(j-mb) (K/W) 1 δ =.5.2 1 1.1.5 P t p δ = T.2 t p t 1 2 Single Shot T 1 6 1 5 1 4 1 3 1 2 1 1 1 t p (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration _2 Product data sheet Rev. 2 3 July 29 5 of 13

6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source I D =.25mA; V GS =V; T j =25 C 1 - - V breakdown voltage I D =.25mA; V GS =V; T j =-55 C 89 - - V V GS(th) gate-source threshold voltage I D =1mA; V DS = V GS ; T j = 175 C; see Figure 11 I D =1mA; V DS = V GS ; T j =-55 C; see Figure 11 I D =1mA; V DS = V GS ; T j =25 C; see Figure 11 1 - - V - - 4.4 V 2 3 4 V I DSS drain leakage current V DS =1V; V GS =V; T j = 175 C - - 5 µa V DS =1V; V GS =V; T j = 25 C -.5 1 µa I GSS gate leakage current V DS =V; V GS =2V; T j = 25 C - 2 1 na V DS =V; V GS =-2V; T j = 25 C - 2 1 na R DSon drain-source on-state resistance V GS =1V; I D =13A; T j = 175 C; see Figure 12 and 13 V GS =1V; I D =13A; T j =25 C; see Figure 12 and 13 - - 187 mω - 64 75 mω Dynamic characteristics C iss input capacitance V GS =V; V DS =25V; f=1mhz; - 97 121 pf C oss output capacitance T j =25 C; see Figure 15-127 15 pf C rss reverse transfer - 78 11 pf capacitance t d(on) turn-on delay time V DS =3V; R L =2.2Ω; V GS =1V; - 8 - ns t r rise time R G(ext) =5.6Ω; T j =25 C - 39 - ns t d(off) turn-off delay time - 26 - ns t f fall time - 24 - ns L D internal drain inductance L S internal source inductance Source-drain diode from drain lead 6 mm from package to centre of die; T j =25 C from contact screw on mounting base to centre of die; T j =25 C from source lead to source bond pad; T j =25 C - 4.5 - nh - 3.5 - nh - 7.5 - nh V SD source-drain voltage I S =25A; V GS =V; T j =25 C; -.85 1.2 V see Figure 14 t rr reverse recovery time I S =13A; di S /dt = -1 A/µs; V GS =-1V; - 64 - ns Q r recovered charge V DS =3V; T j =25 C - 12 - nc _2 Product data sheet Rev. 2 3 July 29 6 of 13

I D (A) 6 5 V GS (V) = 8 9 3nb31 1 2 7.5 R DSon (mω) 9 85 8 3nb3 4 6.5 75 3 7 2 5.5 65 6 1 4.5 2 4 6 8 1 V DS (V) 55 5 5 1 15 2 V GS (V) Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values 1 1 3aa35 2 3nb28 I D (A) 1 2 min typ max g fs (S) 15 1 3 1 1 4 1 5 5 1 6 2 4 6 V GS (V) 1 2 3 4 I D (A) Fig 7. Sub-threshold drain current as a function of gate-source voltage Fig 8. Forward transconductance as a function of drain current; typical values _2 Product data sheet Rev. 2 3 July 29 7 of 13

35 I D (A) 3 25 3nb29 V GS (V) 1 9 8 7 V DS = 14 V V DS = 8 V 3nb27 2 6 5 15 4 1 5 T j = 175 C T j = 25 C 3 2 1 2 4 6 8 V GS (V) 1 2 3 Q G (nc) Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 1. Gate-source voltage as a function of turn-on gate charge; typical values 5 3aa32 12 3nb32 V GS(th) (V) 4 max R DSon (mω) V GS (V)= 5.5 6 6.5 7 8 1 1 3 typ 8 2 min 1 6 6 6 12 18 T j ( C) 4 1 2 3 4 5 I D (A) Fig 11. Gate-source threshold voltage as a function of junction temperature Fig 12. Drain-source on-state resistance as a function of drain current; typical values _2 Product data sheet Rev. 2 3 July 29 8 of 13

3 a 3aa29 I S (A) 45 4 35 3nb26 2 3 25 2 1 15 1 5 T j = 175 C T j = 25 C -6 6 12 18 T j ( C)..2.4.6.8 1. 1.2 V SD (V) Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 14. Reverse diode current as a function of reverse diode voltage; typical values 2 C (pf) 18 16 14 12 1 8 6 4 2 C iss C oss C rss 3nb33 1 2 1 1 1 1 1 2 V DS (V) Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values _2 Product data sheet Rev. 2 3 July 29 9 of 13

7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-22AB SOT78A E p A A 1 D 1 q mounting base D L 1 (1) L 2 Q L b 1 1 2 3 b c e e 5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L2 L1 (1) p max. 4.5 1.39.9 1.3.7 15.8 6.4 1.3 15. 3.3 3.8 mm 2.54 3. 4.1 1.27.6 1..4 15.2 5.9 9.7 13.5 2.79 3.6 q 3. 2.7 Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78A REFERENCES IEC JEDEC JEITA 3-lead TO-22AB SC-46 EUROPEAN PROJECTION ISSUE DATE 3-1-22 5-3-14 Fig 16. Package outline SOT78A (TO-22AB) _2 Product data sheet Rev. 2 3 July 29 1 of 13

8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes _2 2973 Product data sheet - BUK7575_7675_1A-1 Modifications: BUK7575_7675_1A-1 (9397 75 7623) The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number separated from data sheet BUK7575_7675_1A-1. 2124 Product specification - - _2 Product data sheet Rev. 2 3 July 29 11 of 13

9. Legal information 9.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS is a trademark of NXP B.V. 1. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com _2 Product data sheet Rev. 2 3 July 29 12 of 13

11. Contents 1 Product profile...........................1 1.1 General description......................1 1.2 Features and benefits.....................1 1.3 Applications............................1 1.4 Quick reference data.....................1 2 Pinning information.......................2 3 Ordering information......................2 4 Limiting values...........................3 5 Thermal characteristics...................5 6 Characteristics...........................6 7 Package outline.........................1 8 Revision history......................... 11 9 Legal information........................12 9.1 Data sheet status.......................12 9.2 Definitions.............................12 9.3 Disclaimers............................12 9.4 Trademarks............................12 1 Contact information......................12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 July 29 Document identifier: _2